FDMC3612

General Description N-Channel Power Trench® MOSFET This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100 V, 12 A, 110 mΩ Features „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Applications „ Low Profile - 1 mm max in Power 33 „ DC - DC Conversion „ 100% UIL Tested „ PSE Switch „ RoHS Compliant Top 8 1 2 7 3 6 Bottom D D 5 G S 4 S D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S S MLP 3.3x3.3 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 16 12 (Note 1a) -Pulsed A 3.3 15 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 32 mJ 35 (Note 1a) Operating and Storage Junction Temperature Range W 2.3 -55 to + 150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.5 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC3612 Device FDMC3612 ©2012 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC3612/D FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 109 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 2.5 -7 mV/°C VGS = 10 V, ID = 3.3 A 92 110 VGS = 6 V, ID = 3.0 A 98 122 VGS = 10 V, ID = 3.3 A, TJ = 125 °C 177 212 VDS = 10 V, ID = 3.3 A 13 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 662 880 40 55 pF pF 23 35 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time 7.4 15 ns tr Rise Time 2.8 10 ns td(off) Turn-Off Delay Time tf Fall Time VDD = 50 V, ID = 3.3 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3.3 A 19 34 ns 2 10 ns 14.4 21 nC 7.9 12 nC 2.3 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.3 A (Note 2) 0.88 1.2 VGS = 0 V, IS = 2 A (Note 2) 0.77 1.2 34 55 ns 37 60 nC IF = 3.3 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V. www.onsemi.com 2 b) 125 °C/W when mounted on a minimum pad of 2 oz copper FDMC3612 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 12 VGS = 4.5 V VGS = 6 V VGS = 4 V 9 6 3 VGS = 3.5 V 0 0 1 2 3 4 2.5 VGS = 4 V 2.0 VGS = 4.5 V 1.5 1.0 0.5 0 5 3 6 9 12 15 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On Region Characteristics 2.4 400 ID = 3.3 A VGS = 10 V 2.2 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 3.3 A TJ = 125 oC 200 100 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 12 VDS = 5 V 9 TJ = 150 oC 6 TJ = 25 oC 3 2.5 3.0 3.5 = -55 oC 4.0 4.5 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ 4 VGS, GATE TO SOURCE VOLTAGE (V) 15 0 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 300 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 5.0 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics www.onsemi.com 3 1.2 FDMC3612 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 3.3 A Ciss 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 25 V VDD = 75 V 4 100 Coss f = 1 MHz VGS = 0 V 2 0 0 2 4 6 8 10 12 14 16 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 12 10 ID, DRAIN CURRENT (A) 30 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 9 VGS = 6 V 6 3 o RθJC = 3.5 C/W 1 0.001 0.01 0.1 1 0 25 10 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) 10 100 μs 1 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s DC RθJA = 125 oC/W TA = 25 oC 0.001 0.1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 50 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 10 0.1 1 10 100 500 SINGLE PULSE RθJA = 125 oC/W VGS = 10 V TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 100 1000 FDMC3612 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMC3612 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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