FDG313N_D87Z

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG313N FDG313N Features Digital FET, N-Channel • General Description RDS(on) = 0.60 Ω @ VGS = 2.7 V. This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. Applications • Load switch • Battery protection • Power management D 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V • Low gate charge (1.64 nC typical) • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). • Compact industry standard SC70-6 surface mount package. S 1 6 2 5 3 4 D pin 1 SC70-6 D D G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter FDG313N Units VDSS Drain-Source Voltage 25 V VGSS Gate-Source Voltage V ID Drain Current (Note 1a) ±8 0.95 2 PD Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.55 - Continuous - Pulsed (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) A 0.48 6 °C kV 260 °C/W -55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) Package Outlines and Ordering Information Device Marking .13 Device Reel Size Tape Width Quantity FDG313N 7’’ 8mm 3000 units 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDG313N/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 20 V, VGS = 0 V 1 IGSS Gate-Body Leakage Current VGS = 8 V, VDS = 0 V 100 On Characteristics 25 V mV/°C 30 µA nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C -2 0.35 0.53 0.45 ID(on) On-State Drain Current VGS = 4.5 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A @ 125°C VGS = 2.7 V, ID = 0.2 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 0.5 A 1.5 S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 50 pF 28 pF 9 pF 0.65 0.8 1.5 V mV/°C 0.45 0.76 0.6 0.5 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3 6 ns 8.5 18 ns Turn-Off Delay Time 17 30 ns Turn-Off Fall Time 13 25 ns 1.64 2.3 nC VDS = 5 V, ID = 0.95 A, VGS = 4.5 V 0.38 nC 0.45 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.6 A (Note 2) 0.8 0.6 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 170°C/W when mounted on a 1 in2 pad of 2oz copper. b) 225°C/W when mounted on a half of package sized 2oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 260°C/W when mounted on a minimum pad of 2oz copper. FDG313N DMOS Electrical Characteristics FDG313N Typical Characteristics 2.5 3.0V 2.5V R DS(ON) , NORMALIZED VGS = 4.5V 1.5 2.0V 1 0.5 1.5V DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 2 2 1.5 0 1 2 3 2.5V 3.0V 3.5V 1 0.5 0 VGS = 2.0V 0 0.5 4 R D S(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.2 1 0.8 I D = 0.5A 1.2 0.8 TA = 1 25°C 0.4 TA= 25°C 0 0 25 50 75 100 125 150 1 2 3 4 5 V GS , GATE TO SOUR CE VOLT AGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 1 T = -55°C J 0.8 25°C I S , REVERSE DRAIN CURRENT (A) V DS = 5.0V I D , DRAIN CURRENT (A) 2 1.6 I D = 0.95 A VGS = 4.5 V -25 1.5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0.6 -50 4.5V I D , DRAIN CURRENT (A) V DS , DRAIN-SOURCE VOLTAGE (V) 1.6 1 4.0V 125°C 0.6 0.4 0.2 V GS = 0V TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 0 0.5 1 1.5 2 2.5 0 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 5 150 VDS = 5V I D = 0.95A 100 10V 4 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) FDG313N Typical Characteristics 15V 3 2 1 Ciss 50 Coss 20 f = 1 MHz V GS = 0V 10 0 0 0.4 0.8 1.2 1.6 C rss 5 0.1 2 0.5 Q g , GATE CHARGE (nC) V Figure 7. Gate-Charge Characteristics. DS 1 2 5 10 25 , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 30 5 SINGLE PULSE 1m s ) ON S( RD IT LIM 10m 100 0.3 0.1 0.03 0.01 0.1 o o TA= 25 C s ms 1s 10s DC VGS = 4.5V SINGLE PULSE RθJA =260°C/W TA = 25°C RθJA= 260 C/W 24 POWER (W) 1 18 12 6 0 0.2 0.5 1 2 5 10 20 30 50 0.0001 0.001 V DS , DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE I D , DRAIN CURRENT (A) 2 0.5 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =260°C/W 0.2 0.1 0.05 0.1 P(pk) 0.05 0.01 t1 0.02 Single Pulse 0.01 0.005 0.0001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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