FDG6323L-F169

FDG6323L Integrated Load Switch Features VDROP=0.2V @ VIN=5V, IL=0.36A. R(ON) = 0.55Ω VDROP=0.2V @ VIN=2.5V, IL=0.27A. R(ON) = 0.75Ω. General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). High density cell design for extremely low on-resistance. Compact industry standard SC70-6 surface mount package. SuperSOTTM-6 SOT-23 SC70-6 Very small package outline SC70-6. V IN , R1 4 VON/OFF 5 .23 SuperSOTTM-8 3 VOUT , C1 2 VOUT , C1 1 R2 SO-8 SOT-223 EQUIVALENT APPLICATION Q2 + IN VDROP - OUT Q1 pin 1 R1 , C1 6 SC70-6 See Application Circuit Absolute Maximum Ratings Symbol Parameter VIN VON/OFF IL Load Current ON/OFF TA = 25°C unless otherwise noted FDG6323L Units Input Voltage Range 2.5 - 8 V On/Off Voltage Range 1.5 - 8 V 0.6 A - Continuous (Note 1) - Pulsed (Note 1 & 3) PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) (Note 2) 1.8 0.3 W -55 to 150 °C 6 kV 415 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 (Note 2) Publication Order Number: FDG6323L/D Electrical Characteristics (T Symbol A = 25°C unless otherwise noted) Parameter Conditions Min Typ Max Units 1 µA 0.2 V OFF CHARACTERISTICS IFL Forward Leakage Current VIN = 8 V, VON/OFF = 0 V ON CHARACTERISTICS (Note 3) VDROP Conduction Voltage Drop R(ON) Q2 - Static On-Resistance IL VIN = 5 V, VON/OFF = 3.3 V, IL = 0.36 A Load Current 0.14 VIN = 2.5 V, VON/OFF = 3.3 V, IL = 0.27 A 0.15 0.2 VGS = -5 V, ID = -0.6 A 0.41 0.55 VGS = -2.5 V, ID = -0.5 A 0.58 0.75 VDROP = 0.2 V, VIN = 5 V, VON/OFF = 3.3 V 0.36 VDROP = 0.2 V, VIN = 2.5 V, VON/OFF = 3.3 V 0.27 Notes: 1. Range of Vin can be up to 8V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -8V. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG6323L Load Switch Application APPLICATION CIRCUIT Q2 IN OUT R1 C1 Q1 Co LOAD ON/OFF R2 External Component Recommendation R1 is required to turn Q2 off. R2 is optional for Slew Rate Control. For Co ≤ 1uF applications: First select R2,100 - 1KΩ, for Slew Rate control. Then select R1 such that R1/R2 ratio maintains between 10 - 100. www.onsemi.com 2 Ω A Typical Electrical Characteristics (TA = 25 OC unless otherwise noted ) 1.5 1.5 1.2 VDROP , (V) VDROP ,(V) TJ = 125°C V IN = 5V VON/OFF = 1.5 - 8V PW =300us, D≤ 2% 1.2 0.9 T = 125°C J 0.6 T = 25°C J 0.9 0.6 T = 25°C J 0.3 V IN = 2.5V VON/OFF = 1.5 - 8V PW =300us, D≤ 2% 0.3 0 0 0.4 0.8 1.2 1.6 0 2 0 0.4 0.8 IL ,(A) 1.2 1.6 2 IL , (A) Figure 2. Conduction Voltage Drop Variation with Load Current. Figure 1. Conduction Voltage Drop Variation with Load Current. 1 I L = 1A V ON/OFF = 1.5 - 8V PW =300us, D≤ 2% R (ON) ,(Ohm) 0.8 0.6 T = 125°C J 0.4 T = 25°C J 0.2 0 2 4 6 8 10 VIN , (V) Figure 3. On-Resistance Variation with Input Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 4. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 2. Transient thermal response will change depending on the circuit board design. www.onsemi.com 3 200 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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