FDS89141

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 mΩ Features General Description „ Shielded Gate MOSFET Technology This „ Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Semiconductor‘s N-Channel MOSFET is advanced PowerTrench® produced using Fairchild process that incorporates Shielded Gate technology. This process has been „ Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A optimized for rDS(on), switching performance and ruggedness. „ High performance trench technology for extremely low rDS(on) Applications „ High power and current handling capability in a widely used surface mount package „ Synchronous Rectifier „ 100% UIL Tested „ Primary Switch For Bridge Topology „ RoHS Compliant D2 D2 D1 D1 G2 S2 G1 S1 Pin 1 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 3.5 ID Parameter -Pulsed 18 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 37 Power Dissipation TA = 25 °C (Note 1a) 31 Power Dissipation TA = 25 °C (Note 1b) 1.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS89141 Device FDS89141 ©2010 Fairchild Semiconductor Corporation FDS89141 Rev.1.2 Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 3.5 A 47 62 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.8 A 63 100 VGS = 10 V, ID = 3.5 A, TJ = 125 °C 81 107 gFS Forward Transconductance 2 3.1 -9 VDS = 10 V, ID = 3.5 A mV/°C 14.7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 299 398 pF 70 93 pF 4.7 7 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 3.5 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3.5 A 5 10 1.4 10 ns ns 9.8 20 ns 2.2 10 ns 5.1 7.1 nC 2.9 4.1 nC 1.4 nC 1.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.5 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 33 53 ns 23 37 nC IF = 3.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper b) 135°C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10V. ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. 1.2 2 www.fairchildsemi.com FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 5.0 VGS = 10 V VGS = 7 V 15 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 18 VGS = 6 V 12 VGS = 5.5 V 9 6 VGS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4.5 4.0 VGS = 5 V 3.5 VGS = 5.5 V 3.0 VGS = 6 V 2.5 2.0 VGS = 7 V 1.5 1.0 0.5 VGS = 10 V 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 18 400 ID = 3.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 ID = 3.5 A 200 TJ = 125 oC 100 TJ = 25 oC 0 100 125 150 4 5 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 12 9 = 150 oC 6 TJ = 25 oC 3 TJ = 3 4 5 -55 oC 6 7 9 10 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 8 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. 1.2 8 20 15 2 7 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature 18 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 300 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 9 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted 400 VDD = 25 V ID = 3.5 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 0 1 2 3 4 5 1 0.1 6 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 4 3 ID, DRAIN CURRENT (A) 4 IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V TJ = 25 oC TJ = 100 oC 2 TJ = 125 oC VGS = 10 V 3 2 Package Limited VGS = 6 V 1 o RθJA = 78 C/W 1 0.01 0.1 1 0 25 4 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 600 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 1 ms 1 0.1 75 TA, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s 0.01 TA = 25 oC 0.005 0.1 DC 1 10 100 400 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 2 10 10 3 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. 1.2 SINGLE PULSE RθJA = 135 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. 1.2 5 www.fairchildsemi.com FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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