FDB075N15A-F085

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Other names and brands may be claimed as the property of others. FDB075N15A-F085 N-Channel Power Trench® MOSFET FDB075N15A-F085 N-Channel Power Trench® MOSFET D D 150V, 110A, 7.5mΩ Features G „ Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability TO-263 FDB SERIES „ RoHS Compliant S S „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 150 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 502 A mJ Power Dissipation 333 W Derate above 25oC 2.22 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.45 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDB075N15A Device FDB075N15A-F085 Package D2-PAK(TO-263) Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.24mH, IAS = 64A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FDB075N15A-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 150V, VGS = 0V 150 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 3.0 4.0 V - 5.5 7.5 mΩ - 14.2 20 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 75V, VGS = 0V, f = 1MHz VDD = 75V ID = 80A - 5595 - pF - 513 - pF - 16 - pF - 2.4 - Ω - 80 95 nC - 11 13 nC - 26.5 - nC 14 - nC Switching Characteristics ton Turn-On Time - - 100 ns td(on) Turn-On Delay Time - 33 - ns tr Rise Time - 46 - ns td(off) Turn-Off Delay Time - 76 - ns tf Fall Time - 25 - ns toff Turn-Off Time - - 138 ns V VDD = 75V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=120V - 118 132 ns - 341 494 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDB075N15A-F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V 150 CURRENT LIMITED BY SILICON 100 50 0 175 Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V 1000 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 175 - TC I = I2 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDB075N15A-F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 100 100us 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100ms 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 100 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 300 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 VDD = 5V 150 TJ = 175oC 100 TJ = 25oC TJ = -55oC 50 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.01 0.0 7 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 250 250 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 5V 50 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 5 200 150 5V 100 50 0 VGS 15V Top 10V5.5V 8V 7V 6V 5.5V 5V Bottom 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDB075N15A-F085 N-Channel Power Trench® MOSFET Typical Characteristics ID = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 175oC TJ = 25oC 20 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 80 2.4 2.0 1.6 1.2 ID = 80A VGS = 10V 0.8 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.5 1.1 0.9 1.0 0.6 0.9 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss 1000 Coss 10 f = 1MHz VGS = 0V 1 0.1 Crss 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 100 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature CAPACITANCE (pF) 2.8 10 ID = 80A VDD = 60V 8 VDD = 75V 6 VDD = 90V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FDB075N15A-F085 N-Channel Power Trench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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