FDS6690A

FDS6690A FDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 11 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.0 – Continuous – Pulsed 50 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) W 96 mJ –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690A FDS6690A 13’’ 12mm 2500 units © 2007 Semiconductor Components Industries, LLC. October-2017, Rev. 5 Publication Order Number: FDS6690A/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA 30 ID = 250 µA, Referenced to 25°C VDS = 24 V, V 25 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS VGS = ±20 V, Gate–Body Leakage On Characteristics VDS = 0 V mV/°C 1 µA 10 µA ±100 nA 3 V (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 11 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 1.9 –5 VGS = 10 V, ID = 11 A ID = 10 A VGS = 4.5 V, VGS= 10 V, ID = 11 A, TJ=125°C 9.8 12.0 13.7 mV/°C 12.5 17.0 22.0 50 mΩ A 48 S 1205 pF 290 pF 115 pF 2.4 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 15 mV, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 28 44 ns tf Turn–Off Fall Time 9 19 ns 12 16 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 11 A, 9 19 ns 5 10 ns nC 3.4 nC 4.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 11 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge 2.1 0.74 1.2 A V 24 nS 27 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2 Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 8A, VDD = 30V, VGS = 10V www.onsemi.com 2 FDS6690A Electrical Characteristics FDS6690A Typical Characteristics 50 3 VGS = 10V 6.0V 3.5.V 4.5V 30 20 3.0V 10 VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 2.5 2 3.5V 1.5 4.5V 10V 0.5 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.05 ID = 11.0A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1 0 1.4 1.2 1 0.8 ID = 5.5A 0.04 0.03 o -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 TA = 125 C 0.02 o TA = 25 C 0.01 0.6 0 175 2 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 30 20 o TA = 125 C 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 ID, DRAIN CURRENT (A) 4.0V o 25 C 10 o -55 C VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 0.01 o -55 C 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. Transfer Characteristics. 0 4 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS6690A Typical Characteristics 10 1600 VGS, GATE-SOURCE VOLTAGE (V) ID = 11.0A VDS = 10V f = 1MHz VGS = 0 V 15V CAPACITANCE (pF) 8 20V 6 4 2 1200 Ciss 800 Coss 400 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100ms 1s 10s 1 0.1 DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W o TA = 25 C 0.01 0.01 30 100
1ms 10ms IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 100 5 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 10 Tj=25 Tj=125 1 0.01 100   0.1 1 10 100 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE R θJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 t 1 , TIME (sec) 1 Figure 11. Single Pulse Maximum Power Dissipation. www.onsemi.com 4 10 100 FDS6690A Typical Characteristic r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA (t) = r(t) * R θJA /W R θJA = 125 0.2  0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com