FDS6574A

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS6574A May 2008 FDS6574A tmM 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.8 V • Low gate charge Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • High power and current handling capability • RoHS Compliant D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current 16 A – Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation PD 80 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.0 –55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6574A FDS6574A 13’’ 12mm 2500 units 2008 Fairchild Semiconductor Corporation FDS6574A Rev B2(W) Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA ID = 250 µA 1.5 V On Characteristics VGS = 0 V, ID = 250 µA 20 V 10 ID = 250 µA, Referenced to 25°C mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C 0.4 0.6 –2.7 ID(on) On–State Drain Current VGS = 4.5 V, ID = 16 A VGS = 2.5 V, ID = 15 A VGS = 1.8 V, ID = 13 A VGS = 4.5 V, ID = 16 A,TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 16 A 115 S VDS = 10V, f = 1.0 MHz V GS = 0 V, 7657 pF 1432 pF 775 pF 40 4 4.4 5 5.3 mV/°C 6 7 9 9 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 19.5 35 ns 22 36 ns Turn–Off Delay Time 173 277 ns Turn–Off Fall Time 82 131 ns 75 105 nC Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 16 A, 9 nC 17 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage (Note 2) 0.56 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6574A Rev B2(W) FDS6574A Electrical Characteristics FDS6574A Typical Characteristics 2 VGS = 4.5V 2.5V ID, DRAIN CURRENT (A) 3.5V 80 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 100 1.8V 1.5V 60 40 20 0 0 0.5 1 1.5 1.8 VGS = 1.5V 1.6 1.4 1.8V 1.2 2.5V 0 20 40 60 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 ID = 16A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 8A 0.01 0.008 TA = 125oC 0.006 0.004 TA = 25oC 0.002 -50 -25 0 25 50 75 100 125 150 175 1 2 o Figure 3. On-Resistance Variation with Temperature. 100 25oC IS, REVERSE DRAIN CURRENT (A) TA = -55oC 75 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 VDS = 5V 3 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) ID, DRAIN CURRENT (A) 3.5V 0.8 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 3.0V 1 125oC 60 45 30 15 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 0.8 1.1 1.4 1.7 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6574A Rev B2(W) FDS6574A Typical Characteristics 10000 VDS = 5V ID = 16 A 10V 4 15V 3 2 6000 4000 COSS 1 2000 0 0 CRSS 0 15 30 45 60 75 90 0 Qg, GATE CHARGE (nC) 5 10 20 Figure 8. Capacitance Characteristics. 50 100 100µs RDS(ON) LIMIT 10 1 DC VGS = 4.5V SINGLE PULSE RθJA = 125oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) 1000 1ms 10ms 100ms 1s 10s TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS 8000 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) *R θJA 0.2 0.1 o R θ JA = 125 C/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - T A = P * R θ JA(t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6574A Rev B2(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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