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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDS8638
N-Channel PowerTrench® MOSFET
40 V, 18 A, 4.3 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
Applications
RoHS Compliant
Synchronous Rectifier
Load Switch
D
D
D
D
G
D
5
4
D
6
3 S
D
7
2 S
D
8
1 S
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Ratings
40
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous
18
ID
Parameter
-Pulsed
100
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
541
Power Dissipation
TA = 25 °C
(Note 1a)
2.5
Power Dissipation
TA = 25 °C
(Note 1b)
1
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS8638
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
Device
FDS8638
Package
SO-8
1
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
March 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
40
V
32
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 18 A
3.3
4.3
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 16 A
4.0
5.4
VGS = 10 V, ID = 18 A, TJ = 125 °C
4.8
6.3
VDS = 5 V, ID = 18 A
88
gFS
Forward Transconductance
1.0
1.9
-7
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4270
5680
pF
1175
1560
pF
120
180
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = 20 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V,
ID = 18 A
16
30
ns
6
13
ns
39
63
ns
5
10
ns
61
86
nC
27
39
nC
12
nC
7.2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18 A
(Note 2)
0.81
1.3
VGS = 0 V, IS = 2.1 A
(Note 2)
0.71
1.2
IF = 18 A, di/dt = 100 A/µs
V
51
82
ns
30
49
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
2
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
VGS = 10 V
VGS = 3.5 V
ID, DRAIN CURRENT (A)
80
VGS = 4.5 V
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 4 V
40
20
VGS = 3 V
0
0.0
0.5
1.0
1.5
VGS = 3 V
3.0
VGS = 3.5 V
2.5
2.0
VGS = 4 V
1.5
1.0
2.0
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
20
ID = 18 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
VGS = 4.5 V
0.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 18 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
3.5
VDS = 5 V
60
TJ = 150 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
4.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
3
1.2
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
Ciss
ID = 18 A
8
VDD = 20 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 15 V
VDD = 25 V
4
1000
Coss
Crss
f = 1 MHz
VGS = 0 V
2
100
0
0
10
20
30
40
50
60
50
0.1
70
Figure 7. Gate Charge Characteristics
40
20
ID, DRAIN CURRENT (A)
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
15
VGS = 10 V
10
VGS = 4.5 V
5
o
RθJA = 50 C/W
1
0.01
0.1
1
10
100
0
25
1000
50
100
125
150
o
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
200
100
P(PK), PEAK TRANSIENT POWER (W)
1000
1 ms
10
10 ms
1
75
TA, AMBIENT TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
30
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
DC
TC = 25 oC
0.01
0.01
0.1
1
10
100 200
SINGLE PULSE
RθJA = 125 oC/W
TC = 25 oC
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
VGS = 10 V
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
(Note 1b)
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
5
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I39
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
6
www.fairchildsemi.com
FDS8638 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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