FDN359BN

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features • 2.7 A, 30 V. General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS ID Gate-Source Voltage ±20 V A Maximum Drain Current – Continuous (Note 1a) – Pulsed 15 Maximum Power Dissipation PD TJ, TSTG 2.7 (Note 1a) 0.5 (Note 1b) 0.46 −55 to +150 Operating and Storage Temperature Range W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 359B FDN359BN 7’’ 8mm 3000 units ©2006 Fairchild Semiconductor Corporation FDN359BN Rev A(W) FDN359BN January 2006 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA 30 ID = 250 µA,Referenced to 25°C VDS = 24 V, V 21 VGS = 0 V O TJ = -55 C IGSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = ±20 V, Gate–Body Leakage VDS = 0 V mV/°C 1 µA 10 µA ±100 nA 3 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C 1 1.8 –4 0.026 0.032 0.033 mV/°C 0.046 0.060 0.075 Ω ID(on) On–State Drain Current ID = 2.7 A VGS = 10 V, ID = 2.4 A VGS = 4.5 V, VGS = 10 V, ID = 2.7 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 2.7 A 11 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 485 650 pF 105 140 pF 65 100 pF 15 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time f = 1.0 MHz Ω 1.8 (Note 2) VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 7 14 ns ns tr Turn–On Rise Time 5 10 td(off) Turn–Off Delay Time 20 35 ns tf Turn–Off Fall Time 2 4 ns 5 7 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 2.7 A, nC 1.3 nC 1.8 nC FDN359BN Rev A(W) FDN359BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 0.42 A (Note 2) IF = 2.7A, diF/dt = 100 A/µs 0.42 A 0.7 1.2 V 12 20 ns 3 5 nC otes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN359BN Rev A(W) FDN359BN Electrical Characteristics FDN359BN Typical Characteristics 2.6 15 ID, DRAIN CURRENT (A) 12 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V VGS = 10V 4.0V 9 3.0V 6 3 2.5V VGS = 3.0V 2.2 1.8 4.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 5.0V 6.0 10.0V 0 2.5 Figure 1. On-Region Characteristics. 3 6 9 ID, DRAIN CURRENT (A) 12 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.2 ID = 2.7A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 1 0.6 0 1.1 1 0.9 0.8 ID = 1.35A 0.06 TA = 125oC 0.04 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 15 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 3.5V 1.4 12 9 6 o o TA = 125 C -55 C 3 25oC 10 1 0.1 o TA = 125 C 0.01 o 25 C 0.001 o -55 C 0.0001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN359BN Rev A(W) FDN359BN Typical Characteristics 10 800 f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) ID = 2.7A CAPACITANCE (pF) 8 VDS = 10V 20V 6 15V 4 600 Ciss 400 Coss 200 2 Crss 0 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 30 100µs RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100 1ms 10ms 100ms 1 1s DC VGS = 10V SINGLE PULSE o RθJA = 270 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 270°C/W TA = 25°C 25 20 15 10 5 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 270 °C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 0.01 0.001 0.0001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN359BN Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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