FDS8449-F085

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Other names and brands may be claimed as the property of others. FDS8449-F085 N-Channel PowerTrench® MOSFET FDS8449-F085 ® N-Channel PowerTrench MOSFET 40V, 7.6A, 29mΩ Features  Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A  Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A  Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A  RoHS Compliant  Qualified to AEC Q101 Applications  Inverter  Power Supplies MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 7.6 Pulsed 50 Single Pulse Avalanche Energy (Note 1) A 27 mJ Power Dissipation 5 W Derate above 25oC 0.04 W/oC -55 to +150 oC RJC Thermal Resistance Junction to Case 25 oC/W RJA Thermal Resistance Junction to Ambient, 1in2 copper pad area 50 oC/W TJ, TSTG Operating and Storage Temperature Package Marking and Ordering Information Device Marking FDS8449 Device FDS8449-F085 Package SO-8 Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V. 2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: FDS8449-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250A, VGS = 0V 40 - - V - - 1 - - 250 A VGS = ±20V - - ±100 VGS = VDS, ID = 250A 1 1.9 3 ID = 7.6A, VGS= 10V - 21 29 VDS = 32V, VGS = 0V TA = 150oC nA On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance ID = 6.8A, VGS= 4.5V - 26 36 ID = 7.6A, VGS= 10V TJ = 125oC - 29 43 VDS= 10V, ID = 7.6A - 21 - V m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance f = 1MHz Qg(TOT) Total Gate Charge at 10V VGS = 0 to 5V - Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 20V, VGS = 0V, f = 1MHz VDD = 20V ID = 7.6A - 760 - pF - 100 - pF - 60 - pF - 1.2 -  7.7 11 nC - 2.4 - nC - 2.8 - nC Switching Characteristics ton Turn-On Time - - 21 ns td(on) Turn-On Delay Time - 9 - ns tr Rise Time - 5 - ns td(off) Turn-Off Delay Time - 23 - ns tf Fall Time - 3 - ns toff Turn-Off Time - - 39 ns - 0.76 1.2 V - 17 - ns - 7 - nC VDD = 20V, ID = 1A VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 2.1A ISD = 7.6A, dISD/dt = 100A/s www.onsemi.com 2 FDS8449-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-toSource Voltage Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDS8449-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability www.onsemi.com 4 FDS8449-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 13. Transient Thermal Response Curve www.onsemi.com 5 FDS8449-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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