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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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FDG313N
FDG313N
Features
Digital FET, N-Channel
•
General Description
RDS(on) = 0.60 Ω @ VGS = 2.7 V.
This N-Channel enhancement mode field effect
transistor is produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially
for low voltage applications as a replacement for
bipolar digital transistor and small signal MOSFET.
Applications
• Load switch
• Battery protection
• Power management
D
0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V
•
Low gate charge (1.64 nC typical)
•
Very low level gate drive requirements allowing direct
operation in 3V circuits (VGS(th) < 1.5V).
•
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
•
Compact industry standard SC70-6 surface mount
package.
S
1
6
2
5
3
4
D
pin 1
SC70-6
D
D
G
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
FDG313N
Units
VDSS
Drain-Source Voltage
25
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
(Note 1a)
±8
0.95
2
PD
Power Dissipation for Single Operation
(Note 1a)
0.75
W
(Note 1b)
0.55
- Continuous
- Pulsed
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
A
0.48
6
°C
kV
260
°C/W
-55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
Package Outlines and Ordering Information
Device Marking
.13
Device
Reel Size
Tape Width
Quantity
FDG313N
7’’
8mm
3000 units
1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDG313N/D
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 20 V, VGS = 0 V
1
IGSS
Gate-Body Leakage Current
VGS = 8 V, VDS = 0 V
100
On Characteristics
25
V
mV/°C
30
µA
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C
-2
0.35
0.53
0.45
ID(on)
On-State Drain Current
VGS = 4.5 V, ID = 0.5 A
VGS = 4.5 V, ID = 0.5 A @ 125°C
VGS = 2.7 V, ID = 0.2 A
VGS = 4.5 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 0.5 A
1.5
S
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
50
pF
28
pF
9
pF
0.65
0.8
1.5
V
mV/°C
0.45
0.76
0.6
0.5
Ω
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 Ω
3
6
ns
8.5
18
ns
Turn-Off Delay Time
17
30
ns
Turn-Off Fall Time
13
25
ns
1.64
2.3
nC
VDS = 5 V, ID = 0.95 A,
VGS = 4.5 V
0.38
nC
0.45
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.6 A
(Note 2)
0.8
0.6
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) 170°C/W when
mounted on a 1 in2
pad of 2oz copper.
b) 225°C/W when
mounted on a half
of package sized 2oz.
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
c) 260°C/W when
mounted on a minimum
pad of 2oz copper.
FDG313N
DMOS Electrical Characteristics
FDG313N
Typical Characteristics
2.5
3.0V
2.5V
R DS(ON) , NORMALIZED
VGS = 4.5V
1.5
2.0V
1
0.5
1.5V
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
2
2
1.5
0
1
2
3
2.5V
3.0V
3.5V
1
0.5
0
VGS = 2.0V
0
0.5
4
R D S(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
1.2
1
0.8
I D = 0.5A
1.2
0.8
TA = 1 25°C
0.4
TA= 25°C
0
0
25
50
75
100
125
150
1
2
3
4
5
V GS , GATE TO SOUR CE VOLT AGE (V)
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
1
1
T = -55°C
J
0.8
25°C
I S , REVERSE DRAIN CURRENT (A)
V DS = 5.0V
I D , DRAIN CURRENT (A)
2
1.6
I D = 0.95 A
VGS = 4.5 V
-25
1.5
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.6
-50
4.5V
I D , DRAIN CURRENT (A)
V DS , DRAIN-SOURCE VOLTAGE (V)
1.6
1
4.0V
125°C
0.6
0.4
0.2
V GS = 0V
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0
0.5
1
1.5
2
2.5
0
Figure 5. Transfer Characteristics.
0.2
0.4
0.6
0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
1.2
(continued)
5
150
VDS = 5V
I D = 0.95A
100
10V
4
CAPACITANCE (pF)
V GS , GATE-SOURCE VOLTAGE (V)
FDG313N
Typical Characteristics
15V
3
2
1
Ciss
50
Coss
20
f = 1 MHz
V GS = 0V
10
0
0
0.4
0.8
1.2
1.6
C rss
5
0.1
2
0.5
Q g , GATE CHARGE (nC)
V
Figure 7. Gate-Charge Characteristics.
DS
1
2
5
10
25
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
5
SINGLE PULSE
1m
s
)
ON
S(
RD
IT
LIM
10m
100
0.3
0.1
0.03
0.01
0.1
o
o
TA= 25 C
s
ms
1s
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA =260°C/W
TA = 25°C
RθJA= 260 C/W
24
POWER (W)
1
18
12
6
0
0.2
0.5
1
2
5
10
20 30
50
0.0001
0.001
V DS , DRAIN-SOURCE VOLTAGE (V)
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
I D , DRAIN CURRENT (A)
2
0.5
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA =260°C/W
0.2
0.1
0.05
0.1
P(pk)
0.05
0.01
t1
0.02
Single Pulse
0.01
0.005
0.0001
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
0.001
0.01
0.1
1
10
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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100
300
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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