FDS3601

FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • Low gate charge (3.7nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D1 D1 5 D2 6 D2 4 3 Q1 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 2 Q2 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current 1.3 A – Continuous (Note 1a) – Pulsed PD 6 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG W 0.9 –55 to +175 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3601 FDS3601 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS3601 Rev C(W) FDS3601 August 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 50 V, ID= 1.3 A 26 mJ 1.3 A Off Characteristics VGS = 0 V, ID = 250 µA 100 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics ID = 250 µA,Referenced to 25°C 105 mV/°C µA 10 (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C 2 2.6 VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 1.3 A ID = 1.3 A VGS = 6 V, VGS = 10 V, ID = 1.3 A, TJ = 125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 5V, ID = 1.3 A 3.6 VDS = 50 V, f = 1.0 MHz V GS = 0 V, 153 pF 5 pF 1 pF –5 350 376 664 mV/°C 480 530 955 3 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) 8 16 ns 4 8 ns Turn–Off Delay Time 11 20 ns Turn–Off Fall Time 6 12 ns 3.7 5 nC VDD = 50 V, VGS = 10 V, VDS = 50 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 1.3 A, 0.8 nC 1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 2 0.02 in pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS3601 Rev C(W) FDS3601 Electrical Characteristics FDS3601 Typical Characteristics 4 1.6 5.0V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS =10V 4.5V 3 4.0V 2 1 0 VGS = 4.0V 1.4 4.5V 1.2 5.0V 10V 1 0.8 0 2 4 6 0 8 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.25 2.6 ID = 1.3A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 1.4 1 0.6 0.2 ID = 0.6A 1 TA = 125oC 0.75 0.5 TA = 25oC 0.25 -50 -25 0 25 50 75 100 125 150 175 2.5 4 o TJ, JUNCTION TEMPERATURE ( C) 5.5 7 8.5 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) 6 VDS = 5V ID, DRAIN CURRENT (A) 6.0V 4.5 3 TA = 125oC 25oC 1.5 -55oC VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3601 Rev C(W) FDS3601 Typical Characteristics 200 ID = 1.3A VDS = 30V 8 70V 6 4 150 100 50 2 COSS CRSS 0 0 0 1 2 3 4 0 10 Qg, GATE CHARGE (nC) 10 P(pk), PEAK TRANSIENT POWER (W) 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.01 TA = 25oC 0.001 0.1 1 10 50 100 SINGLE PULSE RθJA =135°C/W TA = 25°C 40 30 20 10 0 0.001 1000 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 50 1ms 1 30 Figure 8. Capacitance Characteristics. 100µs RDS(ON) LIMIT 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 50V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3601 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3