FDMS6673BZ

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS6673BZ P-Channel PowerTrench® MOSFET -30 V, -82 A, 6.8 m: Features General Description The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. „ Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A „ Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A „ Advanced Package and Silicon Combination for Low r DS(on) Applications „ HBM ESD Protection Level of 8 kV Typical(Note 3) „ Load Switch in Notebook and Server „ MSL1 Robust Package Design „ Notebook Battery Pack Power Management „ RoHS Compliant D D D D G S S Pin 1 S Top D 55 44 G D 66 33 S D 7 22 S D 88 11 S Bottom Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TJ, TSTG Units V ±25 V TC = 25 °C (Note 5) -82 -Continuous TC = 100 °C -Continuous TA = 25 °C (Note 5) (Note 1a) -15.2 (Note 4) -422 -Pulsed PD Ratings -30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C -52 73 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 A W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.7 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS6673BZ Device FDMS6673BZ ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev1.7 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET May 2016 Parameter Symbol Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 PA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 PA -3.0 V -30 V -18 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -1.0 -1.8 7 mV/°C VGS = -10 V, ID = -15.2 A 5.2 6.8 VGS = -4.5 V, ID = -11.2 A 7.8 12.5 VGS = -10 V, ID = -15.2 A, TJ = 125 °C 7.5 9.8 VDS = -5 V, ID = -15.2 A 76 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15 V, VGS = 0 V, f = 1 MHz 4444 5915 pF 781 1040 pF 695 1045 pF : 4.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to -10 V Qg Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -15.2 A, VGS = -10 V, RGEN = 6 : VDD = -15 V, ID = -15.2 A 14 26 ns 28 45 ns 97 156 ns 79 127 ns 93 130 nC 52 73 nC 13 nC 26 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.1 A (Note 2) VGS = 0 V, IS = -15.2 A IF = -15.2 A, di/dt = 100 A/Ps (Note 2) 0.7 1.20 0.8 1.25 V 33 53 ns 20 32 nC Notes: 1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2: 3: 4: 5: b. 125 °C/W when mounted on a minimum pad of 2 oz copper. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. Pulsed Id please refer to Fig 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal electro-mechanical application board design. ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev1.7 2 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. 120 100 -ID, DRAIN CURRENT (A) VGS = -4.5 V 80 VGS = -4 V 60 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = -3.5 V 40 20 VGS = -3 V 0 0 1 2 3 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10 V VGS = -6 V VGS = -3 V 3.5 3.0 VGS = -4.5 V 2.0 VGS = -6 V 1.5 1.0 VGS = -10 V 0.5 4 0 20 40 60 80 100 120 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.6 25 ID = -15.2 A VGS = -10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4 V VGS = -3.5 V 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 15 5 TJ = 25 oC 2 -IS, REVERSE DRAIN CURRENT (A) VDS = -5 V 60 40 = 150 oC 20 TJ = -55 oC 0 0 1 2 3 4 200 100 8 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev1.7 6 Figure 4. On-Resistance vs. Gate to Source Voltage 80 TJ = 25 oC 4 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX TJ TJ = 125 oC 10 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 120 100 PULSE DURATION = 80 Ps ID = -15.2 A DUTY CYCLE = 0.5% MAX 20 Figure 3. Normalized On Resistance vs. Junction Temperature -ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. ID = -15.2 A 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 VDD = 10 V 6 VDD = 15 V VDD = 20 V 4 Ciss Coss 1000 2 0 0 20 40 60 80 300 0.1 100 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs. Drain to Source Voltage 100 -ID, DRAIN CURRENT (A) 50 10 TJ = 100 oC TJ = TJ = 25 oC 125 oC 80 60 VGS = 10 V VGS = 4.5 V 40 20 Limited by Package o 1 0.01 0.1 1 0 25 100 200 10 RTJC = 1.7 C/W 50 150 -4 10 -Ig, GATE LEAKAGE CURRENT (A) 100 us 1 ms 10 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W DC TA = 25 oC 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 200 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V 0.1 VGS = 0 V -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 -8 10 -9 10 1 10 100 200 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev1.7 0 Figure 12. Igss vs. Vgss 4 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. P(PK), PEAK TRANSIENT POWER (W) 2000 VGS = -10 V 1000 SINGLE PULSE RTJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 -2 10 -1 10 1 10 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o 0.001 0.0004 -4 10 RTJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Case Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev1.7 5 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. PQFN8 5X6, 1.27P CASE 483AE ISSUE A 5.10 PKG CL 8 5.10 3.91 A SEE DETAIL B B 5 1.27 8 7 6 5 0.77 4.52 PKG CL 5.85 5.65 6.15 3.75 6.61 KEEP OUT AREA 1.27 1 4 1 TOP VIEW 2 3 4 0.61 1.27 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE SEE DETAIL C 5.00 4.80 LAND PATTERN RECOMMENDATION 0.35 0.15 0.10 C 0.05 0.00 SIDE VIEW 8X 0.08 C 5.20 4.80 1.10 0.90 3.81 0.35 0.15 DETAIL C SCALE: 2:1 1.27 0.51 (8X) 0.31 (0.34) 0.10 1 2 3 C A B 4 0.76 0.51 (0.52) 6.25 5.90 3.48+0.30 -0.10 (0.50) (0.30) (2X) 8 0.20+0.10 -0.15 (8X) 7 6 3.96 3.61 BOTTOM VIEW 0.30 0.05 5 C SEATING PLANE DETAIL B SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA,. B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E. IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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