FDS6900AS

MOSFET – Dual N-Channel, POWERTRENCH), SyncFETt FDS6900AS General Description The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. Features • Q2: Optimized to Minimize Conduction Losses Includes SyncFET • • • Schottky Body Diode, 8.2 A, 30 V ♦ RDS(on) = 22 mW at VGS = 10 V ♦ RDS(on) = 28 mW at VGS = 4.5 V Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V ♦ RDS(on) = 27 mW at VGS = 10 V ♦ RDS(on) = 34 mW at VGS = 4.5 V 100% RG (Gate Resistance) Tested These Devices are Pb−Free and are RoHS Compliant www.onsemi.com S1D2 S1D2 S1D2 G1 S2 G2 D1 Pin 1 D1 SOIC8 CASE 751EB ELECTRICAL CONNECTION 1 8 Q1 2 7 3 6 Q2 4 5 Dual N−Channel SyncFet MARKING DIAGRAM Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q2 Q1 Units VDSS Drain−Source Voltage 30 30 V VGSS Gate−Source Voltage ±20 ±20 V Drain Current − Continuous (Note 1a) − Pulsed 8.2 30 6.9 20 ID PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range A June, 2020 − Rev. 3 FDS6900AS A L YW = Specific Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week W 2 ORDERING INFORMATION 1.6 1 0.9 Device °C −55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 FDS6900AS ALYW 1 FDS6900AS Package Shipping† SOIC8 (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDS6900AS/D FDS6900AS THERMAL CHARACTERISTICS Symbol Ratings Units RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) Parameter 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 40 °C/W Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min 30 30 Typ Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ID = 250 mA, VGS = 0 V Q2 Q1 DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C ID = 250 mA, referenced to 25°C Q2 Q1 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q2 Q1 500 1 mA IGSS Gate−Body Leakage Current VGS = ±20 V, VDS = 0 V Q2 Q1 ±100 nA 3 3 V BVDSS V 27 22 mV/°C ON CHARACTERISTICS (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA VGS = VDS, ID = 250 mA Q2 Q1 DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C ID = 250 mA, referenced to 25°C Q2 Q1 −3.2 −4.2 Static Drain−Source On−Resistance VGS = 10 V, ID = 8.2 A VGS = 10 V, ID = 8.2 A, TJ = 125°C VGS = 4.5 V, ID = 7.6 A Q2 17 23 21 22 36 28 VGS = 10 V, ID = 6.9 A VGS = 10 V, ID = 6.9 A, TJ = 125°C VGS = 4.5 V, ID = 6.2 A Q1 22 30 27 27 38 34 On−State Drain Current VGS = 10 V, VDS = 5 V Q2 Q1 Forward Transconductance VDS = 5 V, ID = 8.2 A VDS = 5 V, ID = 6.9 A Q2 Q1 25 21 S VDS = 15 V, VGS = 0 V, f = 1 MHz Q2 Q1 570 600 pF RDS(on) ID(on) gFS 1 1 1.9 1.9 mV/°C 30 20 mW A DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Q2 Q1 180 150 pF Crss Reverse Transfer Capacitance Q2 Q1 70 70 pF RG Gate Resistance Q2 Q1 2.8 2.2 4.9 3.8 W Q2 Q1 10 9 19 18 ns SWITCHING CHARACTERISTICS (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 W td(on) Turn−On Delay Time tr Turn−On Rise Time Q2 Q1 5 4 10 8 ns td(off) Turn−Off Delay Time Q2 Q1 26 23 42 32 ns Turn−Off Fall Time Q2 Q1 3 3 6 6 ns tf www.onsemi.com 2 FDS6900AS Table 1. ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units Q2 Q1 11 10 20 19 ns SWITCHING CHARACTERISTICS (Note 2) VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 W td(on) Turn−On Delay Time tr Turn−On Rise Time Q2 Q1 15 9 27 18 ns td(off) Turn−Off Delay Time Q2 Q1 16 14 29 25 ns Turn−Off Fall Time Q2 Q1 6 4 12 8 ns Q2 Q1 10 11 15 15 nC 8.2 8.5 nC tf Q2: VDS = 15 V, ID = 8.2 A Q1: VDS = 15 V, ID = 6.9 A Qg(TOT) Total Gate Charge at VGS = 10 V Qg Total Gate Charge at VGS = 5 V Q2 Q1 5.8 6.1 Qgs Gate−Source Charge Q2 Q1 1.6 1.7 nC Qgd Gate−Drain Charge Q2 Q1 2.1 2.2 nC DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain−Source Diode Forward Current Trr Reverse Recovery Time Qrr Reverse Recovery Charge Trr Reverse Recovery Time Qrr Reverse Recovery Charge VSD Q2 Q1 IF = 8.2 A, diF/dt = 300 A/ms (Note 3) IF = 6.9 A, diF/dt = 100 A/ms (Note 3) Drain−Source Diode Forward Voltage VGS = 0V, IS = 2.3 A (Note 2) VGS = 0V, IS = 5 A (Note 2) VGS = 0V, IS = 1.3 A (Note 2) Q2 Q1 Q2 Q2 Q1 2.3 1.3 A 15 ns 6 nC 19 ns 10 nC 0.6 0.7 0.7 0.7 1.0 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper. b. 125°C/W when c. 135°C/W when mounted on a 0.02 in2 pad of 2 oz copper. mounted on a minimum pad 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below. www.onsemi.com 3 FDS6900AS TYPICAL CHARACTERISTICS: Q2 2.4 30 4.0V 6.0V VGS = 3.0V 3.5V RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 20 3.0V 10 2.2 2 1.8 1.6 4.5V 5.0V 6.0V 10V 1 0.8 0 0.5 1 1.5 2 2.5 VDS, DRAIN−SOURCE VOLTAGE (V) 3 0 Figure 1. On−Region Characteristics 10 15 20 ID, DRAIN CURRENT(A) 25 30 0.06 ID = 8.2A VGS = 10V RDS(ON) , ON−RESISTANCE (OHM) ID = 4A 1.4 1.2 1 0.8 0.6 0.05 0.04 o TA = 125 C 0.03 0.02 o TA = 25 C 0.01 −50 −25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On−Resistance Variation with Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On−Resistance Variation with Gate−to−Source Voltage 30 100 VGS = 0V VDS = 5V IS, REVERSE DRAIN CURRENT (A) 25 ID, DRAIN CURRENT (A) 5 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1.6 RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE 4.0V 1.2 2.5V 0 3.5V 1.4 20 15 o TA = 125 C 10 o −55 C 5 o 25 C 10 o 1 TA = 125 C o 0.1 25 C o −55 C 0.01 0.001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 4 Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 4 FDS6900AS TYPICAL CHARACTERISTICS: Q2 (Continued) 800 ID =8.2A f = 1MHz VGS = 0 V 8 600 VDS = 10V CAPACITANCE (pF) VGS, GATE−SOURCE VOLTAGE (V) 10 20V 6 15V 4 Ciss 400 Coss 200 2 Crss 0 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100μs 1ms 10ms 100ms 10 1s 1 10s DC VGS = 10V SINGLE PULSE o RqJA = 135 C/W 0.1 o TA = 25 C 0.1 1 10 VDS, DRAIN−SOURCE VOLTAGE (V) SINGLE PULSE RqJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 100 Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 135 °C/W 0.2 0.1 0.1 0.05 P(p k ) 0.02 t1 0.01 t2 0.01 TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 1000 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 FDS6900AS TYPICAL CHARACTERISTICS: Q1 2.2 20 VGS = 10V RDS(ON) , NORMALIZED DRAIN−SOURCE ON−RESISTANCE 4.0V 16 ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V 6.0V 4.5V 12 8 3.0V 4 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2.5V 0 0.8 0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. On−Region Characteristics 16 20 0.07 ID = 6.9A VGS = 10V RDS(ON), ON−RESISTANCE (OHM) ID = 3.5A 1.4 1.2 1 0.8 0.06 0.05 o TA = 125 C 0.04 0.03 o TA = 25 C 0.6 0.02 −50 −25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 14. On−Resistance Variation with Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 15. On−Resistance Variation with Gate−to−Source Voltage 100 20 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) 8 12 ID, DRAIN CURRENT (A) Figure 13. On−Resistance Variation with Drain Current and Gate Voltage 1.6 RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE 4 0 2 12 8 o TA = 125 C o −55 C 4 o 25 C 0 10 o TA = 125 C 1 o 25 C 0.1 o −55 C 0.01 0.001 0.0001 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 Figure 16. Transfer Characteristics 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE(V) 1.2 Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 6 FDS6900AS TYPICAL CHARACTERISTICS: Q1 (Continued) 800 ID = 6.9A f = 1 MHz VGS = 0 V 8 VDS = 10V CAPACITANCE (pF) VGS, GATE−SOURCE VOLTAGE (V) 10 20V 6 15V 4 600 Ciss 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 Figure 18. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 19. Capacitance Characteristics 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100μs 10 1ms 10ms 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE o RqJA = 135 C/W 0.1 o TA = 25 C 0.1 1 10 VDS, DRAIN−SOURCE VOLTAGE (V) SINGLE PULSE RqJA = 135°C/W TA = 25°C 40 30 20 10 0.01 0 0.001 100 Figure 20. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 21. Single Pulse Maximum Power Dissipation 1 D = 0.5 RqJA(t) = r(t) * RqJA o 0.2 0.1 RqJA = 135 C/W 0.1 P(p k ) 0.05 t1 0.02 0.01 t2 0.01 TJ − TA = P * R qJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 1000 0.1 1 10 t1, TIME (sec) Figure 22. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 7 100 1000 FDS6900AS TYPICAL CHARACTERISTICS (Continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Current: 1.6A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6900AS. 0.01 125oC 0.001 100oC 0.0001 0.00001 25 oC 0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 25. SyncFET Body Diode Reverse Leakage versus Drain−Source Voltage and Temperature Time: 10nS/DIV Figure 23. FDS6900AS SyncFET Body Diode Reverse Recovery Characteristics Current: 1.6A/DIV For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690). Time: 10nS/DIV Figure 24. Non−SyncFET (FDS6690) Body Diode Reverse Recovery Characteristics www.onsemi.com 8 FDS6900AS TYPICAL CHARACTERISTICS (Continued) L VDS BVDSS tP VGS RGE DUT VGS VDS IAS + VDD VDD − 0V IAS tp vary t P to obtain required peak I AS 0.01Ω tAV Figure 26. Unclamped Inductive Load Test Circuit Figure 27. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V − 10 mF + 1 mF VDD QG(TOT) − VGS 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit VDS Figure 29. Gate Charge Waveform tON td(ON) RL VDS RGEN VDD DUT − 10% 0V VGS 0V Figure 30. Switching Time Test Circuit 90% 10% 90% VGS Pulse Width v 1 ms Duty Cycle v 0.1% tr 90% + VGS tOFF td(OFF) tf 50% 10% 50% Pulse Width Figure 31. Switching Time Waveform POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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