FDS4935BZ

tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench“ MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V RDS(ON) = 35 m: @ VGS = – 4.5 V x Extended VGSS range (–25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. x ESD protection diode (note 3) x High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. low RDS(ON) x High power and current handling capability DD1 DD1 D2 D 4 5 DD2 6 3 Q1 2 7 SO-8 Pin 1 SO-8 G2 S2 S 8 S Q2 1 S Absolute Maximum Ratings Symbol G1 S1 G TA=25oC unless otherwise noted Ratings Units VDS\ Drain-Source Voltage Parameter –30 V VGS Gate-Source Voltage +25 V ID Drain Current –6.9 A – Continuous (Note 1a) – Pulsed PD –50 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 0.9 –55 to +150 qC (Note 1a) 78 qC/W (Note 1) 40 qC/W Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient RTJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units ”2006 Fairchild Semiconductor Corporation FDS4935BZ Rev B1 (W) FDS4935BZ September 2006 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min ID = –250 PA –30 Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS V Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 Gate–Body Leakage VGS = +25 V, VDS = 0 V +10 PA PA –3 V On Characteristics 24 ID = –250 PA,Referenced to 25qC mV/qC (Note 2) VGS(th) 'VGS(th) 'TJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = –250 PA ID = –250 PA,Referenced to 25qC –1 –1.9 –5 mV/qC VGS = –10 V, ID = –6.9 A VGS = –4.5 V, ID = –5.3 A VGS = –10 V, ID = –6.9A,TJ=125qC VDS = –5 V, ID = –6.9 A 18 27.5 26 22 VDS = –15 V, V GS = 0 V, f = 1.0 MHz 1360 pF 240 pF 200 pF 22 35 34 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time (Note 2) VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 : 12 22 ns 13 23 ns 68 108 ns tf Turn–Off Fall Time Qg(TOT) Total Gate Charge, VGS = 10V Qg(TOT) Total Gate Charge, VGS = 5V Qgs Gate–Source Charge 4 nC Qgd Gate–Drain Charge 7 nC VDS = –15 V, ID = –6.9 A, VGS = –10 V 38 61 ns 29 40 nC 16 23 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD tRR QRR Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage I Reverse Recovery Time F = –8.8 A, d iF/dt = 100 A/µs Reverse Recovery Charge (Note 2) –0.8 (Note 2) –2.1 A –1.2 V 24 ns 9 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 78°C/W steady state when mounted on a 2 1in pad of 2 oz copper b) 125°C/W when mounted on a .04 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS4935BZ Rev B1 (W) FDS4935BZ Electrical Characteristics FDS4935BZ Typical Characteristics 50 3 -5.0V -4.5V 40 -ID, DRAIN CURRENT (A) VGS = -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -6.0V 30 -4.0V 20 -3.5V 10 -3.0V 2.6 2.2 -4.0V 1.8 -4.5V -5.0V 1.4 -8.0V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 4 Figure 1. On-Region Characteristics. 10 20 30 -ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 ID = -8.8A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1 0.6 0 1.4 1.2 1 0.8 0.6 ID = -4.4A 0.06 TA = 125oC 0.04 TA = 25oC 0.02 0 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -6.0V 40 30 20 o TA = 125 C o -55 C 10 o VGS = 0V 10 TA = 125oC 1 o 25 C -55oC 0.1 0.01 25 C 0.001 0 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4935BZ Rev B1 (W) FDS4935BZ Typical Characteristics 2000 f = 1 MHz VGS = 0 V ID = -8.8A 1600 8 VDS = -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -20V 6 -15V 4 Ciss 1200 800 Coss 400 2 Crss 0 0 0 6 12 18 24 Qg, GATE CHARGE (nC) 30 0 36 20 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 100Ps 1ms 10 10ms 100ms 1s 1 DC VGS = -10V SINGLE PULSE RTJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RTJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.1 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA 0.2 0.1 o RTJA = 125 C/W 0.1 0.05 P(pk) 0.02 t1 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4935BZ Rev B1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20