FDMC86160

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant Applications „ Bridge Topologies „ Synchronous Rectifier Pin 1 Pin 1 S D D D Top S S S D S D S D G D G D Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TC = 25 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 100 Units V ±20 V 43 (Note 1a) 9 (Note 4) 50 (Note 3) 181 54 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 2.3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86160 Device FDMC86160 ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C4 Package Power33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET September 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 73 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 9 A 11.2 14 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 7 A 16 23 VGS = 10 V, ID = 9 A, TJ = 125 °C 21 26 VDD = 10 V, ID = 9 A 43 VDS = 50 V, VGS = 0 V, f = 1 MHz 968 1290 pF 241 320 pF gFS Forward Transconductance 2 2.9 -9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 0.1 11 20 pF 0.6 2.5 Ω 9.7 19 ns 3.6 10 ns 16 30 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 6 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 9 A, VGS = 10 V, RGEN = 6 Ω VDD = 50 V, ID = 9 A 3.4 10 ns 15 22 nC 9.8 15 nC 4.4 nC 3.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9 A (Note 2) 0.79 1.3 V VGS = 0 V, IS = 1.9 A (Note 2) 0.72 1.2 V IF = 9 A, di/dt = 100 A/μs 47 75 ns 45 73 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 181 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 11 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 35 A. 4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area. ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C4 2 www.fairchildsemi.com FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 7 V 40 VGS = 6 V VGS = 5.5 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 VGS = 5 V 10 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 9 A VGS = 10 V 0.4 -75 40 50 ID = 9 A 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 30 TJ = 125 oC 20 TJ = 25 oC 10 0 -50 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 VDS = 5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 0 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 2.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 3 4 5 oC 6 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C4 3 1.2 www.fairchildsemi.com FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 ID = 9 A VDD = 50 V Ciss VDD = 25 V CAPACITANCE (pF) 8 VDD = 75 V 6 4 1000 Coss 100 10 2 0 0 4 8 12 1 0.1 16 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 100 ID, DRAIN CURRENT (A) 50 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 40 VGS = 10 V 30 VGS = 6 V 20 10 o RθJC = 2.3 C/W 1 0.001 0.01 0.1 1 10 0 25 100 tAV, TIME IN AVALANCHE (ms) 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 300 100 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V 10 μs 10 1 THIS AREA IS LIMITED BY rDS(on) 100 μs SINGLE PULSE TJ = MAX RATED 1 ms RθJC = 2.3 oC/W 10 ms DC TC = 25 oC 0.1 0.1 1 10 100 500 100 SINGLE PULSE RθJC = 2.3 oC/W TC = 25 oC 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C4 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJC(t) = r(t) x RθJC 0.01 SINGLE PULSE 0.001 -5 10 RθJC = 2.3 °C/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMC86160 Rev. C4 5 www.fairchildsemi.com FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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