FDMS3662

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design „ 100% UIL Tested „ RoHS Compliant Application „ DC - DC Conversion Bottom Top S Pin 1 D D D Pin 1 S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25°C -Continuous TA = 25°C ID TJ, TSTG ±20 V (Note 1a) 8.9 A 90 Single Pulse Avalanche Energy PD Units V 39 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 384 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS3662 Device FDMS3662 ©2009 Fairchild Semiconductor Corporation FDMS3662 Rev.C3 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS3662 N-Channel Power Trench® MOSFET November 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 100 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 80V, 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4.5 V 74 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.5 3.5 -10.8 mV/°C VGS = 10V, ID = 8.9A 11.4 14.8 VGS = 10V, ID = 8.9A, TJ = 125°C 19.0 24.7 VDD = 10V, ID = 8.9A 37 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 3470 4620 pF 245 325 pF 110 165 pF Ω 1.4 Switching Characteristics 25 40 ns 15 26 ns 32 52 ns Fall Time 6 10 ns Qg Total Gate Charge at 10V 54 75 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf VDD = 50V, ID = 8.9A, VGS = 10V, RGEN = 6Ω VDD = 50V, ID = 8.9A 18 nC 15 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 8.9A (Note 2) 0.8 1.3 VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 IF = 8.9A, di/dt = 100A/μs V 45 73 ns 71 115 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 100V, VGS = 10V ©2009 Fairchild Semiconductor Corporation FDMS3662 Rev.C3 2 www.fairchildsemi.com FDMS3662 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 90 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 VGS = 10V VGS = 7V VGS = 8V VGS = 6.5V 60 30 VGS = 6V PULSE DURATION = 300μs DUTY CYCLE = 2%MAX 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 6.5V 1.0 VGS = 8V VGS = 10V 0.5 4 0 30 60 90 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 40 ID = 8.9A VGS = 10V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 SOURCE ON-RESISTANCE (mΩ) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 7V 1.5 Figure 1. On-Region Characteristics PULSE DURATION = 300μs DUTY CYCLE = 2%MAX 30 ID = 8.9A TJ = 125oC 20 10 TJ = 25oC 0 -50 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 90 IS, REVERSE DRAIN CURRENT (A) 90 PULSE DURATION = 300μs DUTY CYCLE = 2%MAX ID, DRAIN CURRENT (A) PULSE DURATION = 300μs DUTY CYCLE = 2%MAX VGS = 6V VDS = 10V 60 TJ = 150oC TJ = 25oC 30 TJ = -55oC 4 5 6 7 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 0 3 VGS = 0V 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMS3662 Rev.C3 3 1.2 www.fairchildsemi.com FDMS3662 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS3662 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 Ciss VDD = 50V ID = 8.9A 8 VDD = 25V VDD = 75V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 4 1000 Coss 100 Crss 2 f = 1MHz VGS = 0V 0 0 20 40 10 0.1 60 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 100 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25oC TJ = 125oC 40 VGS = 10 V 20 Limited by Package o RθJC = 1.2 C/W 1 0.01 0.1 1 10 100 0 25 400 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 50000 100 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 μs 10 1 SINGLE PULSE 1 ms TJ = MAX RATED RθJC = 1.2 oC/W TC = 25 oC 0.1 0.1 10000 100 μs THIS AREA IS LIMITED BY 100rDS(on) μs 10 ms CURVE BENT TO MEASURE DATA 1 10 DC 100 400 TC = 25 oC 1000 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS3662 Rev.C3 SINGLE PULSE RθJC = 1.2 oC/W 4 www.fairchildsemi.com r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZθJC(t) = r(t) x RθJC SINGLE PULSE RθJC = 1.2 °C/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS3662 Rev.C3 5 www.fairchildsemi.com FDMS3662 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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