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tm
FDS6690AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
•
10 A, 30 V.
RDS(ON) max= 12 mΩ @ VGS = 10 V
RDS(ON) max= 15 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky diode
•
Low gate charge (16nC typical)
•
High performance trench technology for extremely low
RDS(ON)
Applications
•
High power and current handling capability
• DC/DC converter
• Low side notebooks
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
10
A
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690AS
FDS6690AS
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6690AS Rev A2(X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
May 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
ID = 10 mA, Referenced to 25°C
V
30
mV/°C
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 1 mA
1
1.6
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 10 A
45
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
910
pF
270
pF
100
pF
Ω
ID = 10 mA, Referenced to 25°C
–4
VGS = 10 V,
ID = 10 A
VGS = 4.5 V,
ID = 8.5 A
VGS=10 V, ID =10A, TJ=125°C
10
12
15
mV/°C
12
15
19
50
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
VGS = 15 mV,
f = 1.0 MHz
2.0
8
16
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
5
10
ns
(Note 2)
25
40
ns
6
12
ns
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
15
27
ns
tf
Turn–Off Fall Time
8
16
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
16
23
nC
9
13
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
11
20
ns
11
20
ns
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
2.3
nC
Qgd
Gate–Drain Charge
3.0
nC
VDD = 15 V,
ID = 10 A
nC
FDS6690AS Rev A2 (X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
3.5
A
0.7
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
IF = 10A,
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
VGS = 0 V,
IS = 3.5 A
(Note 2)
(Note 3)
0.6
16
nS
9
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6690AS Rev A2 (X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
2.2
50
VGS = 10V
VGS = 4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
ID, DRAIN CURRENT (A)
40
6.0V
4.5V
30
3.0V
20
10
2.5V
1.8
3.5V
1.4
4.5V
0
6.0V
10V
1
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
1.6
ID = 10A
VGS = 10V
1.45
ID = 5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0V
0.6
0
1.3
1.15
1
0.85
0.7
0.05
0.04
0.03
o
TA = 125 C
0.02
0.01
TA = 25oC
0
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
50
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
40
30
20
o
TA = 125 C
o
-55 C
10
25oC
0
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690AS Rev A2 (X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
1400
f = 1MHz
VGS = 0 V
ID =10A
1200
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
1000
Ciss
800
600
Coss
400
200
Crss
0
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
18
0
21
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µs
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690AS Rev A2(X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1
3A/DIV
Fairchild’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
3A/DIV
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
0V
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
FDS6690AS Rev A2(X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
L
VDS
BVDSS
tP
VGS
RGE
+
DUT
VGS
VDS
IAS
VDD
VDD
-
0V
tp
vary tP to obtain
required peak IAS
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Drain Current
Same type as
50kΩ
+10V
F
-
10µ
+
1µF
VDD
-
VGS
QG(TOT)
10V
DUT
QGD
QGS
VGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
VDS
tON
td(ON)
RL
VDS
tr
90%
tOFF
td(OFF
tf
)
90%
+
VGS
RGEN
Figure 18. Gate Charge Waveform
VDD
DUT
VGSPulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
Figure 19. Switching Time Test
Circuit
-
10%
0V
90%
VGS
0V
10%
50%
10%
50%
Pulse Width
Figure 20. Switching Time Waveforms
FDS6690AS Rev A2(X)
FDS6690AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
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subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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™
®
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
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QFET®
QS™
Quiet Series™
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Saving our world 1mW at a time™
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SuperMOS™
®
The Power Franchise®
tm
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TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
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Ultra FRFET™
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VCX™
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tm
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS6690AS Rev.A2(X)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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