UniFET
TM
FDAF69N25
250V N-Channel MOSFET
Features
Description
• 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power
supplies.
• Fast switching
• Improved dv/dt capability
D
{
z
G{
z
z
TO-3PF
G D S
{
S
FQAF Series
Absolute Maximum Ratings
Symbol
Parameter
FDAF69N25
VDSS
Drain-Source Voltage
VDS(Avalanche)
Repetitive Avalanche Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
EAS
Unit
250
V
300
V
34
21.5
A
A
(Note 1)
136
A
±30
V
Single Pulsed Avalanche Energy
(Note 2)
1894
mJ
IAR
Avalanche Current
(Note 1)
34
A
EAR
Repetitive Avalanche Energy
(Note 1)
11.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
4.5
V/ns
115
0.93
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FDAF69N25 Rev. A
1
Min.
Max.
Unit
--
1.08
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FDAF69N25 250V N-Channel MOSFET
September 2005
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDAF69N25
FDAF69N25
TO-3PF
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
250
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.25
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.034
0.041
Ω
--
25
--
S
--
3570
4640
pF
--
750
980
pF
--
84
130
pF
--
95
200
ns
--
855
1720
ns
--
130
270
ns
--
220
450
ns
--
77
100
nC
--
24
--
nC
--
37
--
nC
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 17A
gFS
Forward Transconductance
VDS = 40V, ID = 17A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125V, ID = 69A
RG = 25Ω
(Note 4, 5)
VDS = 200V, ID = 69A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
34
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
136
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 34A
--
--
1.4
V
trr
Reverse Recovery Time
--
210
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 69A
dIF/dt =100A/µs
--
5.7
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.64mH, IAS = 69A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 34A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FDAF69N25 Rev. A
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FDAF69N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
150°C
25°C
1
10
-55°C
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
0
0
10
-1
0
10
10
1
10
2
10
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
IDR, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
0.10
0.08
VGS = 10V
0.06
VGS = 20V
0.04
* Note : TJ = 25°C
10
1
10
150°C
25°C
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
0
10
0
25
50
75
100
125
150
175
200
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
9000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
6000
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Crss = Cgd
Coss
Ciss
3000
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 50V
10
VDS = 125V
VDS = 200V
8
6
4
2
* Note : ID = 69A
0
-1
10
0
10
0
1
0
10
3
FDAF69N25 Rev. A
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDAF69N25 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 17 A
0.5
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
2
10 µs
30
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
Operation in This Area
is Limited by R DS(on)
1
10
10 ms
100 ms
DC
0
※ Notes :
10
20
10
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
0
25
2
10
10
50
75
VDS, Drain-Source Voltage [V]
100
℃
125
150
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
10
PDM
0 .1
-1
t1
0 .0 5
t2
※
0 .0 2
0 .0 1
s in g le p u ls e
10
N o te s :
1 . Z θ J C(t) = 1 .0 8
/W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C(t)
℃
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
FDAF69N25 Rev. A
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FDAF69N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDAF69N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FDAF69N25 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
Time
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FDAF69N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FDAF69N25 Rev. A
www.fairchildsemi.com
FDAF69N25 250V N-Channel MOSFET
Mechanical Dimensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
22.00 ±0.20
23.00 ±0.20
10
°
10.00 ±0.20
(1.50)
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
7
FDAF69N25 Rev. A
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
8
FDAF69N25 Rev. A
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FDAF69N25 250V N-Channel MOSFET
TRADEMARKS
