FDP8441

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features Applications „ Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A „ Solenoid and Motor Drivers „ Typ Qg(10) = 215nC at VGS = 10V „ Distributed Power Architectures and VRMs „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant ©2012 Fairchild Semiconductor Corporation FDP8441 Rev. C0 1 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET December 2012 Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC < 160oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) ID 23 Pulsed EAS PD TJ, TSTG A See Figure 4 Single Pulse Avalanche Energy (Note 1) 947 Power dissipation W 2 W/oC -55 to 175 oC Derate above 25oC Operating and Storage Temperature mJ 300 Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) 0.5 o 62 oC/W C/W Package Marking and Ordering Information Device Marking FDP8441 Device FDP8441 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V - - VDS = VGS, ID = 250µA 2 2.8 4 ID = 80A, VGS = 10V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 3.6 4.7 - 15000 - pF - 1250 - pF - 685 - pF TJ = 150°C µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 215 280 nC VGS = 0 to 2V - 29 38 nC - 60 - nC - 32 - nC - 49 - nC Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDP8441 Rev. C0 VDS = 25V, VGS = 0V, f = 1MHz 2 VDD = 20V ID = 35A Ig = 1mA www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns ISD = 35A - 0.8 1.25 V ISD = 15A - 0.8 1.0 V VDD = 20V, ID = 35A VGS = 10V, RGS = 1.5Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs - 52 68 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs - 76 99 nC Notes: 1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A. 2: Pulse width = 100s. FDP8441 Rev. C0 3 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 150 100 50 50 75 100 TC, CASE Figure 1. Normalized Power Dissipation vs Case Temperature VGS = 10V 200 0 25 175 CURRENT LIMITED BY PACKAGE 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDP8441 Rev. C0 4 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics 4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 10us If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 5V 120 o TJ = 175 C 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 VGS = 10V VGS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability 4.0 4.5 120 VGS = 4.5V 80 VGS = 4V 40 VGS = 3.5V 0 5.0 0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 40 TJ = 25oC TJ = 175oC 20 10 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP8441 Rev. C0 2 3 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 30 1 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage FDP8441 Rev. C0 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.10 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250µA Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP8441 Rev. C0 7 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ The Power Franchise® 2Cool™ PowerTrench® ® FRFET® PowerXS™ AccuPower™ AX-CAP™* Programmable Active Droop™ Global Power ResourceSM ® ® BitSiC QFET Green Bridge™ TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ and Better™ Dual Cool™ SmartMax™ TranSiC® MegaBuck™ EcoSPARK® SMART START™ TriFault Detect™ MICROCOUPLER™ EfficentMax™ Solutions for Your Success™ TRUECURRENT®* MicroFET™ ESBC™ SPM® μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ ® SyncFET™ OptoHiT™ FAST ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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