FDB075N15A

FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 m Features Description • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • RoHS Compliant • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D GD S G TO-220 G S D2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS FDP075N15A_F102 FDB075N15A 150 Parameter Drain to Source Voltage Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - DC V ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed (Note 1) 522 A (Note 2) 588 mJ 6.0 V/ns (Note 3) TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds A 92 (TC = 25oC) Power Dissipation V ±30 130* - Continuous (TC = 100oC) PD TL Unit - Derate Above 25oC 333 W 2.22 W/oC -55 to +175 oC 300 oC * Package limitation current is 120 A. Thermal Characteristics Symbol RJC RJA FDP075N15A_F102 FDB075N15A 0.45 Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient, D2-PAK (1 in Pad of 2-oz Copper), Max. ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 1 62.5 Unit o C/W 40 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET March 2015 Part Number FDP075N15A_F102 Top Mark FDP075N15A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDB075N15A FDB075N15A D2-PAK Tape and Reel 330 mm 24 mm 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.1 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A 2.0 - 4.0 V Static Drain to Source On Resistance - 6.25 7.5 m gFS Forward Transconductance VGS = 10 V, ID = 100 A VDS = 10 V, ID = 100 A - 164 - S - 5525 7350 pF - 516 685 pF - 21 - pF - 909 - pF - 77 100 nC - 26 - nC - 11 - nC - 16 - nC - 2.29 -  - 28 66 ns - 37 84 ns - 62 134 ns - 21 52 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 0 V VDS = 75 V, ID = 100 A, VGS = 10 V  (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 100 A, VGS = 10 V, RG = 4.7  (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 130* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 520 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 100 A - - 1.25 V trr Reverse Recovery Time - 97 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 75 V, ISD = 100 A, dIF/dt = 100 A/s - 264 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting TJ = 25C, L = 3 mH, IAS = 19.8 A. 3. ISD 100 A, di/dt  200 A/s, VDD  BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 2 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 o 175 C o 25 C o 7 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 VGS, Gate-Source Voltage[V] 400 IS, Reverse Drain Current [A] 8 VGS = 10V VGS = 20V 6 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 1000 10 0.1 1.5 10 Ciss 100 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 4 o -55 C 10 *Notes: 1. 250s Pulse Test 10 RDS(ON) [m], Drain-Source On-Resistance *Notes: 1. VDS = 10V 2. 250s Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 400 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 Crss 6 4 2 0 100 200 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 100A 0 30 60 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 100A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 140 100 1ms 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS = 10V 120 100s Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: 0.1 o 60 40 o 20 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 Figure 11. Eoss vs. Drain to Source Voltage RJC = 0.45 C/W 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 7 50 IAS, Avalanche Current [A] 6 5 EOSS, [J] Limited by package 80 1. TC = 25 C o 0.01 0.1 100 4 3 2 If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*Rated BVDSS-VDD)+1] o Starting TJ = 25 C 10 o Starting TJ = 150 C 1 0 0 25 50 75 100 125 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 1 0.01 150 4 0.1 1 10 100 tAV, Time In Avalanche [ms] 500 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve  JC o ZJC (t), Thermal Response Thermal Response [Z [ ]C/W] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 o Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 t2 *Notes: 1. ZJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 Rectangular t1, RectangularPulse PulseDuration Duration [sec] [sec] 5 -1 10 1 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 6 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 7 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 8 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 19. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 9 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I73 ©2011 Fairchild Semiconductor Corporation FDP075N15A / FDB075N15A Rev. C5 10 www.fairchildsemi.com FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.