FDP8876

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com                                                                                                                                                                                                                FDP8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low rDS(ON) either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. High power and current handling capability RoHS Compliant DRAIN (FLANGE) D SOURCE DRAIN GATE G TO-220AB S FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 25oC, VGS = 4.5V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Ratings 30 ±20 Units V V 70 A 64 Figure 4 180 70 -55 to 175 A A mJ W o C 2.14 oC/W Thermal Characteristics R JC R JA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 62 o C/W Package Marking and Ordering Information Device Marking FDP8876 Device FDP8876 ©2005 Fairchild Semiconductor Corporation FDP8876 Rev. A Package TO-220AB 1 Reel Size Tube Tape Width N/A Quantity 50 units www.fairchildsemi.com FDP8876 N-Channel PowerTrench® MOSFET November 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units ID = 250 A, VGS = 0V VDS = 24V VGS = 0V TA = 150oC VGS = ±20V 30 - V A - - 1 250 ±100 VGS = VDS, ID = 250 A ID = 40A, VGS = 10V ID = 40A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC 1.2 - 6.1 7.7 2.5 8.7 10.5 - 11 14 VGS=0.5V, f = 1MHz VGS = 0V to 10V VDD = 15V VGS = 0V to 5V ID = 40A VGS = 0V to 1V Ig = 1.0mA - 1700 340 210 2.3 32 17 1.6 4.7 3.1 7.0 45 24 2.4 - nC nC nC nC nC nC VDD = 15V, ID = 40A VGS = 10V, RGS = 10 - 9 97 51 39 - 189 135 ns ns ns ns ns ns ISD = 40A ISD = 3.2A ISD = 40A, dISD/dt=100A/ s ISD = 40A, dISD/dt=100A/ s - - 1.25 1.0 22 9 V V ns nC Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current nA On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance V m Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Sourse Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz pF pF pF Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristic VSD Source to Drain Diode Voltage trr QRR Reverse Recovery Time Reverse Recovered Charge Notes: 1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V 2: Pulse width=100s FDP8876 Rev. A 2 www.fairchildsemi.com FDP8876 N-Channel PowerTrench® MOSFET Electrical Characteristics 2.6 100 TC=25oC VGS=4.5V 80 60 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID,DRAIN DURRENT(A) VGS=10V VGS=3.5V 40 VGS=3V 20 PULSE DURATION=80 S DUTY CYCLE=0.5%MAX 0 0.0 0.5 1.0 1.5 2.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 2.5 20 30 VDS,DRAIN TO SOURSE VOLTAGE(V) RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.016 ID = 40A VGS = 10V 1.2 1.0 0.8 PULSE DURATION=80 S DUTY CYCLE=0.5%MAX -40 0 40 80 120 o TJ, JUNCTION TEMPERATURE ( C) 160 0.012 70 80 200 ID=40A o TA = 125 C 0.010 0.008 0.006 o TA = 25 C 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 160 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX VDD = 15V VGS=0V IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 60 PULSE DURATION=80 S DUTY CYCLE=0.5%MAX 0.014 Figure 3. On Resistance Variation with Temperature 120 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 0.6 -80 40 ID,DRAIN CURRENT Figure 1. On Region Characteristics 1.4 3v 3.5v 4v 4.5v 5v 10v 80 TJ = 175oC TJ = 25oC 40 TJ = -55oC 2.0 2.5 3.0 3.5 4.0 4.5 25oC 0.1 -25oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature Figure 5. Transfer Characteristics FDP8876 Rev. A 125oC 1 0.01 0.0 0 1.5 10 3 www.fairchildsemi.com FDP8876 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted VGS,GATE TO SOURCE VOLTAGE(V) 10 5000 VDD=15V CISS CGS + CGD 8 6 1000 COSS CDS + CGD 4 CRSS CGD WAVEFORMS IN DESCENDING ORDER: ID=40A,ID=5A 2 0 0 5 10 15 20 25 30 100 0.1 35 VGS = 0V, f = 1MHz 1 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Qg,GATE CHARGE(nC) Figure 7. Gate Charge characteristics Figure 8. Saturation characteristics 1000 100 10 s 100 STARTING TJ = 25oC STARTING TJ = 1 100 s 10 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD ) If R 0 tAV = (L/R)ln[(IAS *R)/(1.3*RATED BVDSS - VDD) +1] 0.001 0.01 0.1 1 10 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms DC 0.1 100 1 10 Figure 9. Unclamped Inductive Switching Capability 60 VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 10. Safe Operating Area 800 80 ID, DRAIN CURRENT (A) 1ms 1 SINGLE PULSE R JC = 2.14oC/W TJ = 25oC 60 VGS = 10V 40 VGS = 4.5V 20 100 60 0 25 50 75 100 125 o 150 10-5 175 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) TC, CASE TEMPERATURE ( C) Figure 12. Normalized Drain to Source Breake Down Voltage vs Junction Temperature Figure 11. Maximum Continuous Drain Current vs Case Temperature FDP8876 Rev. A 10-4 4 www.fairchildsemi.com FDP8876 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted Typical Characteristics TA = 25°C unless otherwise noted Z JC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJC x RqJC + TC SINGLE PULSE 0.01 10-5 10-4 10-2 10-3 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 13. Normolized Maximum Transient Thermal Impedance FDP8876 Rev. A 5 www.fairchildsemi.com FDP8876 N-Channel PowerTrench® MOSFET 2                                                                                                                                                                                                                                                                                                                                                                                                                                           ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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