FDC642P-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P www.onsemi.com Features • Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant TSOT23 6−Lead CASE 419BL MARKING DIAGRAM Applications &E&Y &.642&G • Load Switch • Battery Protection • Power management 1 XXX &E &Y &. G = Specific Device Code = Space Designator = Year of Production = Pin One Identifier = Pb−Free Package PINOUT S 4 3 G D 5 2 D D 6 1 D SuperSOTTM−6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 September, 2020 − Rev. 3 1 Publication Order Number: FDC642P−F085/D FDC642P−F085, FDC642P−F085P MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units VDSS Drain to Source Voltage −20 V VGS Gate to Source Voltage ±8 V Drain Current − Continuous (VGS = 4.5 V) − Pulsed −4 −20 EAS Single Pulse Avalanche Energy (Note 1) 72 mJ PD Power Dissipation 1.2 W −55 to +150 °C ID TJ, TSTG Operating and Storage Temperature A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting TJ = 25°C, L = 14.1 mH, IAS = −3.2 A THERMAL CHARACTERISTICS Symbol Parameter Ratings Units °C/W RθJC Thermal Resistance, Junction to Case 30 RθJA Thermal Resistance, Junction to Ambient, 1in2 Copper pad Area 103 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDC642P FDC642P−F085 SSOT−6 7” 8 mm 3000 Units FDC642P FDC642P−F085P SSOT−6 7” 8 mm 3000 Units www.onsemi.com 2 FDC642P−F085, FDC642P−F085P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V −20 − − V Zero Gate Voltage Drain Current VDS = −16 V, VGS = 0 V − − −1 μA VDS = −16 V, VGS = 0 V, TA = 150°C − − −250 VGS = ±8 V − − ±100 −0.4 −0.7 −1.5 V mW Gate to Source Leakage Current nA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −4 A − 52.5 65 VGS = −2.5 V, ID = −3.2 A − 75.3 100 VGS = 4.5 V, ID = −4 A, TJ = 125 °C − 72.7 105 VDD = −5 V, ID = −4 A − 10 − S VGS = 0 V, VDS = −10 V f = 1 MHz − 630 − pF − 160 − pF − 65 − pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate Resistance f = 1 MHz − 4.4 − W Qg(TOT) Total Gate Charge at −4.5 V VGS = 0 V to −4.5 V, VDD = −10 V, ID = −4 A − 6.9 9.0 nC Qgs Gate to Source Gate Charge − 1.2 − nC Qgd Gate to Drain “Miller” Charge VDD = −10 V ID = −4 A − 1.8 − nC VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGS = 6 W − − 23 ns − 7.3 − ns Rise Time − 5.5 − ns Turn−Off Delay Time − 23.2 − ns Fall Time − 9.6 − ns Turn−Off Time − − 53 ns ISD = −1.3 A − − −1.25 V ISD = −0.65 A − − −1.0 ISD = −1.3 A, dISD/dt = 100 A/ms − 17 22 ns − 5.6 7.3 nC Rg SWITCHING CHARACTERISTICS ton td(on) tr td(off) tf toff Turn−On Time Turn−On Delay Time DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDC642P−F085, FDC642P−F085P POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 TA, Case Temperature (°C) Figure 1. Normalized Power Dissipation vs. Ambient Temperature Figure 2. Maximum Continuous Drain Current vs. Ambient Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability www.onsemi.com 4 FDC642P−F085, FDC642P−F085P TYPICAL CHARACTERISTICS continued) Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On−Resistance Variation vs. Gate to Source Voltage Figure 10. Normalized Drain to Source On−Resistance vs. Junction Temperature www.onsemi.com 5 FDC642P−F085, FDC642P−F085P TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted (continued) Figure 11. Normalized Gate Threshold Voltage vs. Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 13. Capacitance vs. Drain to Source Voltage Figure 14. Gate Charge vs. Gate to Source Voltage POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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