FDAF69N25

UniFET TM FDAF69N25 250V N-Channel MOSFET Features Description • 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies. • Fast switching • Improved dv/dt capability D { z G{   z z TO-3PF G D S { S FQAF Series Absolute Maximum Ratings Symbol Parameter FDAF69N25 VDSS Drain-Source Voltage VDS(Avalanche) Repetitive Avalanche Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Unit 250 V 300 V 34 21.5 A A (Note 1) 136 A ±30 V Single Pulsed Avalanche Energy (Note 2) 1894 mJ IAR Avalanche Current (Note 1) 34 A EAR Repetitive Avalanche Energy (Note 1) 11.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) 4.5 V/ns 115 0.93 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FDAF69N25 Rev. A 1 Min. Max. Unit -- 1.08 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET September 2005 Device Marking Device Package Reel Size Tape Width Quantity FDAF69N25 FDAF69N25 TO-3PF -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.034 0.041 Ω -- 25 -- S -- 3570 4640 pF -- 750 980 pF -- 84 130 pF -- 95 200 ns -- 855 1720 ns -- 130 270 ns -- 220 450 ns -- 77 100 nC -- 24 -- nC -- 37 -- nC On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 17A gFS Forward Transconductance VDS = 40V, ID = 17A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 69A RG = 25Ω (Note 4, 5) VDS = 200V, ID = 69A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 34A -- -- 1.4 V trr Reverse Recovery Time -- 210 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 69A dIF/dt =100A/µs -- 5.7 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.64mH, IAS = 69A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 34A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 150°C 25°C 1 10 -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test * Notes : 1. 250µs Pulse Test 2. TC = 25°C 0 0 10 -1 0 10 10 1 10 2 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.10 0.08 VGS = 10V 0.06 VGS = 20V 0.04 * Note : TJ = 25°C 10 1 10 150°C 25°C * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0 10 0 25 50 75 100 125 150 175 200 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 9000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 6000 VGS, Gate-Source Voltage [V] Capacitances [pF] Crss = Cgd Coss Ciss 3000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 69A 0 -1 10 0 10 0 1 0 10 3 FDAF69N25 Rev. A 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 17 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 2 10 µs 30 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms Operation in This Area is Limited by R DS(on) 1 10 10 ms 100 ms DC 0 ※ Notes : 10 20 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 0 25 2 10 10 50 75 VDS, Drain-Source Voltage [V] 100 ℃ 125 150 TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 PDM 0 .1 -1 t1 0 .0 5 t2 ※ 0 .0 2 0 .0 1 s in g le p u ls e 10 N o te s : 1 . Z θ J C(t) = 1 .0 8 /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C(t) ℃ -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDAF69N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 5 FDAF69N25 Rev. A VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Mechanical Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 22.00 ±0.20 23.00 ±0.20 10 ° 10.00 ±0.20 (1.50) 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters 7 FDAF69N25 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 8 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET TRADEMARKS