FDS6681Z

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6681Z FDS6681Z 30 Volt P-Channel PowerTrench® MOSFET General Description Features This P-Channel MOSFET is produced using ON • –20 A, –30 V. ® Semiconductor’s advanced PowerTrench process that RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V has been especially tailored to minimize the on-state • Extended VGSS range (–25V) for battery applications resistance. • HBM ESD protection level of 8kV typical (note 3) This device is well suited for Power Management and • High performance trench technology for extremely load switching applications common in Notebook low RDS(ON) • High power and current handling capability Computers and Portable Battery Packs. • Termination is Lead-free and RoHS Compliant D D D D SO-8 S S S G Absolute Maximum Ratings Symbol VDSS 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units –30 V Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation – Continuous (Note 1a) – Pulsed V A –105 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG ±25 –20 W 1.0 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6681Z FDS6681Z 13’’ 12mm 2500 units ©2005 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDS6681Z/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS ID = –250 µA Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±10 µA µA –3 V On Characteristics VGS = 0 V, V –30 –26 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –20 A VGS = –4.5 V, ID = –17 A VGS = –10 V, ID = –20 A,TJ=125°C VDS = –5 V, ID = –20 A –1 –1.8 6 3.8 5.2 5.0 79 mV/°C 4.6 6.5 6.3 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics VDS = –15 V, V GS = 0 V, f = 1.0 MHz 7540 pF 1400 pF 1120 pF (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg(TOT) Total Gate Charge at VGS = –10V VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω VDS = –15 V, ID = –20 A 20 35 ns 9 18 ns 660 1060 ns 380 610 ns 185 260 nC 150 Qg(TOT) Total Gate Charge at VGS = –5V 105 Qgs Gate–Source Charge 26 nC Qgd Gate–Drain Charge 47 nC www.onsemi.com 2 nC FDS6681Z Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings (Note 2) tRR Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage IF = –20 A, Reverse Recovery Time QRR Reverse Recovery Charge (Note 2) IS VSD dIF/dt = 100 A/µs –0.7 –2.1 A –1.2 V 125 ns 94 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 2 1in pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 FDS6681Z Electrical Characteristics FDS6681Z Typical Characteristics 105 2.4 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 90 -ID, DRAIN CURRENT (A) -6.0V -4.5V 75 -3.5V 60 45 30 -3.0V 15 0 2 1.8 -4.0V 1.6 -4.5V 1.4 -5.0V 1.2 -6.0V -8.0V 2 0 Figure 1. On-Region Characteristics. 15 30 45 60 75 -ID, DRAIN CURRENT (A) 90 105 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.6 ID = -20A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) ID = -10A 1.4 1.2 1 0.8 0.6 0.01 0.008 TA = 125oC 0.006 0.004 o TA = 25 C 0.002 -50 -30 -10 10 30 50 70 90 110 o TJ, JUNCTION TEMPERATURE ( C) 130 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 105 1000 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 90 -ID, DRAIN CURRENT (A) -10V 1 0.8 1 1.5 0.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -3.5V 2.2 75 60 45 TA = 125oC -55oC 30 15 o 25 C 100 10 TA = 125oC 1 o 25 C 0.1 -55oC 0.01 0.001 0 1 1.25 1.5 1.75 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0 2.25 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDS6681Z Typical Characteristics 10000 f = 1MHz VGS = 0 V ID = -20A 8000 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = -10V 6 -20V 4 -15V Ciss 6000 4000 Coss 2 2000 0 0 Crss 40 0 80 120 Qg, GATE CHARGE (nC) 160 0 200 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC VGS = -10V SINGLE PULSE RθJA = 125oC/W o TA = 25 C 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 30 50 100us 0.1 10 15 20 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 1000 100 5 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com