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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDMC6890NZ
Dual N-Channel PowerTrench® MOSFET
tm
20V, 4A, Q1:68mΩ, Q2:100mΩ
Features
General Description
Q1: N-Channel
FDMC6890NZ is a compact single package solution for DC to
DC converters
Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A
with
excellent
thermal and switching
characteristics. Inside the Power 33 package features two
Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A
N-channel MOSFETs with low on-state resistance and low gate
Q2: N-Channel
charge to
maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A
unclamped voltage input.
Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A
Low gate Charge
Application
RoHS Compliant
DC - DC Conversion
Bottom
Up
S1 D1/S2 D2
D2
G1 D1/S2 G2
D1
3
D1/S2 5
D2
S1
G1 D1/S2 G2
G2
4
S1 D1/S2 D2
2 D1/S2
1
6
G1
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Q1
20
VGS
Gate to Source Voltage
±12
ID
-Continuous
4
-Pulsed
10
Power Dissipation (Steady State) Q1
PD
(Note 1a)
Power Dissipation (Steady State) Q2
TJ, TSTG
Q2
20
Units
V
±12
V
1.92
1.78
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
Q1
RθJA
Thermal Resistance, Junction to Ambient
Q2
(Note 1a)
65
70
°C/W
Package Marking and Ordering Information
Device Marking
6890N
Device
FDMC6890NZ
©2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
Package
Power 33
1
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
October 2006
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
ID = 250µA, VGS = 0V
Q1
Q2
20
20
ID = 250µA, referenced to 25°C
Q1
Q2
Q1
Q2
1
1
µA
±10
±100
µA
nA
2
2
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS= 0V
Q1
Q2
V
13
12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
Q1
Q2
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
Q1
Q2
-3
-3
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 3A
Q1
58
77
68
100
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 2A
Q2
67
102
100
150
VDS = V, ID =4A
Q1
Q2
10
7
Q1
Q2
205
190
270
250
pF
Q1
Q2
60
60
80
80
pF
Q1
Q2
40
35
60
55
pF
Q1
Q2
3.3
2.8
Q1
Q2
4
4
10
10
ns
Q1
Q2
13
12
22
21
ns
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
0.6
0.6
0.9
1.0
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 10V, VGS = 0V, f= 1MHZ
f = 1MHz
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Q1
Q2
10
7
19
14
ns
tf
Fall Time
Q1
Q2
6
6
12
12
ns
Qg(TOT)
Total Gate Charge at 4.5V
Q1
Q2
2.4
1.8
3.4
2.6
nC
Qg(2)
Total Gate Charge at 2V
Q1
Q2
1.4
0.6
1.9
0.8
nC
Qgs
Gate to Source Gate Charge
Q1
Q2
0.4
0.5
nC
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
0.9
0.8
nC
FDMC6890NZ Rev.C
VDD = 10V, ID = 4A, RGEN = 6Ω
VGS = 0V to 4.5V
VDD = 10 V
ID = 4A
2
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 4A
Q1
Q2
0.94
0.92
1.25
1.25
V
trr
Reverse Recovery Time
Q1
Q2
18
17
27
26
ns
Q1
Q2
9
10
14
15
nC
IF = 4A, di/dt = 100A/s
Qrr
Reverse Recovery Charge
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 150°C/W when mounted on a
minimum pad of 2 oz copper
a. 65°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMC6890NZ Rev.C
3
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
12
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT (A)
3.0
VGS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
8
VGS = 2.5V
6
4
VGS = 1.8V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
ID = 4A
VGS = 4.5V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. Normalized On - Resistance
vs Junction Temperature
2.0
VGS = 2.5V
1.5
VGS = 4.5V
1.0
0.5
0
2
4
6
8
ID, DRAIN CURRENT(A)
10
12
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
7
6
5
TJ = 150oC
4
3
TJ = 25oC
2
1
TJ
0
0.0
= -55oC
0.5
1.0
1.5
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics
FDMC6890NZ Rev.C
ID = 4A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
160
TJ = 150oC
120
80
TJ = 25oC
40
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 4. On-Resistance vs Gate to
Source Voltage
9
ID, DRAIN CURRENT (A)
VGS = 1.8V
200
1.4
8
2.5
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
400
4.0
VDD = 8V
Ciss
3.5
3.0
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
4.5
VDD = 10V
2.5
2.0
VDD = 12V
1.5
1.0
100
0.5
1.0
1.5
2.0
2.5
20
0.1
3.0
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
20
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
6
20
10
5
4
3
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Crss
f = 1MHz
VGS = 0V
0.5
0.0
0.0
Coss
TJ = 25oC
2
TJ = 125oC
1
0.01
0.1
1
tAV, TIME IN AVALANCHE(ms)
100us
1
1ms
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1s
10s
DC
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
0.01
0.1
10
100ms
1
60
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
VGS = 10V
CURRENT AS FOLLOWS:
I = I25
10
150 – T A
-----------------------125
TA = 25oC
SINGLE PULSE
1
0.5 -4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 11.
FDMC6890NZ Rev.C
Single Pulse Maximum Power Dissipation
5
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.006
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDMC6890NZ Rev.C
6
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
3.0
10
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5V
VGS = 2.5V
6
4
2
VGS = 1.8V
0
0.0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID = 4A
VGS = 4.5V
1.3
1.2
1.1
1.0
0.9
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4
3
TJ = 150oC
2
TJ = 25oC
1
TJ = -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 17. Transfer Characteristics
FDMC6890NZ Rev.C
VGS = 2.5V
1.5
VGS = 4.5V
1.0
0.5
0
2
4
6
8
ID, DRAIN CURRENT(A)
10
12
ID = 4A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
160
120
TJ = 25oC
TJ = 150oC
80
40
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 15. Normalized On Resistance
vs Junction Temperature
5
2.0
200
1.5
0.7
-50
2.5
Figure 14. Normalized on-Resistance vS Drain
Current and Gate Voltage
Figure 13. On Region Characteristics
1.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 1.8V
20
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
7
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 N-Channel)
400
4.0
VDD = 8V
Ciss
3.5
3.0
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
4.5
VDD = 10V
2.5
2.0
VDD = 12V
1.5
1.0
100
Coss
0.5
0.0
0.0
0.4
0.8
1.2
1.6
20
0.1
2.0
Figure 20. Capacitance vs Drain
to Source Voltage
Figure 19. Gate Charge Characteristics
6
20
10
5
4
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
20
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
3
TJ = 25oC
2
TJ = 125oC
100us
1
0.1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
10ms
100ms
1s
10s
DC
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
1
1E-3
0.01
0.1
tAV, TIME IN AVALANCHE(ms)
0.01
0.1
1
1
60
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 22. Forward Bias Safe
Operating Area
Figure 21. Unclamped Inductive
Switching Capability
P(PK), PEAK TRANSIENT POWER (W)
Crss
f = 1MHz
VGS = 0V
200
100
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 – T A
-----------------------125
10
TA = 25oC
SINGLE PULSE
1
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 23. Single Pulse Maximum Power Dissipation
FDMC6890NZ Rev.C
8
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
1E-3
-5
10
-4
10
-3
10
-2
-1
10
10
0
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Transient Thermal Response Curve
FDMC6890NZ Rev.C
9
www.fairchildsemi.com
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics
(0.23)
3.0
0.05 C
A
(1.09)
(1.35)
6
B
4
(2.80)
(1.65)
3.0
(0.64)
0.05 C
PIN #1 IDENT
(0.70)
0.95 TYP
TOP VIEW
0.80
MAX
(0.82)
1
3
(0.65)
RECOMMENDED LAND PATTERN
0.10 C
(0.20)
0.08 C
0.05
0.00
C
SIDE VIEW
SEATING
PLANE
2.5 MAX.
0.41±0.05
1.17±0.05
0.61±0.05
3
1
PIN #1 IDENT
0.82±0.05
0.79±0.05
0.45
0.20
NOTES: UNLESS OTHERWISE SPECIFIED
A) CONFORMS TO JEDEC REGISTRATION,
MO-229, VARIATION WEEA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-MLP06HREV2
1.7 MAX.
0.10
0.05
0.2 MIN
4
6
0.95
1.90
BOTTOM VIEW
0.45
0.30
C A B
C
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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