FDS4675-F085

40V P-Channel PowerTrench® MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Power Tranch process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V). • RDS(ON) = 0.017 Ω @ VGS = -4.5 V • • Applications • Power management • Load switch • Battery protection • • • Absolute Maximum Ratings T A Symbol -11 A, -40 V RDS(ON) = 0.013 Ω @ VGS = -10 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Qualified to AEC Q101 RoHS Compliant = 25℃ unless otherwise noted Parameter Ratings Units V DSS Drain-Source Voltage -40 V V GSS Gate-Source Voltage ±20 V ID Continuous Drain Current -11 Pulsed (Note 1a) 2.4 (steady state) PD Power Dissipation for Single Operation T J, T STG A -50 1.4 (Note 1b) 1.2 (Note 1c) A (Note 1a) W W W -55 to +150 ℃ 62.5 (steady state), 50 (10 sec) (Note 1a) ℃/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 25 (Note 1c) ℃/W (Note 1) ℃/W Package Marking and Ordering Information Dev ice Marking Dev ice Reel Size Tape w idth Quantity FDS4675 FDS4675-F085 13” 12mm 2500 units © 2017 Semiconductor Components Industries, LLC September-2017, Rev.2 Publication Order Number: FDS4675-F085/D FDS4675-F085 — 40V P-ChannelTrench® MOSFET FDS4675-F085 Symbol TA = 25℃ unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = -250 µA ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25℃ Zero Gate Voltage Drain Current V DS = -32 V , V GS = 0 V -1 µA IGSSF Gate-Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse V GS = -20 V, V DS = 0 V -100 nA -3 V -40 V -34 mV/℃ On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, ID = -250µA ∆V GS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250µA, Referenced to 25℃ 4.6 V GS = -10 V, ID = -11 A 10 13 V GS = -4.5 V, ID = -9.5 A 13 17 V GS = -10 V, ID = -11 A, T J = 125℃ 15 21 V DS = -5 V, ID = -11 A 44 S 4350 pF 622 pF 290 pF RDS(ON) g FS Static Drain-Source On-Resistance Forward Transconductance -1 -1.4 mV/℃ mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance V DS = -20 V, V GS = 0 V, f = 1 MHz Sw itching Characteristics (Note 2) td(on) tr td(off) Turn-On Delay Time Turn-On Rise Time V DD = -20 V, ID = -1 A Turn-Off Delay Time V GS = -4.5 V, RGEN = 6 Ω tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge V DS = -20 V, ID = -11 A, V GS = -4.5 V 40 64 ns 49 79 ns 100 160 ns 60 96 ns 40 56 nC 11 nC 13 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage V GS = 0 A, IS = -2.1 A (Note 2) -0.7 -2.1 A -1.2 V Notes: 1. RθJ A is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% www.onsemi.com 2 FDS4675-F085 — 40V P-ChannelTrench® MOSFET PD Electrical Characteristics Figure 1. Figure 3. Figure 5. On-Region Characteristics On-Resistance Variation w ith Tem perature Transfer Characteristics Figure 2. Figure 4. On-Resistance Variation w ith Drain Current and Gate Voltage On-Resistance Variation w ith Gate to Source Voltage Figure 6. Body Diode Forw ard Voltage Variation w ith Source Current and Tem perature www.onsemi.com 3 FDS4675-F085 — 40V P-ChannelTrench® MOSFET PD Typical Characteristics Figure 7. Figure 9. Gate Charge Characteristics Figure 8. Capacitance Characteristics Maxim um Safe Operating Area Figure 10. Single Pulse Maxim um Pow er Dissipation Figure 11. Transient Therm al Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 FDS4675-F085 — 40V P-ChannelTrench® MOSFET PD Typical Characteristics FDS4675-F085 — 40V P-ChannelTrench® MOSFET PD Physical Dimension Figure 12. 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY www.onsemi.com 5 FDS4675-F085 — 40V P-ChannelTrench® MOSFET PD ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax : 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. Amer ican Technical Support: 800-282-9855 Toll Free USA/Canada. Eur ope, Middle East and Afr ica Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Or der Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Repr esentative