FDS8449

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 40 V, 7.6 A, 29 mW SOIC8 CASE 751EB FDS8449, FDS8449-G General Description These N−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. D 5 4 G D 6 3 S D 7 2 S D 8 1 S Features • 7.6 A, 40 V • • RDS(on) = 29 mW @ VGS = 10 V RDS(on) = 36 mW @ VGS = 4.5 V High Power Handling Capability in a Widely Used Surface Mount Package Pb−Free, Halide Free and RoHS Compliant MARKING DIAGRAM FDS8449 ALYW $Y&Z&2&K FDS 8449 FDS8449 FDS8449−G ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Ratings Unit VDSS Drain to Source Voltage Parameter 40 V VGSS Gate to Source Voltage ±20 V ID Drain Current − Continuous (Note 1a) − Pulsed 7.6 50 PD Power Dissipation for Single Operation (Note 1a) (Note 1b) 2.5 1 Symbol TJ, TSTG Operating and Storage Junction Temperature Range A W −55 to +150 FDS8449 A L YW $Y &Z &2 &K °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. = Specific Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week = onsemi Logo = Assembly Plant Code = 2−Digit Code Format = 2−Digits Lot Run Traceability Code ORDERING INFORMATION Package Shipping† FDS8449 SOIC8 (Pb−Free/ Halide Free) 2500 / Tape & Reel FDS8449−G SOIC8 (Pb−Free/ Halide Free) 2500 / Tape & Reel Device THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W RqJA Thermal Resistance, Junction to Ambient (Note 1b) 125 °C/W RqJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W © Semiconductor Components Industries, LLC, 2005 March, 2022 − Rev. 3 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDS8449/D FDS8449, FDS8449−G ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit − − 27 mJ − 7.3 − A DRAIN−SOURCE AVALANCHE RATINGS (Note 3) EAS Drain to Source Avalanche Energy IAS Drain to Source Avalanche Current VDD = 40 V, ID = 7.3 A, L = 1 mH OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 40 − − V DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 34 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V − − 1 mA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V − − ±100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 1 1.9 3 V DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − −5 − mV/°C Static Drain to Source On–Resistance ID = 7.6 A, VGS = 10 V, − 21 29 mW ID = 6.8 A, VGS = 4.5 V − 26 36 ID = 7.6 A, VGS = 10 V, TJ = 125°C − 29 43 VDS = 10 V, ID = 7.6 A − 21 − S VDS = 20 V, VGS = 0 V, f = 1.0 MHz − 760 − pF − 100 − − 60 − f = 1.0 MHz − 1.2 − W VDD = 20 V, ID = 1 A, VGS = 10 V, RGS = 6 W − 9 18 ns DT J RDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time − 5 10 td(off) Turn–Off Delay Time − 23 17 tf Turn–Off Fall Time − 3 6 − 7.7 11 − 2.4 − − 2.8 − Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, ID = 7.6 A, VGS = 5 V nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Drain to Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) − 0.76 1.2 V trr Diode Reverse Recovery Time IF = 7.6 A, dIF/dt = 100 A/ms − 17 − ns Qrr Diode Reverse Recovery Charge − 7 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 125°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 3. BV(avalanche) Single−Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. www.onsemi.com 2 FDS8449, FDS8449−G 20 VGS = 10 V 4.0 V RDS(ON), Normalized Drain to Source On−Resistance TYPICAL CHARACTERISTICS 3.5 V ID, Drain Current (A) 16 6.0 V 12 4.5 V 8 3.0 V 4 0 1.6 0.5 1 1.5 2 2.5 2.2 1.8 3.5 V 1.4 4.0 V 0.6 0 4 16 20 0.06 0.05 0.04 TA = 125°C 0.03 TA = 25°C 0.02 0.01 −25 0 25 50 75 100 125 150 2 4 100 IS, Reverse Drain Current (A) 15 10 TA = 125°C −55°C 5 25°C 2 2.5 10 8 Figure 4. On−Resistance Variation with Gate−to−Source Voltage VDS = 10 V 1.5 6 VGS, Gate to Source Voltage (V) Figure 3. On−Resistance Variation with Temperature ID, Drain Current (A) 12 10 V ID = 3.5 A TJ, Junction Temperature (°C) 1 8 0.07 0.8 0 6.0 V Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1 20 4.5 V 1 Figure 1. On Region Characteristics 1.2 0.6 −50 2.6 ID, Drain Current (A) ID = 7.6 A VGS = −10 V 1.4 VGS = 3.0 V VDS, Drain to Source Voltage (V) RDS(on), On−Resistance (W) RDS(ON), Normalized Drain to Source On−Resistance 0 3 3 10 TA = 125°C 1 0.1 25°C 0.01 −55°C 0.001 0.0001 3.5 VGS = 0 V 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) VGS, Gate to Source Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDS8449, FDS8449−G TYPICAL CHARACTERISTICS (continued) 1000 ID = 7.6 A VDS = 10 V 8 30 V 6 20 V 4 f = 1 MHz VGS = 0 V 800 Capacitance (pF) VGS, Gate−Source Voltage (V) 10 Ciss 600 400 200 2 0 0 8 4 12 0 16 Coss Crss 5 0 Qg, Gate Charge (nC) 20 25 100 ms 1 ms 10 ms 100 ms 10 1s 10 s DC 1 0.01 0.1 VGS = 10 V Single Pulse RqJA = 125°C/W TA = 25°C 1 10 40 30 20 10 0.01 0.1 1 10 100 1000 VDS, Drain−Source Voltage (V) t1, Time (s) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 50 100 Single Pulse RqJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 40 Single Pulse RqJA = 125°C/W TA = 25°C 0 0.001 100 I(AS), Avalanche Current (A) 0.1 P(pk), Peak Transient Power (W) 50 RDS(ON) LIMIT 35 30 Figure 8. Capacitance Characteristics 100 ID, Drain Current (A) 15 VDS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics I(pk), Peak Transient Current (A) 10 0.01 0.1 1 10 100 10 1 0.01 1000 t1, Time (s) TJ = 25°C 0.1 1 10 tAV, Time in Avalanche (ms) Figure 12. Unclamped Inductive Switching Capability Figure 11. Single Pulse Maximum Peak Current www.onsemi.com 4 FDS8449, FDS8449−G TYPICAL CHARACTERISTICS (continued) r(t), Normalized Effective Transient Thermal Resistance 1 D = 0.5 0.2 0.1 RqJA(t) = r(t) × RqJA RqJA = 125°C/W 0.1 0.05 0.01 0.001 0.0001 PDM 0.02 0.01 t1 t2 TJ − TA = P × RqJA(t) Duty Factor D = t1 / t2 Single Pulse 0.001 0.01 0.1 1 10 100 1000 t1, Time (s) Figure 13. Transient Thermal Response Curve NOTE: Transient thermal response will change depending on the circuit board design. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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