FDMB2308PZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET -20 V, -7 A, 36 mΩ Features General Description „ Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A This device is designed specifically as a single package solution „ Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art „ HBM ESD protection level 2.8 kV (Note 3) MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on). „ RoHS Compliant Application „ Li-Ion Battery Pack Pin 1 S1 Pin 1 S1 G1 G2 4 3 G1 S2 5 2 S1 S2 6 1 S1 D1/D2 S2 S2 G2 MLP 2x3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VS1S2 Source1 to Source2 Voltage VGS Gate to Source Voltage IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Current -Continuous TA = 25 °C (Note 1a) -Pulsed Ratings -20 Units V ±12 V -7 -30 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 57 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 161 °C/W Package Marking and Ordering Information Device Marking 308 Device FDMB2308PZ ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 Package MLP 2x3 1 Reel Size 7’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET April 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = -16 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VS1S2 = 0 V ±10 μA V On Characteristics VGS(th) rS1S2(on) gFS Gate to Source Threshold Voltage Static Source1 to Source2 On Resistance Forward Transconductance VGS = VS1S2, IS1S2 = -250 μA -0.9 -1.5 VGS = -4.5 V, IS1S2 = -5.7 A -0.6 27 36 VGS = -2.5 V, IS1S2 = -4.6 A 36 50 VGS = -4.5 V, IS1S2 = -5.7 A , TJ = 125 °C 35 49 VS1S2 = -5 V, IS1S2 = -5.7 A 29 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VS1S2 = -10 V, VGS = 0 V, f = 1 MHz 2280 3030 pF 361 540 pF 339 510 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate1 to Source1 Charge Qgd Gate1 to Source2 “Miller” Charge VS1S2 = -10 V, IS1S2 = -5.7 A VGS = -4.5 V, RGEN = 6 Ω VS1S2 = -10 V, IS1S2 = -5.7 A, VG1S1 = -4.5 V, VG2S2 = 0 V 14 25 ns 33 52 ns 74 118 ns 58 93 ns 22 30 nC 3.6 nC 7.7 nC Source1- Source2 Diode Characteristics Ifss Maximum Continuous Source1-Source2 Diode Forward Current Vfss V = 0 V, VG2S2= -4.5 V, Source1 to Source2 Diode Forward Voltage G1S 1 Ifss= -5.7 A (Note 2) -1 -5.7 A -1.6 V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 161 °C/W when mounted on a minimum pad of 2 oz copper a. 57 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 2 www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 30 VG1S1 = -4.5 V VG1S1 = -3 V VG1S1 = -2.5 V 20 VG1S1 = -2 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = -4.5 V VG1S1 = -1.8 V 0 0 0.5 1.0 1.5 2.0 30 VGS = -4.5 V VGS = -3 V 20 VGS = -2.5 V VGS = -2 V 10 VGS = -1.8 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 3 VG1S1 = -1.8 V VG1S1 = -2 V 2 VG1S1 = -3 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = -4.5 V 0 0 10 VG1S1 = -4.5 V 20 30 VGS = -1.8 V 3 VGS = -2 V 2 VGS = -3 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 rS1S2(on), SOURCE1 TO 1.2 1.0 0.8 75 100 125 20 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS1S2 = -5.7 A 100 TJ = 125 oC 50 TJ = 25 oC 0 1.5 150 TJ, JUNCTION TEMPERATURE (oC) 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. On Resistance vs Gate to Source Voltage Figure 5. Normalized On Resistance vs Junction Temperature ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 SOURCE2 ON-RESISTANCE (mΩ) NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE 1.4 50 VGS = -4.5 V 10 150 IS1S2 = -5.7 A VGS= -4.5 V 25 VGS = -2.5 V Figure 4. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.6 0 2.0 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 3. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage -25 1.5 4 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 0.6 -50 1.0 Figure 2. On-Region Characteristics NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE Figure 1. On-Region Characteristics VG1S1 = -2.5 V 0.5 -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 3 www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VS1S2 = -5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 1.0 1.5 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0 0 FORWARD CURRENT (A) VG1S1 = 0 V, VG2S2 = -4.5 V -Ifss, SOURCE1 TO SOURCE2 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 100 30 2.0 0 2.5 0.6 Figure 7. Transfer Characteristics 1.8 Figure 8. Source1 to Source2 Diode Forward Voltage vs Source Current 4.5 5000 VG2S2 = 0 V, IS1S2 = -5.7 A Ciss VS1S2 = -8 V CAPACITANCE (pF) -VG1S1, GATE1 TO SOURCE1 VOLTAGE (V) 1.2 -Vfss, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) 3.0 VS1S2 = -10 V VS1S2 = -12 V 1.5 1000 Coss Crss f = 1 MHz VGS = 0 V 100 0.1 0 0 5 10 15 20 25 1 10 20 -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Capacitance vs Source1 to Source2 Voltage Figure 9. Gate Charge Characteristics -3 -IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 10 VS1S2 = 0 V -4 10 -5 10 TJ = 125 oC -6 10 -7 10 -8 10 TJ = 25 oC -9 10 -10 10 0 5 10 15 20 -VGS, GATE TO SOURCE VOLTAGE (V) 10 1 ms 10 ms 1 0.1 100 ms THIS AREA IS LIMITED BY rDS(on) 1s 10 s SINGLE PULSE TJ = MAX RATED 0.01 DC RθJA = 161 oC/W TA = 25 oC 0.001 0.1 1 10 100 -VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 50 Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 161 C/W 100 o TA = 25 C 10 1 0.1 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 161 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 5 www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEA-C06 ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2013 Fairchild Semiconductor Corporation FDMB2308PZ Rev.C3 7 www.fairchildsemi.com FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® Global Power ResourceSM PowerTrench® BitSiC™ TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyCalc™ Green FPS™ e-Series™ QFET® CorePOWER™ TinyLogic® QS™ Gmax™ CROSSVOLT™ TINYOPTO™ Quiet Series™ GTO™ CTL™ TinyPower™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Marking Small Speakers Sound Louder Dual Cool™ TranSiC™ and Better™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ TriFault Detect™ EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SmartMax™ μSerDes™ MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® SuperFET® Ultra FRFET™ MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® SuperSOT™-8 VisualMax™ OPTOLOGIC® FastvCore™ SupreMOS® VoltagePlus™ OPTOPLANAR® FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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