FDS6961A_F011

April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SuperSOTTM -6 SOT-23 SuperSOTTM -8 D2 D1 D2 S FD 1A 6 69 D1 S2 SO-8 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage S1 Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SO-8 SOIC-16 SOT-223 5 4 6 3 7 2 8 1 G2 G1 TA = 25oC unless other wise noted VGSS Gate-Source Voltage ID Drain Current - Continuous PD Power Dissipation for Single Operation (Note 1a) - Pulsed Power Dissipation for Single Operation Ratings Units 30 V ±20 V 3.5 A 14 (Note 1) 2 (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ,TSTG 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Operating and Storage Temperature Range W 0.9 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1999 Fairchild Semiconductor Corporation FDS6961A Rev.C Electrical Characteristics Symbol ( TA = 25 OC unless otherwise noted ) Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV/oC 25 TJ = 55°C 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 3.5 A 1.8 3 TJ =125°C VGS = 4.5 V, I D = 2.8 A V mV/oC -5 0.076 0.09 0.11 0.155 0.107 0.14 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 14 A gFS Forward Transconductance VDS = 15 V, I D = 3.5 A 6 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 220 pF 50 pF 20 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS = 15 V, I D = 1 A 3 6 ns tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 11 22 ns tD(off) Turn - Off Delay Time 7 14 ns tf Turn - Off Fall Time 3 6 ns Qg Total Gate Charge VDS = 15 V, I D = 3.5 A, 2.1 4 nC Qgs Gate-Source Charge VGS = 5 V 0.8 nC Qgd Gate-Drain Charge 0.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS6961A Rev.C Typical Electrical Characteristics 2.5 12 R DS(ON) , NORMALIZED VGS = 10V 6.0V 4.5V 9 4.0V 6 3.5V 3 3.0V DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 15 V GS = 3.5V 2 4.0 V 4.5 V 1.5 5.0V 6.0V 10V 1 0.5 0 0 1 2 3 4 0 5 3 6 R DS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 3.5A VGS = 10V 1.2 1 0.8 I D = 3.5A 0.24 0.18 125°C 0.12 0 -25 0 25 50 75 100 125 25°C 0.06 150 2 4 Figure 3. On-Resistance Variation Temperature. 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) with Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 8 IS , REVERSE DRAIN CURRENT (A) TJ = -55°C VDS =5.0V I D , DRAIN CURRENT (A) 15 0.3 1.6 0.6 -50 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.4 9 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 25°C 6 125°C 4 2 0 1 2 V GS 3 4 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6961A Rev.C Typical Electrical Characteristics 500 I D = 3.5A VDS = 5V 8 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 10V 15V 6 4 100 Coss 50 f = 1 MHz VGS = 0 V 20 2 0 C iss 200 10 0.1 0 1 2 3 4 0.2 Crss 0.5 1 2 5 10 30 V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 30 5 1m s 2 1 0.5 10s DC VGS =10V SINGLE PULSE RθJA = 135°C/W A TA = 25°C 0.1 0.05 0.01 0.1 0.2 SINGLE PULSE RθJA =135 °C/W TA = 25°C 25 10m s 100 ms 1s POWER (W) I D , DRAIN CURRENT (A) 10 30 100 us IT LIM N) S(O RD 20 15 10 5 0.5 1 2 5 10 30 0 0.01 50 0.1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 10 50 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =135° C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDS6961A Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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