FDS6982S
Dual Notebook Power Supply N-Channel PowerTrench SyncFet™
General Description
Features
The FDS6982S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6982S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
RDS(on) = 0.016Ω=@ VGS = 10V
8.6A, 30V
RDS(on) = 0.022Ω=@ VGS = 4.5V
•
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Q1:
Optimized for low switching losses
Low Gate Charge ( 8.5 nC typical)
RDS(on) = 0.028Ω=@ VGS = 10V
6.3A, 30V
RDS(on) = 0.035Ω=@ VGS = 4.5V
D1
5
D1
D2
4
6
D2
3
Q1
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
Q2
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
PD
(Note 1a)
Q1
Units
30
30
±20
8.6
30
±20
6.3
20
V
V
A
2
1.6
1
0.9
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
2
Q2
Operating and Storage Junction Temperature Range
W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6982S
FDS6982S
13”
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS6982S Rev C(W)
FDS6982S
September 2000
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
IGSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
∆BVDSS
===∆TJ
IDSS
On Characteristics
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
Q2
Q1
Q2
Q1
Q2
Q1
All
30
30
V
20
26
All
mV/°C
500
1
100
nA
-100
nA
3
3
V
µA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
===∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 8.6 A
VGS = 10 V, ID = 8.6 A, TJ = 125°C
VGS = 4.5 V, ID = 7.5 A
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 8.6 A
VDS = 5 V, ID = 6.3 A
Q2
Q1
Q2
Q1
Q2
1
1
-3.5
-5
0.013
0.020
0.017
0.021
0.038
0.028
Q1
Q2
Q1
Q2
Q1
30
20
mV/°C
0.016
0.027
0.022
0.028
0.047
0.035
Ω
A
38
18
S
2040
815
615
186
216
66
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
pF
pF
FDS6982S Rev C (W)
FDS6982S
Electrical Characteristics
Electrical Characteristics
Symbol
(continued)
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
VDS = 15 V, ID = 11.5 A, VGS = 5 V
Q1
VDS = 15 V, ID = 6.3 A, VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
10
10
14
34
21
14
7
17.5
8.5
6.3
2.4
5.4
3.1
18
18
18
25
55
34
23
14
25
12
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
tRR
Reverse Recovery Time
QRR
VSD
IF = 11.5A,
diF/dt = 300 A/µs
Reverse Recovery Charge
Drain-Source Diode Forward VGS = 0 V, IS = 3 A
VGS = 0 V, IS = 6 A
Voltage
VGS = 0 V, IS = 1.3 A
Q2
Q1
Q2
20
ns
Q2
Q2
Q1
19.7
0.42
0.56
0.70
nC
V
(Note 3)
(Note 2)
(Note 2)
(Note 2)
3.0
1.3
.7
A
1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6982S Rev C (W)
FDS6982S
Typical Characteristics: Q2
2.5
50
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
6.0V
4.5V
40
5.0V
4.0V
30
3.5V
20
10
3.0V
2
VGS = 3.0V
1.5
3.5V
4.0V
6.0V
10V
0.5
0
0
0.5
1
1.5
2
0
2.5
10
Figure 1. On-Region Characteristics.
30
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
2
ID = 11.5A
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
ID = 11.5 A
0.035
0.03
0.025
TA = 125oC
0.02
0.015
TA = 25oC
0.01
150
2
o
4
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
4.5V
1
o
TA = -55 C
o
25 C
40
100o
30
20
10
VGS = 0V
1
TA = 100oC
25oC
-55oC
0.1
0.01
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982S Rev C (W)
FDS6982S
Typical Characteristics: Q2
3000
ID = 11.5A
VDS = 5V
10V
8
f = 1MHz
VGS = 0 V
2500
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
CISS
2000
1500
1000
COSS
500
CRSS
0
0
0
10
20
30
0
40
5
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
100
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µs
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6982S Rev C (W)
FDS6982S
Typical Characteristics Q1
2
40
VGS = 10V
6.0V
4.5V
4.0V
30
1.8
3.5V
20
1.6
VGS = 3.5V
1.4
4.0V
4.5V
5.0V
1.2
6.0V
3.0V
10
10V
1
2.5V
0.8
0
0
1
2
3
0
4
10
Figure 11. On-Region Characteristics.
1.6
20
30
40
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
ID = 6.3A
VGS = 10V
ID = 3.5A
1.4
0.06
1.2
o
TA = 125 C
0.04
1
o
TA = 25 C
0.02
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
VGS = 0V
o
TA = -55 C
VDS = 5V
o
25 C
10
o
125 C
30
o
TA = 125 C
1
o
25 C
0.1
20
o
-55 C
0.01
10
0.001
0.0001
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
6
0
0.4
0.8
1.2
1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982S Rev C (W)
FDS6982S
Typical Characteristics Q1
10
1200
ID = 6.3A
VDS = 5V
8
10V
f = 1MHz
VGS = 0 V
1000
15V
800
CISS
6
600
4
400
2
200
0
COSS
CRSS
0
0
4
8
12
16
0
5
Qg, GATE CHARGE (nC)
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
30
100
SINGLE PULSE
100µs
1ms
RDS(ON) LIMIT
10
1
DC
o
TA = 25 C
10ms
100ms
1s
10s
20
15
10
VGS = 10V
SINGLE PULSE
0.1
o
RθJA = 135 C/W
25
o
5
RθJA = 135 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
r(t) , NO RMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
0.02
0.01
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
0.1
0.05
P(pk)
0.02
0.01
t1
Single Pulse
0.005
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
t2
TJ - T A = P * R θJA(t)
0.001
0.01
0.1
t 1, TIME (s ec)
1
10
100
300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6982S Rev C (W)
FDS6982S
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
0
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
Current: 3A/div
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6982S.
0.1
0.01
100oC
0.001
25oC
0.0001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
10nS/div
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Figure 12. FDS6982S SyncFET body diode
reverse recovery characteristic.
Current: 3A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6982).
0
10nS/div
Figure 13. Non-SyncFET (FDS6982) body
diode reverse recovery characteristic.
FDS6982S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1