FDB035N10A

DATA SHEET www.onsemi.cn MOSFET – N 沟道, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 100 V 3.5 m @ 10 V 214 A* * (  )。   120 A。 100 V, 214 A, 3.5 mW D FDB035N10A G 说 N MOSFET onsemi POWERTRENCH  ，     。 特 S D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM •RDS(on) = 3.0 m () @ VGS = 10 V, ID = 75 A •  •!"，QG = 89 nC () •#$%&" RDS(on) •'()*+ •, RoHS -. $Y&Z&3&K FDB 035N10A 用 •/ ATX / 012 / 3 PSU 456) •78 •9:(;?2 $Y &Z &3 &K FDB035N10A = Logo = Assembly Plant Code = 3−Digit Date Code Format = 2−Digits Lot Run Traceability Code = Device Code D G S N 沟道 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2011 January, 2022 − Rev. 3 1 Publication Order Number: FDB035N10ACN/D FDB035N10A MOSFET 最额 (TC = 25°C ) FDB035N10A  VDSS － 100 V VGSS － ±20 V -  (TC = 25°C, ) 214* A -  (TC = 100°C, ) 151* -  (TC = 25°C, ) 120 -  ( 1) 856 A 658 mJ 6.0 V/ns (TC = 25°C) 333 W - %& 25°C  2.22 W/°C −55 to +175 °C 300 °C 符 ID  IDM  EAS   ( 2) dv/dt  PD $ TJ, TSTG TL !" dv/dt # ( 3) '()* +,-./01)，3456 1/8"，7 5 8 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (9:;) ?/@A B. *，C。? D! ，EFG#H，IJC，K$ LM。 * (  )。  120 A。 1. N"@A ： P)%/。 2. QR TJ = 25°C, L = 1 mH, IAS = 36.3 A。 3. ISD ≤ 75 A, di/dt ≤ 200 A/s, VDD ≤ BVDSS, QR TJ = 25°C。 热能 符 FDB035N10A  °C/W RJC &56ST/ 0.45 RJA &U&ST (VWX. 2 Y',Z) / 。 62.5 &U&ST (1 in2 40 2 Y',Z) / 。 www.onsemi.cn 2 FDB035N10A 电气特 (TC = 25°C ) 符 测试条 最  最  100 − − V 0.07 − V/°C A 特 BVDSS －([ ID = 250 A, VGS = 0 V, TC = 25°C ([ )\] ID = 250 A, )9 25°C ^  VDS = 80 V, VGS = 0 V − − 1 VDS = 80 V, TC = 150°C − − 500  - ) VGS = ±20 V, VDS = 0 V − − ±100 VGS(th) _  VGS = VDS, ID = 250 A 2.0 − 4.0 V RDS(on) &`aIbT VGS = 10 V, ID = 75 A − 3.0 3.5 m c+dI VDS = 10 V, ID = 75 A − 167 − S Ciss e,f VDS = 25 V, VGS = 0 V, f = 1 MHz − 5485 7295 pF Coss ef − 2430 3230 pF Crss /+0ef − 210 − pF − 89 116 nC − 24 − nC BVDSS / TJ IDSS IGSS nA 通特 gFS 特 Qg(tot) 10 V .gh VDS = 80 V, ID = 75 A, VGS = 10 V ( 4) Qgs  - g Qgs2 i5g_ − 8 − nC Qgd  -  “ j6 ” g − 25 − nC − 22 54 ns − 54 118 ns 特 td(on) VDD = 50 V, ID = 75 A, VGS = 10 V, RG = 4.7  ( 4) Ibklmn tr Qb7mn td(off) 8oklmn − 37 84 ns tf 8o9%mn − 11 32 ns − 1.2 −  − − 214* A ESR pq:rT (G-S) f = 1 MHz 漏极 - 源极极管特 IS  -  /c+ ISM  -  /c+  VSD  -  c+ trr /+!"mn Qrr /+!"g − − 856 A VGS = 0 V, ISD = 75 A − − 1.25 V VGS = 0 V, ISD = 75 A, VDD = 80 V, dIF/dt = 100 A/s − 72 − ns − 129 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. (9:;) ，“stM”Bu.vwxyz9.;