FDS6673BZ

-30V, -14.5A, 7.8m: Features General Description This P-Channel MOSFET is produced using ON „ Max rDS(on) = 7.8m:VGS = -10V, ID = -14.5A Semiconductor’s advanced Power Trench process that „ Max rDS(on) = 12m:VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state „ Extended VGS range (-25V) for battery applications resistance. „ HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook „ High performance trench technology for extremely low rDS(on) Computers and Portable Battery Packs. „ High power and current handling capability „ RoHS compliant D D D D SO-8 S S S 5 4 6 3 7 2 8 1 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings -30 Units V Gate to Source Voltage ±25 V Drain Current -Continuous (Note1a) -14.5 A -75 A -Pulsed (Note1a) Power Dissipation for Single Operation PD TJ, TSTG 2.5 (Note1b) 1.2 (Note1c) 1.0 Operating and Storage Temperature W -55 to 150 °C Thermal Characteristics RTJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W RTJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking FDS6673BZ Device FDS6673BZ ©2009 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Reel Size 13’’ 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS6673BZ/D FDS6673BZ P-Channel PowerTrench® MOSFET FDS6673BZ P-Channel PowerTrench® MOSFET Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250PA, referenced to 25°C -30 V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 PA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 PA -3 V -20 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25°C 8.1 VGS = -10V , ID = -14.5A 6.5 7.8 VGS = -4.5V, ID = -12A 9.6 12 VGS = -10V, ID = -14.5A TJ = 125oC 9.7 12 VDS = -5V, ID = -14.5A 60 rDS(on) gFS Drain to Source On Resistance Forward Transconductance -1 -1.9 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz 3500 4700 pF 600 800 pF 600 900 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGS = 6: VDS = -15V, VGS = -10V, ID = -14.5A VDS = -15V, VGS = -5V, ID = -14.5A 14 26 ns 16 29 ns 225 36 105 167 ns 88 124 nC 46 65 ns nC 8 nC 23.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = 14.5A, di/dt = 100A/Ps -0.7 45 ns Qrr Reverse Recovery Charge IF = 14.5A, di/dt = 100A/Ps 34 nC Notes: 1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user’s board design. a) 50 oC/W (10 sec) when mounted on a 1 in2 pad of 2 oz copper b) 105 oC/W when mounted on a .04 in2 pad of 2 oz copper c) 125 oC/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDS6673BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 70 60 VGS = -4V 50 VGS = -10V VGS = -5V 40 VGS = -4.5V 30 VGS = -3.5V 20 VGS = -3V 10 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 4 Figure 1. On Region Characteristics VGS = -3.5V VGS = -4V VGS = -4.5V VGS = -5V VGS = -10V 20 30 40 50 60 -ID, DRAIN CURRENT(A) 70 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 25 1.5 VGS = -10V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -80 ON-RESISTANCE (m:) rDS(on), DRAIN TO SOURCE ID = -14.5A 1.4 ID = -7A PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 20 TJ = 150oC 15 10 TJ = 25oC 5 0 -40 0 40 80 120 2 160 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. Normalized On Resistance vs Junction Temperature 100 00 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX VDS = -6V 60 TJ = 150oC 40 TJ = 25oC 20 TJ = -55oC 0 2.0 2.5 3.0 10 Figure 4. On-Resistance vs Gate to Source Voltage 80 -ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 3.5 4.0 4.5 VGS = 0V 10 TJ = 150oC 1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics TJ = 25oC 0.1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.4 FDS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 6000 8 VDD = -10V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -15V 6 VDD = -20V 4 Ciss Coss 1000 Crss 2 f = 1MHz VGS = 0V 0 0 20 40 60 80 100 0.1 100 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics -IAS, AVALANCHE CURRENT(A) 100 -Ig(uA) TJ = 150oC 1 0.1 TJ = 25oC 0.01 1E-3 5 10 15 20 -VGS(V) 25 30 35 Figure 9. Ig vs VGS TJ = 25oC TJ = 125oC -1 10 0 1 2 10 10 10 tAV, TIME IN AVALANCHE(ms) 3 10 100 100Ps -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 10 Figure 10. Unclamped Inductive Switching Capability 16 12 VGS = -10V 8 VGS = -4.5V 4 10 1 1ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10s DC RTJA = 125oC/W TC = 25 C o 0 25 30 40 1 -2 10 1E-4 0 10 Figure 8. Capacitance vs Drain to Source Voltage 1000 10 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 75 100 125 0.01 0.01 150 0.1 1 10 100 500 -VDS, DRAIN to SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE(oC) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 FDS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10V 3 10 2 10 10 SINGLE PULSE RTJA = 125oC/W 1 0.5 -4 10 TA = 25oC -3 -2 10 -1 10 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 1E-3 1E-4 -4 10 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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