FDB110N15A

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB110N15A N 沟道 PowerTrench® MOSFET 150 V， 92 A， 11 mΩ 特性 说明 • RDS(on) = 9.25 mΩ （典型值） @VGS = 10 V， ID = 92 A 此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench® 工 艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓 越开关性能而定制的。 • 快速开关速度 • 低栅极电荷 应用 • 高性能沟道技术可实现极低的 RDS(on) • 用于 ATX/ 服务器 / 电信 PSU 的同步整流 • 高功率和高电流处理能力 • 电池保护电路 • 符合 RoHS 标准 • 电机驱动和不间断电源 • 微型太阳能逆变器 D D G S G D2-PAK S MOSFET 最大额定值 TC = 25°C 除非另有说明。 符号 FDB110N15A 150 参数 VDSS 漏极－源极电压 VGSS 栅极－源极电压 ID 漏极电流 - 连续 (TC = 25°C) 92 - 连续 (TC = 100°C) 65 - 脉冲 IDM 漏极电流 EAS 单脉冲雪崩能量 dv/dt 二极管恢复 dv/dt 峰值 - DC ±20 - AC (f > 1 Hz) V A （说明 1） 369 A （说明 2） 365 mJ 6 V/ns （说明 3） (TC = 25°C) 234 W - 降低至 25°C 以上 1.56 W/°C PD 功耗 TJ， TSTG 工作和存储温度范围 用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒 TL ±30 单位 V -55 至 +175 °C 300 °C FDB110N15A 单位 热性能 符号 参数 RθJC 结至外壳热阻最大值 0.64 RθJA 结至环境热阻最大值 62.5 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 1 °C/W www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET 2015 年 5 月 器件编号 FDB110N15A 顶标 FDB110N15A 封装 D2-PAK 包装方法 卷带 卷尺寸 330 mm 带宽 24 mm 数量 800 个 电气特性 TC = 25°C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 单位 150 - - V - 0.09 - V/°C 关断特性 BVDSS ΔBVDSS / ΔTJ 漏极－源极击穿电压 击穿电压温度系数 IDSS 零栅极电压漏极电流 IGSS ID = 250 μA， VGS = 0 V ID = 250 μA，推荐选用 25°C VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 150°C - - 500 栅极 - 体漏电流 VGS = ±20 V, VDS = 0 V - - ±100 VGS(th) RDS(on) 栅极阈值电压 VGS = VDS, ID = 250 μA 2.0 - 4.0 V 漏极至源极静态导通电阻 - 9.25 11.0 mΩ gFS 正向跨导 VGS = 10 V, ID = 92 A VDS = 10 V, ID = 92 A - 118 - S μA nA 导通特性 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Coss(er) 能量相关输出电容 Qg(tot) 10 V 的栅极电荷总量 Qgs 栅极 - 源极栅极电荷 Qgs2 栅极平台电荷阈值 Qgd 栅极 - 漏极 “ 米勒 ” 电荷 VDS = 75 V, VGS = 0 V, f = 1 MHz - 3390 4510 pF - 334 445 pF - 14 - pF VDS = 75 V, ID = 92 A - 583 - pF - 47 61 nC VGS = 10 V, VDS = 75 V, ID = 92 A （说明 4） - 16 - nC - 7.9 - nC - 9.7 - nC - 25 60 ns - 26 62 ns - 46 102 ns 开关特性 td(on) tr 导通延迟时间 开通上升时间 td(off) 关断延迟时间 tf 关断下降时间 ESR 等效串联电阻 (G-S) VDD = 75 V, ID = 92 A, VGS = 10 V, RG = 4.7 Ω （说明 4） f = 1 MHz - 14 38 ns - 2.5 - Ω 漏极 - 源极二极管特性 IS 漏极 - 源极二极管最大正向连续电流 - - 92 A ISM 漏极 - 源极二极管最大正向脉冲电流 - - 369 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, ISD = 92 A - - 1.25 V trr 反向恢复时间 - 89 - ns Qrr 反向恢复电荷 VGS = 0 V, ISD = 92 A, VDD = 75 V, dIF/dt = 100 A/μs - 255 - nC 注意： 1. 重复额定值：脉冲宽度受限于最高结温。 2. L = 3 mH， IAS = 15.6 A， RG = 25 Ω，开始 TJ = 25°C。 3. ISD ≤ 92 A， di/dt ≤ 200 A/ms， VDD ≤ BVDSS，开始 TJ = 25°C。 4. 本质上独立于工作温度的典型特性。 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 2 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 500 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o 175 C o 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 5 0.1 1 VDS, Drain-Source Voltage[V] 1 10 2 图 3. 导通电阻变化与漏极电流和栅极电压 IS, Reverse Drain Current [A] 500 20 16 VGS = 10V VGS = 20V 12 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 8 7 图 4. 体二极管正向电压变化与源极电 流和温度 24 RDS(ON) [mΩ], Drain-Source On-Resistance 3 4 5 6 VGS, Gate-Source Voltage[V] *Note: TC = 25 C 0 50 100 150 200 250 ID, Drain Current [A] 300 1 0.0 350 图 5. 电容特性 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 图 6. 栅极电荷 10000 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss 100 10 0.1 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 1 10 VDS, Drain-Source Voltage [V] Crss 6 4 2 0 100 200 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 92A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET 典型性能特征 图 7. 击穿电压变化与温度 图 8. 导通电阻变化与温度 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 图 9. 最大安全工作区 *Notes: 1. VGS = 10V 2. ID = 92A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 图 10. 最大漏极电流与外壳温度 1000 100 100 80 100μs 10 ID, Drain Current [A] ID, Drain Current [A] VGS = 10V 10μs 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: 40 20 o 0.1 60 1. TC = 25 C o o 0.01 0.1 RθJC = 0.64 C/W 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 150 o TC, Case Temperature [ C] 175 图 11. 输出电容 (Eoss) 与漏极 - 源极电压 4 EOSS, [μJ] 3 2 1 0 0 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 25 50 75 100 125 VDS, Drain to Source Voltage [V] 150 4 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET 典型性能特征 （接上页） FDB110N15A — N 沟道 PowerTrench® MOSFET 典型性能特征 （接上页） 图 12. 瞬态热响应曲线 ZθJC(t)，热响应 [oC/W] Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.01 t2 *Notes: Single pulse o 0.001 -5 10 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 PDM 0.05 0.02 1. ZθJC(t) = 0.64 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Pulse[Duration [sec] tRectangular 秒] 1，矩形脉冲持续时间 5 -1 10 1 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET IG = 常量 图 13. 栅极电荷测试电路与波形 VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off 图 14. 阻性开关测试电路与波形 VGS 图 15. 非箝位电感开关测试电路与波形 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 6 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 16. 二极管恢复 dv/dt 峰值测试电路与波形 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 7 www.fairchildsemi.com FDB110N15A — N 沟道 PowerTrench® MOSFET 机械尺寸 图 17. TO263 (D2PAK) 模塑 2 引线表面贴装 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞 兆半导体的全部产品。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2011 飞兆半导体公司 FDB110N15A Rev. 1.4 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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