FDS2672_F085

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Other names and brands may be claimed as the property of others. 200V, 3.9A, 70mΩ General Description Features This single N-Channel MOSFET is produced using ON Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A „ Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A „ Fast switching speed Application „ High performance trench technology for extremely low rDS(on) „ DC-DC conversion „ Qualified to AEC Q101 „ RoHS compliant D D D D SO-8 S Pin 1 S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) PD TJ, TSTG Units V ±20 V 3.9 -Pulsed EAS Ratings 200 A 50 Single Pulse Avalanche Energy (Note 3) 37.5 Power Dissipation (Note 1a) 2.5 Power Dissipation (Note 1b) 1.0 Operating and Storage Temperature mJ W -55 to 150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Note 1) 25 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 °C/W Package Marking and Ordering Information Device Marking FDS2672 Device FDS2672-F085 ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Reel Size 13’’ 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS2672-F085/D FDS2672-F085 N-Channel UltraFET Trench® MOSFET FDS2672-F085 N-Channel UltraFET Trench® MOSFET Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 200 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C 206 VDS = 160V, VGS=0V 1 µA VDS = 160V, VGS=0V TJ = 55°C 10 µA ±100 nA 4 V VGS = ±20V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -11 VGS = 10V, ID = 3.9A 59 rDS(on) Drain to Source On Resistance VGS = 6V, ID = 3.5A 63 80 VGS = 10V, ID = 3.9A, TJ = 125°C 124 148 VDS = 10V,ID = 3.9A 15 gFS Forward Transcondductance 2 2.9 mV/°C 70 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 1905 2535 100 135 pF pF 30 45 pF Ω 0.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time 22 35 ns 10 20 td(off) Turn-Off Delay Time ns 35 56 tf ns Fall Time 10 20 ns Qg(TOT) Total Gate Charge at 10V 33 46 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 100V, ID = 3.9A VGS = 10V, RGEN = 6Ω VDD =100V ID = 3.9A 11 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage VGS = 0V, IS = 3.9A 0.75 1.2 V trr Reverse Recovery Time IF = 3.9A, di/dt = 100A/µs 67 101 ns Qrr Reverse Recovery Charge IF = 3.9A, di/dt = 100A/µs 179 269 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad . Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V www.onsemi.com 2 FDS2672-F085 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 10V 40 VGS = 6V 30 VGS = 5V 20 VGS = 4.5V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 6V 1.5 1.0 0.5 VGS = 10V 0 5 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 180 2.8 ID = 3.9A VGS = 10V 2.2 1.6 1.0 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = 3.9A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 140 TJ = 150oC 120 100 80 60 40 3.0 TJ = 25oC 4.5 6.0 7.5 10 9.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 25 VDD = 10V 20 TJ = 150oC TJ = 25oC 15 10 5 0 VGS = 4.5V 2.0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 4 Figure 1. On Region Characteristics ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = - 55oC 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 6 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 0.01 1E-3 0.0 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDS2672-F085 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VDD = 50V 8 VDD = 100V 6 VDD = 150V 4 2 0 0 8 16 24 Qg, GATE CHARGE(nC) 32 1000 Coss 10 0.1 TJ = 25oC 1 TJ = 125oC 3.5 3.0 VGS = 10V 2.5 2.0 VGS = 6V 1.5 1.0 0.5 0.1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1ms LIMITED BY PACKAGE -1 10 -3 10 P(PK), PEAK TRANSIENT POWER (W) 0 0.01 0.1 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25OC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 10 DC 100 75 100 125 150 Figure 10. Ambient Continuous Drain Current vs Case Temperature 100us 10 50 o 2 1 o RθJA = 50 C/W TA, AMBIENT TEMPERATURE ( C) 10 10 0.0 25 1000 Figure 9. Unclamped Inductive Switching Capability -2 100 4.0 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 10 ID, DRAIN CURRENT (A) Crss 100 40 Figure 7. Gate Charge Characteristics 10 f = 1MHz VGS = 0V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10000 10 1000 3000 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK 100 I = I25 150 – TA -----------------------125 10 SINGLE PULSE 1 -4 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area TA = 25oC VGS = 10V -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 3 10 FDS2672-F085 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1E-3 1E-4 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design www.onsemi.com 5 2 10 3 10 FDS2672-F085 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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