FDS86240

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. „ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A Applications „ High Performance Trench Technology for Extremely Low rDS(on) „ DC/DC Converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ Primary Switch for 24 V and 48 V Systems „ 100% UIL Tested „ High Voltage Synchronous Rectifier „ RoHS Compliant D D D D G D 5 4 D 6 3 S D 7 2 S D 8 1 S G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Ratings 150 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 7.5 ID Parameter -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 4) 199 (Note 3) 220 Power Dissipation TC = 25 °C (Note 1) 5.0 Power Dissipation TA = 25 °C (Note 1a) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS86240 Device FDS86240 Package SO-8 Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.2 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units Publication Order Number: FDS86240/D 1 FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 105 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 7.5 A 17.3 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 6.4 A 19.7 26 VGS = 10 V, ID = 7.5 A, TJ = 125 °C 30.8 35.3 gFS Forward Transconductance 2 VDS = 10 V, ID = 7.5 A 2.7 -11 mV/°C 19.8 26 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 1930 2570 pF 198 265 pF 8.3 15 pF Ω 0.84 Switching Characteristics td(on) Turn-On Delay Time 14 26 tr Rise Time 4.2 10 ns td(off) Turn-Off Delay Time 24 39 ns tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 7.5 A, VGS = 10 V, RGEN = 6 Ω VDD = 75 V, ID = 7.5 A ns 4.9 10 ns 28 40 nC 16 22 nC 7.6 nC 5.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.5 A (Note 2) 0.77 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.70 1.2 IF = 7.5 A, di/dt = 100 A/μs V 75 120 ns 109 175 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 135 V, VGS = 10 V. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. www.onsemi.com 2 FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 5 V ID, DRAIN CURRENT (A) 25 VGS = 10 V VGS = 6 V 20 VGS = 5.5 V 15 10 VGS = 4.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 4.5 V 2.5 VGS = 5 V 2.0 1.5 VGS = 5.5 V 1.0 0.5 2.0 2.5 3.0 0 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 25 30 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.2 80 ID = 7.5 A rDS(on), DRAIN TO 2.0 V = 10 V GS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID = 7.5 A 40 TJ = 125 oC 20 TJ = 25 oC 0 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 30 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 15 TJ = 25 oC 10 5 TJ = -55 oC 0 3 4 10 100 20 2 8 Figure 4. On-Resistance vs. Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 25 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 5 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 6 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 150 oC 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 10000 ID = 7.5 A 8 VDD = 100 V VDD = 50 V 6 VDD = 75 V 4 10 0 5 10 15 20 25 Coss 100 2 0 Ciss 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 f = 1 MHz VGS = 0 V 1 0.1 30 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs. Drain to Source Voltage 8 30 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 6 VGS = 6 V 4 2 o RθJA = 50 C/W 1 0.01 0.1 1 10 0 25 100 50 150 100000 P(PK), PEAK TRANSIENT POWER (W) 10 μs 10 100 μs 1 1 ms 10 ms 100 ms 1s THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 C 0.1 10 s DC CURVE BENT TO ACUTAL DATA o 0.001 0.01 125 Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature 300 100 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 1 10 100 SINGLE PULSE RθJA = 125 oC/W 10000 TA = 25 oC 1000 500 100 10 1 0.1 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area www.onsemi.com 4 2 10 3 10 FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 -1 10 -2 10 PDM -3 t1 10 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W -4 10 (Note 1b) -5 10 -5 10 -4 10 -3 10 -2 -1 10 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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