FDMB3800N

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 30V, 4.8A, 40mΩ Features General Description „ Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A „ Fast switching speed „ Low gate Charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability. „ RoHS Compliant Q2 D2 5 D2 6 4 G2 3 S2 Q1 D1 7 2 G1 D1 8 1 S1 MicroFET 3X1.9 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 4.8 A 9 Power Dissipation TA = 25°C Note 1a) 1.6 Power Dissipation TA = 25°C (Note 1b) 0.75 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 165 °C/W Package Marking and Ordering Information Device Marking 3800 Device FDMB3800N ©2012 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package MicroFET3X1.9 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units Publication Order Number: FDMB3800N/D FDMB3800N Dual N-Channel PowerTrench® MOSFET FDMB3800N Dual N-Channel PowerTrench® MOSFET Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 24 mV/°C VDS = 24V, 1 VGS = 0V TJ = 55°C 10 VGS = ±20V, VDS = 0V μA ±100 nA 3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 1 1.9 -4 mV/°C VGS = 10V, ID = 4.8A 32 40 VGS = 4.5V, ID = 4.3A 41 51 VGS = 10V, ID = 4.8A, TJ = 125°C 43 61 VDS = 5V, ID = 4.8A 14 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS =15V, VGS = 0V, f = 1MHz f = 1MHz 350 465 pF 90 120 pF 40 60 pF Ω 3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 1A VGS = 10V, RGEN = 6Ω VGS = 0V to 5V VDD = 15V ID = 7.5A 8 16 5 10 ns ns 21 34 ns 2 10 ns 4 5.6 nC 1.0 nC 1.5 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain - Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 1.25A 1.25 (Note 2) IF = 4.8A, di/dt = 100A/μs 0.8 1.2 A V 17 ns 7 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 80°C/W when mounted on a 1 in2 pad of 2 oz copper b. 165°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. www.onsemi.com 2 FDMB3800N Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 8 2.8 4.5V 6.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 3.5V 6 3.0V 4 2 2.5V 2.6 VGS = 3.0V 2.4 2.2 2 1.8 3.5V 1.6 4.0V 1.4 1.2 1 10V 0.8 0 0 0.25 0.5 0.75 1 0 1.25 2 4 VDS, DRAIN-SOURCE VOLTAGE (V) 8 10 Figure 2. Normalized On - Resistance vs Drain Current and Gate Voltage 1.6 0.102 ID = 4.8A VGS = 10V DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.4 1.2 1 0.8 0.6 -50 ID = 2.4A 0.092 0.082 0.072 0.062 TJ = 125oC 0.052 0.042 TJ = 25oC 0.032 0.022 -25 0 25 50 75 100 125 150 2 3 4 o TJ, JUNCTION TEMPERATURE ( C) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature Figure 4. On- Resistance vs Gate to Source Voltage 10 15 12 25oC 125 C IS, REVERSE DRAIN CURRENT (A) TJ = -55oC VDS = 5V ID, DRAIN CURRENT (A) 6.0V 4.5V o 9 6 3 0 1.5 VGS = 0V 1 o TJ = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 2 2.5 3 3.5 0 4 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 600 VDS = 10V ID = 4.8A f = 1MHz VGS = 0 V 15V 500 8 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 Ciss 400 300 200 Coss 100 Crss 0 0 0 1 2 3 4 5 6 7 8 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 16 20 6 5 ID, DRAIN CURRENT (A) rDS(on) LIMIT 100us 1ms 1 10ms 0.1 VGS = 10V SINGLE PULSE RθJA = 165oC/W 100ms 1s 10s DC TJ = 25oC 0.01 0.1 VGS = 10V 4 3 VGS = 4.5V 2 RθJA = 80°C/W 1 0 1 10 100 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 12 Figure 8. Capacitance vs Drain to Source Voltage 100 10 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 75 100 125 o TA, AMBIENT TEMPERATURE ( C) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 180 SINGLE PULSE RθJA = 165°C/W TA= 25°C 150 120 90 60 30 0 0.0001 0.001 0.01 0.1 1 10 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 100 1000 FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ZθJA, NORMALIZED THERMAL IMPEDANCE 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) t1 t2 0.01 Peak TJ = TA + PDM *RθJA* ZθJA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMB3800N Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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