FDS6673BZ_F085

-30V, -14.5A, 7.8mΩ Features General Description „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state „ Extended VGS range (-25V) for battery applications resistance. „ HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in „ High performance trench technology for extremely low rDS(on) Notebook Computers and Portable Battery Packs. „ High power and current handling capability „ RoHS compliant „ Qualified to AEC Q101 D D D D SO-8 S S S 5 4 6 3 7 2 8 1 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note1a) -Pulsed Power Dissipation for Single Operation PD TJ, TSTG Ratings -30 Units V ±25 V -14.5 A -75 A (Note1a) 2.5 (Note1b) 1.2 (Note1c) 1.0 Operating and Storage Temperature W -55 to 150 °C Thermal Characteristics RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ -F085 13’’ 12mm 2500 units ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: FDS6673BZ-F085/D FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -30 V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA -3 V -20 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 8.1 VGS = -10V , ID = -14.5A 6.5 7.8 VGS = -4.5V, ID = -12A 9.6 12 VGS = -10V, ID = -14.5A TJ = 125oC 9.7 12 VDS = -5V, ID = -14.5A 60 rDS(on) gFS Drain to Source On Resistance Forward Transconductance -1 -1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz 3500 4700 pF 600 800 pF 600 900 pF 14 26 ns 16 29 ns 225 306 ns 105 167 ns 88 124 nC 46 65 Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGS = 6Ω VDS = -15V, VGS = -10V, ID = -14.5A VDS = -15V, VGS = -5V, ID = -14.5A nC 8 nC 23.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = 14.5A, di/dt = 100A/µs -0.7 45 ns Qrr Reverse Recovery Charge IF = 14.5A, di/dt = 100A/µs 34 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 50 oC/W (10 sec) when mounted on a 1 in2 pad of 2 oz copper b) 105 oC/W when mounted on a .04 in2 pad of 2 oz copper c) 125 oC/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDS6673BZ-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 70 60 VGS = - 4V 50 VGS = - 10V VGS = - 5V 40 VGS = - 4.5V 30 VGS = - 3.5V 20 VGS = - 3V 10 0 0 3 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 4 Figure 1. On Region Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -4V VGS = -4.5V VGS = -5V VGS = -10V 20 30 40 50 60 -ID, DRAIN CURRENT(A) 70 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 ID = -14.5A 1.3 rDS(on), DRAIN TO SOURCE VGS = -10V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -80 -40 0 40 80 120 ID = -7A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 ON-RESISTANCE (mΩ) 1.4 TJ = 150oC 15 10 TJ = 25oC 5 0 160 2 o TJ, JUNCTION TEMPERATURE ( C) Figure 3. Normalized On Resistance vs Junction Temperature VDS = -6V TJ = 150oC 40 TJ = 25oC 20 TJ = -55oC 0 2.0 2.5 3.0 10 100 00 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 60 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 3.5 4.0 4.5 -IS, REVERSE DRAIN CURRENT (A) 80 -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = 0V 10 1 TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics TJ = 150oC Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.4 FDS6673BZ-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 6000 8 VDD = -10V 6 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -15V VDD = -20V 4 2 0 Ciss Coss 1000 Crss f = 1MHz VGS = 0V 20 0 40 60 80 100 0.1 100 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics -IAS, AVALANCHE CURRENT(A) 100 -Ig(uA) TJ = 150oC 1 0.1 TJ = 25oC 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 10 TJ = 25oC TJ = 125oC -1 10 0 1 2 10 10 10 tAV, TIME IN AVALANCHE(ms) 3 10 Figure 10. Unclamped Inductive Switching Capability 100 16 -ID, DRAIN CURRENT (A) 100μs 12 VGS = -10V 8 VGS = -4.5V 4 10 1ms 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125oC/W 10s DC o TC = 25 C 0 25 30 40 1 -2 10 35 Figure 9. Ig vs VGS -ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 1000 10 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 75 100 125 150 0.01 0.01 0.1 1 10 100 500 -VDS, DRAIN to SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE(oC) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 FDS6673BZ-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDS6673BZ-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10V 3 10 2 10 10 SINGLE PULSE RθJA = 125oC/W TA = 25oC 1 0.5 -4 10 -3 -2 10 -1 10 10 1 2 3 10 10 10 t, PULSE WIDTH (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 1E-3 1E-4 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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