FDMC86520L

N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested Applications „ RoHS Compliant „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Bottom Top Pin 1 S S G S D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 13.5 A 60 Single Pulse Avalanche Energy PD Units V 22 -Pulsed EAS Ratings 60 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 79 mJ 40 (Note 1a) Operating and Storage Junction Temperature Range W 2.3 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86520L Device FDMC86520L ©2011 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC86520L/D FDMC86520L N-Channel PowerTrench® MOSFET FDMC86520L Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 29 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 13.5 A 6.5 7.9 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 11.5 A 9.1 11.7 VGS = 10 V, ID = 13.5 A, TJ = 125 °C 9 11 VDS = 5 V, ID = 13.5 A 49 gFS Forward Transconductance 1 1.7 -7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 3420 4550 pF 638 850 pF 25 40 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time 15 30 tr Rise Time 5.2 10 ns td(off) Turn-Off Delay Time 32 55 ns VDD = 30 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 Ω tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 13.5 A ns 3.4 10 ns 45 64 nC 21 30 nC 9.6 nC 4.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 13.5 A (Note 2) 0.82 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.71 1.2 38 62 ns 21 34 nC IF = 13.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 23 A, VDD = 54 V, VGS = 10 V. www.onsemi.com 2 125 °C/W when mounted on a minimum pad of 2 oz copper FDMC86520L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 60 ID, DRAIN CURRENT (A) 50 VGS = 3.5 V 40 VGS = 10 V VGS = 4.5 V 30 VGS = 3 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 VGS = 4 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 3 V VGS = 3.5 V 2 VGS = 4 V VGS = 4.5 V 1 VGS = 10 V 0 2.5 0 10 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 13.5 A VGS = 10 V ID = 13.5 A 50 60 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 40 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 40 40 1.6 50 30 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.8 60 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13.5 A VDD = 30 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 40 V VDD = 20 V 6 4 Ciss 1000 Coss 100 10 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 1 0.1 50 1 Figure 7. Gate Charge Characteristics 60 Figure 8. Capacitance vs. Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC 50 VGS = 10 V 40 VGS = 4.5 V 30 20 Limited by package 10 TJ = 125 oC 1 0.01 0.1 1 o RθJC = 3.1 C/W 10 0 25 100 50 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC o TA = 25 C 0.01 0.01 0.1 1 10 P(PK), PEAK TRANSIENT POWER (W) 100 us 10 0.1 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 100 300 2000 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, spe-cifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 FDMC86520L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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