FDS8934A

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. SuperSOTTM-6 SOT-23 SuperSOTTM-8 D2 D1 D2 D1 SO-8 S FD 4A 3 89 pin 1 S1 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous G1 S2 G2 (Note 1a) High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SO-8 SOT-223 SOIC-16 5 4 6 3 7 2 8 1 FDS8934A Units -20 V -8 V -4 A -20 Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ,TSTG High density cell design for extremely low RDS(ON). TA = 25oC unless otherwise noted - Pulsed PD -4 A , -20 V, RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.072 Ω @ VGS = -2.5 V. 2 (Note 1a) (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range W 1.6 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1998 Fairchild Semiconductor Corporation FDS8934A Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 µA -20 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward IGSSR Gate - Body Leakage, Reverse ON CHARACTERISTICS VGS(th) o V mV/oC -23 -1 µA VGS = 8 V, VDS = 0 V -100 nA VGS = -8 V, VDS= 0 V -100 nA -1 V (Note 2) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, I D = -4 A o -0.6 mV/oC 4 TJ =125°C VGS = -2.5 V, I D = -3.4 A 0.043 0.055 0.062 0.077 0.059 0.072 -20 Ω ID(ON) On-State Drain Current VGS = -10 V, VDS = -5 V A gFS Forward Transconductance VDS = -10 V, I D = -4 A 13 S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1130 pF 480 pF 120 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS = -10 V, I D = -1 A 8 16 ns tr Turn - On Rise Time VGS = -4.5 V , RGEN = 6 Ω 23 37 tD(off) Turn - Off Delay Time 260 360 tf Turn - Off Fall Time 90 125 Qg Total Gate Charge VDS = -5 V, I D = -4 A, 20 28 nC Qgs Gate-Source Charge VGS = -5 V 2.8 Qgd Gate-Drain Charge -1.3 A -1.2 V 3.2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S -1.3 A (Note 2) -0.7 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS8934A Rev.B Typical Electrical Characteristics -3.0V -2.5V 15 R DS(on) , NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) VGS = -4.5V -2.0V 10 -1.5V 5 0 DRAIN-SOURCE ON-RESISTANCE 3 20 2.5 V GS = -1.5V 2 -2.0V 1.5 -3.0V 1 2 3 4 -4.5V 1 0.5 0 -2.5V 5 0 4 8 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.2 I D = -4.0A R DS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 1. On-Region Characteristics. V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0.15 0.1 TA = 125°C 0.05 25°C 150 0 1 2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with 10 10 - IS , REVERSE DRAIN CURRENT (A) TJ = -55°C VDS = -5V 25°C 8 125°C 6 4 2 0 0.4 I D = -2A 0 -25 Figure 3. On-Resistance Variation Temperature. - I D , DRAIN CURRENT (A) 12 - I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 1.2 1.6 -VGS , GATE TO SOURCE VOLTAGE (V) 2 VGS = 0V 3 1 TJ =125°C 25°C -55°C 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8934A Rev.B Typical Electrical Characteristics (continued) 3000 ID =-4.0A 2000 VDS = -5V 4 -10V CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 Coss 500 200 1 Crss 100 0 0 4 8 12 16 20 f = 1 MHz V GS = 0 V 50 0.1 Q g , GATE CHARGE (nC) 0.2 0.5 1 2 5 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 50 100 IT LIM N) (O S RD 10 5 1m s 10m s 1 1s V GS = -4.5V SINGLE PULSE RθJA = 135°C/W TAA = 25°C 0.03 0.01 0.1 0.2 0.5 SINGLE PULSE RθJA =135°C/W TA = 25°C 40 10 0m s 10s DC 0.3 0.1 us POWER (W) 20 30 20 10 0 0.001 1 2 5 10 20 30 0.01 50 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE - ID , DRAIN CURRENT (A) Ciss 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 R θJA (t) = r(t) * R θJA R θJA = 135°C/W 0.1 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8934A Rev.B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.