FDB15N50

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low gate charge Qg results in simple drive requirement (Typ. 33 nC) • Improved Gate, avalanche and high reapplied dv/dt ruggedness • Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A) • Reduced Miller capacitance and low Input capacitance (Typ. Crss = 16 pF) • Improved switching speed with low EMI • 175oC rated junction temperature Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D G G D2-PAK S S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGS ID PD TJ, TSTG FDB15N50 500 Unit V Gate to Source Voltage ±30 V Drain Current Continuous (TC = 25oC, VGS = 10V) 15 A Parameter Drain to Source Voltage o Continuous (TC = 100 C, VGS = 10V) (Note 1) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds 11 A 60 A 300 2 W W/oC -55 to 175 o C 300 (1.6mm from case) o C Thermal Characteristics Symbol FDB15N50 Parameter RθJC Thermal Resistance Junction to Case, Max. RθJA Thermal Resistance Junction to Ambient, Max. ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 0.50 1 62 Unit o C/W oC/W www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET November 2013 Device Marking FDB15N50 Device FDB15N50 Package D2-PAK Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max 500 - - V - 0.58 - V/°C Unit Statics BVDSS Drain to Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, VGS = 0V Reference to 25oC, ID = 1mA RDS(ON) Drain to Source On-Resistance VGS = 10V, ID = 7.5A VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA - 0.33 0.38 Ω 2.0 3.4 4.0 V VDS = 500V TC = 25oC - - 25 VGS = 0V TC = 150oC - - 250 VGS = ±30V - - ±100 Forward Transconductance VDD = 10V, ID = 7.5A 10 - - S Total Gate Charge at 10V VGS = 10V, VDS = 400V, ID = 15A - 33 41 nC - 7.2 10 nC - 12 16 nC IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current µA nA Dynamics gfs Qg(TOT) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge td(ON) tr td(OFF) tf Turn-On Delay Time VDD = 250V, ID = 15A, RG = 6.2Ω, RD = 17Ω Rise Time Turn-Off Delay Time Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 9 - 5.4 - ns ns - 26 - ns - 5 - ns - 1850 - pF - 230 - pF - 16 - pF 760 - - mJ - - 15 A - - 15 A - - 60 A Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current (Note 2) Drain-Source Diode Characteristics IS ISM VSD trr QRR Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Source to Drain Diode Voltage (Note 1) MOSFET symbol showing the integral reverse p-n junction diode. D G S ISD = 15A - 0.86 1.2 V Reverse Recovery Time ISD = 15A, diSD/dt = 100A/µs - 470 730 ns Reverse Recovered Charge ISD = 15A, diSD/dt = 100A/µs - 5 6.6 µC Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature. 2: Starting TJ = 25°C, L = 7.0mH, IAS = 15A. ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 2 www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information 100 TJ = 25oC VGS DESCENDING ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) 100 10V 6.5V 6V 5.5V 5V 4.5V 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1 1 10 10 TJ = 175oC VGS DESCENDING 10V 6V 5.5V 5V 4.5V 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1 1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 3.5 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 50 VDD = 100V NORMALIZED ON RESISTANCE ID , DRAIN CURRENT (A) PULSE DURATION = 80µs 40 30 TJ = 175oC TJ = 25oC 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 3.0 DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 VGS = 10V, ID = 7.5A 0.5 0 -50 6.5 -25 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 3. Transfer Characteristics 4000 0 o VGS , GATE TO SOURCE VOLTAGE (V) Figure 4. Normalized Drain To Source On Resistance vs Junction Temperature 15 CISS VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 COSS 100 CRSS VGS = 0V, f = 1MHz 10 1 10 100 ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 12 100V 250V 9 400V 6 3 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage ID = 15A Figure 6. Gate Charge Waveforms For Constant Gate Current 3 www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET Typical Characteristics 100 TC = 25oC 25 100µs ID, DRAIN CURRENT (A) ISD , SOURCE TO DRAIN CURRENT (A) 30 20 15 TJ = 175oC TJ = 25oC 10 5 10 1ms 10ms 1.0 OPERATION IN THIS AREA 0 0.3 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 VSD , SOURCE TO DRAIN VOLTAGE (V) 1000 Figure 8. Maximum Safe Operating Area 16 IAS, AVALANCHE CURRENT (A) 50 12 8 4 0 25 50 75 100 125 150 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 STARTING TJ = 25oC STARTING TJ = 150oC 1 0.01 175 o TC, CASE TEMPERATURE ( C) 0.1 1 10 50 tAV, TIME IN AVALANCHE (ms) Figure 9. Maximum Drain Current vs Case Temperature ZθJC(t), Thermal Response [oC/W] 100 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current ID, DRAIN CURRENT (A) DC LIMITED BY RDS(ON) Figure 10. Unclamped Inductive Switching Capability 100 10-1 0.50 0.20 t1 0.10 PD 0.05 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 10-2 -5 10 SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Transient Thermal Impedance, Junction to Case ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 4 www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET Typical Characteristics VDS BVDSS tP VDS L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDD - VGS DUT tP IAS 0V 0 0.01Ω tAV Figure 12. Unclamped Energy Test Circuit Figure 13. Unclamped Energy Waveforms VDS VDD Qg(TOT) RL VGS = 10V VDS VGS + VDD VGS - VGS = 1V DUT 0 Ig(REF) Qg(TH) Qgs Qgd Ig(REF) 0 Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 Figure 16. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 10% 50% 50% PULSE WIDTH Figure 17. Switching Time Waveform 5 www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET Test Circuits and Waveforms FDB15N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 18. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FDB15N50 Rev. C1 7 www.fairchildsemi.com FDB15N50 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® ® STEALTH™ MillerDrive™ Fairchild Semiconductor UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ ® SuperSOT™-3 mWSaver FACT UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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