FDN5630

FDN5630 FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. ON Semiconductor’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space. 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V • RDS(ON) = 0.120 Ω @ VGS = 6 V. • Optimized for use in high frequency DC/DC converters. • Low gate charge. • Very fast switching. • SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint. Applications • DC/DC converter • Motor drives D D S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol S TA = 25 C unless otherwise noted Parameter Ratings Units V VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 1.7 A PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 - Continuous - Pulsed TJ, Tstg 10 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 5630 FDN5630 7 8mm 3000 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev. 4 Publication Order Number: FDN5630/D Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA IGSSR On Characteristics 60 V 63 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(ON) Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Static Drain-Source On-Resistance 1 2.4 3 -6.9 0.073 0.127 0.083 V mV/°C 0.100 0.180 0.120 Ω ID(on) On-State Drain Current VGS = 10 V, ID = 1.7 A VGS = 10 V, ID = 1.7 A, TJ = 125°C VGS = 6 V, ID = 1.6 A VGS = 10 V, VDS = 1.7 V gFS Forward Transconductance VDS = 10 V, ID = 1.7 A 6 VDS = 15 V, VGS = 0 V, f = 1.0 MHz 400 560 pF 65 95 pF 27 40 pF 10 20 ns 5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 20 V, ID = 1.7 A, VGS = 10 V, 6 15 ns 15 28 ns 5 15 ns 7 10 nC 1.6 nC 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.42 A 1.2 V 0.72 Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDN5630 Electrical Characteristics FDN5630 Typical Characteristics 10 1.5 5.0V 6.0V 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 6 4.0V 4 2 3.5V 1.4 VGS = 4.5V 1.3 5.0V 1.2 6.0V 1.1 7.0V 10V 1 0 0 1 2 4 3 0.9 5 0 VDS, DRAIN-SOURCE VOLTAGE (V) 2 4 6 8 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0.25 ID =1.7A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 ID = 1.7A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 0.4 -50 -25 0 25 50 75 100 125 2 150 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 VDS =5V 25oC IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) 8 6 o 125 C o TA = -55 C 4 2 0 VGS=0 1 TJ=125oC 0.1 25oC o -55 C 0.01 0.001 1 2 3 4 5 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 10 600 VDS = 10V ID = 1.7A 20V 8 f = 1MHz VGS = 0 V 500 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDN5630 Typical Characteristics 6 4 2 CISS 400 300 200 COSS 100 CRSS 0 0 0 2 4 6 0 8 10 30 40 10 SINGLE PULSE o RθJA=270 C/W 16 10ms o TA=25 C POWER (W) 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 270oC/W 0.1 60 20 100µs 1ms RDS(ON) LIMIT 1 50 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 12 8 4 TA = 25oC 0 0.01 0.1 1 10 0.0001 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R θJA (t) = r(t) * RθJA R θJA = 270 C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - TA = P * RθJA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. 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