Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDPF190N15A
N-Channel PowerTrench® MOSFET
150 V, 27.4 A, 19 mΩ
Features
Description
• RDS(on) = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.
• Low Gate Charge, QG = 31 nC (Typ.)
• Low Crss (Typ. 56 pF)
• Fast Switching Speed
Applications
• Improved dv/dt Capability
• Consumer Appliances
• RoHS Compliant
• LED TV
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
D
S
G
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
FDPF190N15A
150
- DC
±20
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
27.4
- Continuous (TC = 100oC)
- Pulsed
17.4
V
A
(Note 1)
110
A
(Note 2)
261
mJ
(Note 3)
6.0
V/ns
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
±30
Unit
V
- Derate Above 25oC
33
W
0.26
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDPF190N15A
RθJC
Thermal Resistance, Junction to Case, Max.
3.3
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
1
Unit
oC/W
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
November 2015
Part Number
FDPF190N15A
Top Mark
FDPF190N15A
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
-
-
V
-
0.14
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to
25oC
VDS = 120 V, VGS = 0 V
-
-
1
VDS = 120 V, TC = 150oC
-
-
500
VGS = ±20 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.0
-
4.0
V
Static Drain to Source On Resistance
-
14.7
19.0
mΩ
gFS
Forward Transconductance
VGS = 10 V, ID = 27.4 A
VDS = 10 V, ID = 27.4 A
-
64
-
S
-
2020
2685
pF
-
700
930
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
56
85
VDS = 75 V, VGS = 0 V
-
252
-
pF
VDS = 120 V, ID = 27.4 A,
VGS = 10 V
-
30
39
nC
-
8.8
-
nC
-
7.3
-
nC
-
1.5
-
Ω
-
18
46
ns
-
16
42
ns
-
32
74
ns
-
8
26
ns
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 75 V, ID = 27.4 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
27.4
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
110
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 27.4 A
-
-
1.3
V
trr
Reverse Recovery Time
-
76
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 27.4 A,
dIF/dt = 100 A/μs, VDD = 120 V
-
0.18
-
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.33 mH, IAS = 29 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 27.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
2
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
200
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
ID, Drain Current[A]
100
ID, Drain Current[A]
Figure 2. Transfer Characteristics
200
10
o
150 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
o
4
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
1
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
3
4
5
VGS, Gate-Source Voltage[V]
6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.020
200
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
100
VGS = 10V
0.015
VGS = 20V
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.010
*Note: TC = 25 C
0
25
50
75
ID, Drain Current [A]
100
1
0.0
125
Figure 5. Capacitance Characteristics
2. 250μs Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
5000
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
1000
Coss
100
10
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
5
0.1
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
6
4
2
0
100 200
3
VDS = 30V
VDS = 75V
VDS = 120V
8
*Note: ID = 27.4A
0
8
16
24
Qg, Total Gate Charge [nC]
32
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.5
1.0
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
*Notes:
1. VGS = 10V
2. ID = 27.4A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
500
30
100
25
100μs
ID, Drain Current [A]
ID, Drain Current [A]
2.0
10
1ms
Operation in This Area
is Limited by R DS(on)
1
100ms
DC
*Notes:
0.1
10ms
20
15
10
o
1. TC = 25 C
5
o
0.01
0.1
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
300
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
2.5
EOSS, [μJ]
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
150
4
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDPF190N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
ZθJC
(t), Thermal
Response
[o]C/W]
Thermal
Response
[ZθJC
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
o
1. ZθJC(t) = 3.8 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
t2
*Notes:
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular
[sec]
t1, RectangularPulse
PulseDuration
Duration [sec]
5
1
10
100
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
6
www.fairchildsemi.com
FDPF190N15A — N-Channel PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. 1.5
7
www.fairchildsemi.com
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com