FDMC86160ET100

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC86160ET100 N 沟道屏蔽栅极 Power Trench® MOSFET 100 V， 43 A， 14 mΩ 特性 概述  TJ 额定值扩展：175°C 此 N 沟 道 MOSFET 采 用 Fairchild 带 屏蔽 栅 极技 术 的先 进 PowerTrench® 工艺生产。该工艺针对导通电阻进行了优化。此 器件非常适合需要在小空间内实现超低 RDS （on）的应用，例如 高 性能 VRM、 POL 和 Orring 功能。  屏蔽栅极 MOSFET 技术  最大 rDS(on) = 14 mΩ （VGS = 10 V， ID = 9 A）  最大 rDS(on) = 23 mΩ （VGS = 6 V， ID = 7 A） 应用  高性能沟道技术可实现极低的 rDS(on)  桥式拓扑  终端无引线且符合 RoHS 标准  同步整流器 引脚 1 引脚 1 D D 顶 D S S S S D S D S D G D G D 底 Power 33 MOSFET 最大额定值 TA = 25 °C 除非另有说明 符号 参数 VDS 漏极－源极电压 VGS 栅极－源极电压 - 连续 漏极电流 ID TC = 25 °C - 连续 TC = 100 °C - 连续 TA = 25 °C - 脉冲 EAS 单脉冲雪崩能量 PD TJ, TSTG 功耗 TC = 25 °C 功耗 TA = 25 °C 额定值 100 单位 V ±20 V （注 5） 43 （注 5） 31 （注 1a） 9 （注 4） 204 （注 3） 181 65 2.8 （注 1a） -55 至 +175 工作和存储结温范围 A mJ W °C 热性能 RθJC 结至外壳热阻 （注 1） 2.3 RθJA 结至环境热阻 （注 1a） 53 °C/W 封装标识与定购信息 器件标识 FDMC86160ET © 2015 飞兆半导体公司 FDMC86260ET150 修订版 C1 器件 FDMC86160ET100 封装 Power33 1 卷尺寸 13 ’’ 带宽 12 mm 数量 3000 个 www.fairchildsemi.com FDMC86260ET150 N 沟道 Power Trench® MOSFET 2015 年 3 月 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVDSS 漏极－源极击穿电压 ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ 击穿电压温度系数 ID = 250 μA, 参考温度为 25 °C IDSS 零栅极电压漏极电流 VDS = 80 V, VGS = 0 V 1 μA IGSS 栅极－源极漏电流 VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) 栅极－源极阈值电压 VGS = VDS, ID = 250 μA 4 V ΔVGS(th) ΔTJ 栅极－源极阈值电压温度系数 ID = 250 μA, 参考温度为 25 °C VGS = 10 V, ID = 9 A 11.2 rDS(on) 漏极至源极静态导通电阻 VGS = 6 V, ID = 7 A 16 23 VGS = 10 V, ID = 9 A, TJ = 125 °C 21 26 VDD = 10 V, ID = 9 A 43 VDS = 50 V, VGS = 0 V, f = 1 MHz 968 1290 pF 241 320 pF 11 20 pF 0.6 2.5 Ω 100 V 73 mV/°C 导通特性 gFS 正向跨导 2 2.9 -9 mV/°C 14 mΩ S 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Rg 栅极阻抗 0.1 开关特性 td(on) 导通延迟时间 tr 上升时间 td(off) 关断延迟时间 tf 下降时间 Qg(TOT) 总栅极电荷 VGS = 0 V 至 10 V Qg(TOT) 总栅极电荷 VGS = 0 V 至 6 V Qgs 总栅极电荷 Qgd 栅极－漏极 “ 米勒 ” 电荷 VDD = 50 V, ID = 9 A, VGS = 10 V, RGEN = 6 Ω VDD = 50 V, ID = 9 A 9.7 19 ns 3.6 10 ns ns 16 30 3.4 10 ns 15 22 nC 9.8 15 nC 4.4 nC 3.5 nC 漏极－源极二极管特性 VSD 源极－漏极二极管正向电压 trr 反向恢复时间 Qrr 反向恢复电荷 VGS = 0 V， IS = 9 A （注 2） 0.79 1.3 V VGS = 0 V，IS = 1.9 A （注 2） 0.72 1.2 V IF = 9 A, di/dt = 100 A/μs 47 75 ns 45 73 nC 注意： 1. RθJA 取决于安装在一平方英寸衬垫， 2 oz 铜焊盘以及 FR-4 材质尺寸 1.5 x 1.5in. 的衬垫上的器件。 RθCA 由用户的电路板设计确定。 53 安装在 2 oz 最小 1 in2 铜 a. 焊盘上时的 °C/W 125 安装在 2 oz 最小铜焊盘上 b.时的 °C/W SS SF DS DF G SS SF DS DF G 2. 脉冲测试：脉冲宽度：