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FDN361BN
30V N-Channel, Logic Level, PowerTrench MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
x 1.4 A, 30 V.
RDS(ON) = 110 m: @ VGS = 10 V
RDS(ON) = 160 m: @ VGS = 4.5 V
x Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
x Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
x High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
G
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
r 20
V
ID
Drain Current
1.4
A
– Continuous
(Note 1a)
– Pulsed
10
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
0.5
(Note 1b)
0.46
W
–55 to +150
qC
(Note 1a)
250
qC/W
(Note 1)
75
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
RTJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361B
FDN361BN
7’’
8mm
3000 units
2009 Fairchild Semiconductor Corporation
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Fe bruary 2009
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 PA
VGS = 0 V,
ID = 250 PA,Referenced to 25qC
Zero Gate Voltage Drain Current
VDS = 24 V,
30
V
26
1
PA
10
PA
r100
nA
2.1
3
V
92
120
114
110
160
150
m:
VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55qC
IGSS
Gate–Body Leakage
On Characteristics
VGS = r20 V,
VDS = 0 V
ID = 250 PA
mV/qC
(Note 2)
1
VGS(th)
Gate Threshold Voltage
VDS = VGS,
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 1.4 A
VGS = 4.5 V,
ID = 1.2 A
VGS = 10 V, ID = 1.4 A, TJ = 125qC
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 1.4 A
4
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
145
193
pF
35
47
pF
15
23
pF
3.5
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
:
VGS = 15 mV,
f = 1.0 MHz
1.6
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 :
3
6
ns
8
16
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
16
29
ns
tf
Turn–Off Fall Time
2
4
ns
Qg
Total Gate Charge
1.3
1.8
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 4.5 V
ID = 1.4 A,
nC
0.5
nC
0.5
nC
Drain–Source Diode Characteristics
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IF = 1.4 A,
IS = 0.42 A
(Note 2)
diF/dt = 100 A/µs
0.8
1.2
11
22
4
V
nS
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 250qC/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width d300 Ps, Duty Cycle d2.0%
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Electrical Characteristics
5
2.8
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
ID, DRAIN CURRENT (A)
6.0V
4
3
3.5V
2
1
3.0V
2.6
2.4
VGS = 3.5V
2.2
2
1.8
1.6
4.0V
4.5V
1.4
5.0V
1.2
6.0V
10V
1
0.8
0
0
0.5
1
1.5
0
2
1
2
Figure 1. On-Region Characteristics.
5
0.25
ID = 1.4A
VGS = 10V
ID = 0.7A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.225
0.2
0.175
TA = 125oC
0.15
0.125
0.1
TA = 25oC
0.075
-50
-25
0
25
50
75
100
125
3
150
4
5
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
3
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
3
2
TA = 125oC
1
25oC
-55oC
0
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDN361BN Rev A1(W)
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Typical Characteristics
10
200
VGS, GATE-SOURCE VOLTAGE (V)
ID =1.4A
VDS = 10V
180
15V
8
CAPACITANCE (pF)
20V
6
4
140
120
100
2
80
60
COSS
40
20
CRSS
0
0
0
0.5
1
1.5
2
2.5
0
3
5
Qg, GATE CHARGE (nC)
15
20
25
30
Figure 8. Capacitance Characteristics.
100
5
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100Ps
10
RDS(ON) LIMIT
1ms
10ms
100ms
1
1s
VGS = 10V
SINGLE PULSE
RTJA = 270oC/W
0.1
DC
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RTJA = 270°C/W
TA = 25°C
4
3
2
1
0
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
f = 1 MHz
VGS = 0 V
CISS
160
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
D = 0.5
RTJA(t) = r(t) * RTJA
0.2
RTJA = 270 C/W
o
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Typical Characteristics
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
PSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
The Power Franchise®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I38
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