FDMC7678

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This literature is subject to all applicable copyright laws and is not for resale in any manner. N-Channel Power Trench® MOSFET 30 V, 19.5 A, 5.3 mΩ Features General Description „ Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Bottom Top 8 1 7 6 D D D D 5 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S Pin 1 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Drain Current ID (Note 3) -Continuous (Package limited) TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 19.5 63 (Note 1a) 17.5 (Note 4) 54 -Pulsed A 70 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 31 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.0 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7678 Device FDMC7678 ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET November 2013 FDMC7678 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 21 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 17.5 A 4.2 5.3 Static Drain to Source On Resistance VGS = 4.5 V, ID = 15.0 A 5.1 6.8 VGS = 10 V, ID = 17.5 A TJ = 125 °C 5.7 7.2 VDD = 5 V, ID = 17.5 A 90 rDS(on) gFS Forward Transconductance 1.2 1.5 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V f = 1MHz 1810 2410 620 820 pF pF 75 110 pF 0.7 2.5 Ω 10 19 ns 4 10 ns 26 41 ns 3 10 ns nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 17.5 A VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V 28 39 Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 17.5 A 14 19 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC 4.4 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 17.5 A (Note 2) 0.8 1.2 IF = 17.5 A, di/dt = 100 A/μs V 30 49 ns 13 23 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b.125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurence only. No continuous rating is implied. 4. EAS of 54 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 2 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 70 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) 4 VGS = 10 V VGS = 6 V VGS = 4.5 V 50 VGS = 3.5 V 40 VGS = 3 V 30 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 VGS = 3 V 2 1 0 10 20 30 40 50 60 70 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 ID = 17.5 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 8 TJ = 125 oC 6 4 2 100 125 150 ID = 17.5 A TJ = 25 oC 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) 70 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID, DRAIN CURRENT (A) VGS = 6 V VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.0 VGS = 3.5 V VGS = 4.5 V 50 VDS = 5 V 40 TJ = 150 oC 30 TJ = 25 oC 20 10 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 0.01 0.0 3.5 0.4 0.6 0.8 1.0 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 3 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 17.5 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 25 Crss 30 0.1 30 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 4.0 C/W 60 TJ = 25 oC TJ = 100 oC TJ = 125 oC 50 VGS = 10 V 40 VGS = 4.5 V 30 20 10 Limited by Package 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 μs 10 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC 100 ms TA = 25 oC 0.01 0.01 0.1 1 10 100200 VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 100 10 SINGLE PULSE RθJA = 125 oC/W o TA = 25 C 1 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 5 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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