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FDMC86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 16 A, 51 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
Application
RoHS Compliant
DC - DC Conversion
Top
Bottom
Pin 1
S
D
D
D
S
S
G
S
D
S
D
S
D
G
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
4.6
A
20
Single Pulse Avalanche Energy
PD
Units
V
16
-Pulsed
EAS
Ratings
150
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
34
40
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
3.1
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86240
Device
FDMC86240
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
Package
Power 33
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
June 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.0
V
150
V
101
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 4.6 A
44.7
51
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 3.9 A
51.4
70
VGS = 10 V, ID = 4.6 A, TJ = 125 °C
84.5
97
gFS
Forward Transconductance
2.0
VDS = 10 V, ID = 4.6 A
2.9
-9
mV/°C
15
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
680
905
pF
79
105
pF
4.3
10
pF
Ω
0.5
Switching Characteristics
td(on)
Turn-On Delay Time
8.2
17
ns
tr
Rise Time
1.7
10
ns
td(off)
Turn-Off Delay Time
14
26
ns
tf
Fall Time
3.1
10
ns
11
15
nC
6
9
VDD = 75 V, ID = 4.6 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
Qg(TOT)
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 75 V,
ID = 4.6 A
nC
2.8
nC
2.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4.6 A
(Note 2)
0.79
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.75
1.2
IF = 4.6 A, di/dt = 100 A/μs
V
58
93
ns
63
102
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
125 °C/W when mounted on
a minimum pad of 2 oz copper
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 4.8 A, VDD = 150 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
2
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
VGS = 10 V
VGS = 6 V
VGS = 5.5 V
15
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
20
VGS = 5 V
10
VGS = 4.5 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
VGS = 4.5 V
2.5
VGS = 5 V
2.0
VGS = 5.5 V
1.5
1.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
0
5
10
15
20
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
200
ID = 4.6 A
VGS = 10 V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
2.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0.5
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
ID = 4.6 A
100
TJ = 125 oC
50
TJ = 25 oC
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
15
VDS = 5 V
10
TJ = 150 oC
25 oC
5
TJ =
-55 oC
0
3
4
5
6
7
8
9
20
10 VGS = 0 V
1
TJ = 150 oC
0.1
0.01
0.001
0.0
6
TJ = 25 oC
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
10
Figure 4. On-Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
TJ =
5
VGS, GATE TO SOURCE VOLTAGE (V)
20
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
0
-50
Figure 3. Normalized On- Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 6 V
3
1.2
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
1000
ID = 4.6 A
8
Ciss
VDD = 50 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 100 V
6
VDD = 75 V
4
100
Coss
10
2
f = 1 MHz
VGS = 0 V
0
0
2
4
6
8
10
Crss
1
0.1
12
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
6
20
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
5
4
TJ = 25 oC
3
TJ = 100 oC
2
TJ = 125 oC
15
10
VGS = 6 V
5
o
RθJC = 3.1 C/W
1
0.1
1
0
25
10
50
10
P(PK), PEAK TRANSIENT POWER (W)
2000
1000
100 us
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
DC
TA = 25 oC
1
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
150
SINGLE PULSE
VGS = 10 V
o
RθJA = 125 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
125
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
30
0.01
0.005
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
ID, DRAIN CURRENT (A)
VGS = 10 V
Limited by Package
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.001
0.0005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
5
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C4
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
FDMC86240 Rev.C4
7
www.fairchildsemi.com
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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™
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Marking Small Speakers Sound Louder
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Saving our world, 1mW/W/kW at a time™
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