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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDZ193P
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
-20V, -1A, 90m:
Features
General Description
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low rDS(on).
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
Application
RoHS Compliant
Battery management
Max rDS(on) = 90m: at VGS = -4.5V, ID = -1A
Max rDS(on) = 130m: at VGS = -2.5V, ID = -1A
Max rDS(on) = 300m: at VGS = -1.7V, ID = -1A
Load switch
Battery protection
PIN 1
PIN 1
S
S
G
S
S
D
G
D
BOTTOM
D
TOP
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
ID
Drain Current
-Continuous
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±12
V
-3
-15
Power Dissipation
(Note 1a)
1.9
Power Dissipation
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
65
RTJA
Thermal Resistance, Junction to Ambient
(Note 1b)
133
°C/W
Package Marking and Ordering Information
Device Marking
2
©2009 Fairchild Semiconductor Corporation
FDZ193P Rev.C4 (W)
Device
FDZ193P
Package
WL-CSP
1
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
www.fairchildsemi.com
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
December 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
-20
V
ID = -250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
-1
PA
IGSS
Gate to Source Leakage Current
VGS = ±12V, VGS = 0V
±100
nA
-1.5
V
mV/°C
-11
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250PA, referenced to 25°C
-0.6
-0.9
3
mV/°C
VGS = -4.5V, ID = -1A
66
90
VGS = -2.5V, ID = -1A
92
130
VGS = -1.7V, ID = -1A
195
300
84
123
m:
rDS(on)
Drain to Source On Resistance
ID(on)
On to State Drain Current
VGS = -4.5V, VDS = -5V
gFS
Forward Transconductance
VDS = -5V, ID = -1A
5.6
VDS = -10V, VGS = 0V,
f = 1MHz
660
pF
150
pF
90
pF
f = 1MHz
9.5
:
13
23
ns
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6:
10
20
ns
28
45
ns
21
34
ns
7
10
nC
VGS = -4.5V, ID = -1A TJ = 125°C
-10
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VGS = 0V to 10V VDD = -10V
ID = -1A
1
nC
2
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -1.1A
-1.1
(Note 2)
IF = -1A, di/dt = 100A/Ps
-0.7
-1.2
A
V
19
ns
6
nC
Notes:
1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, RTJB is defined for reference. For RTJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RTJC and RTJB
are guaranteed by design while RTJA is determined by the user's board design.
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
a. 65°C/W when mounted on
a 1 in2 pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
FDZ193P Rev.C4 (W)
2
www.fairchildsemi.com
2.0
VGS = -4.5V
-ID, DRAIN CURRENT (A)
14
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
16
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
VGS = -3V
12
10
VGS = -3.5V
8
VGS = -2.5V
6
4
VGS = -2V
2
VGS = -1.7V
0
0.0
0.5
1.8
VGS = -2.5V
1.4
VGS = -3V
1.2
VGS = -3.5V
1.0
VGS = -4.5V
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
-ID, DRAIN CURRENT(A)
12
14
16
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
240
ID = -1A
VGS = -4.5V
1.3
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
1.6
Figure 1. On Region Characteristics
1.2
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. Normalized On Resistance
vs Junction Temperature
ID = -1A
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
200
160
120
TJ = 125oC
80
40
1.5
TJ = 25oC
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
5.0
Figure 4. On-Resistance vs Gate to
Source Voltage
16
IS, REVERSE DRAIN CURRENT (A)
10
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
14
-ID, DRAIN CURRENT (A)
VGS = -2V
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
12
VDD = -5V
10
8
TJ = 125oC
6
TJ = 25oC
4
2
TJ = -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
FDZ193P Rev.C4 (W)
VGS = 0V
1
TJ = 125oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
1E-4
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
2000
ID = -1A
1000
4
VDD = -5V
3
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
5
VDD = -10V
2
VDD = -15V
1
0
0
2
4
6
8
Ciss
Coss
100
f = 1MHz
VGS = 0V
50
0.1
10
Qg, GATE CHARGE(nC)
3.5
30
3.0
10
VGS = -4.5V
2.5
2.0
1.5
VGS = -2.5V
1.0
0.5
1ms
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
100ms
1s
SINGLE PULSE
TJ = MAX RATED
10s
DC
o
RTJA = 133 C/W
o
50
20
100us
RTJA = 65 C/W
0.0
25
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
Figure 7. Gate Charge Characteristics
Crss
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
TA = 25OC
75
100
125
0.01
0.1
150
1
80
10
o
TA, CASE TEMPERATURE ( C)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
50
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
10
CURRENT AS FOLLOWS:
I = I25
150 – T
A
-----------------------125
TA = 25oC
1
0.5
-3
10
SINGLE PULSE
-2
10
-1
10
0
10
t, PULSE WIDTH (s)
1
10
2
10
3
10
Figure 11. Single Pulse Maximum Power Dissipation
FDZ193P Rev.C4 (W)
4
www.fairchildsemi.com
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
0.01
-3
10
-2
10
-1
0
10
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDZ193P Rev.C4 (W)
5
2
10
3
10
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
www.fairchildsemi.com
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
Dimensional Outline and Pad Layout
Pin Definations:
Gate
Drain
Source
A1
C1, C2
A2, B1, B2
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006
FDZ193P Rev.C4 (W)
6
www.fairchildsemi.com
AccuPower
AttitudeEngine™
Awinda ®
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
®
DEUXPEED
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FAST®
FastvCore
FETBench
FPS
F-PFS
FRFET®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid ®
MTi ®
MTx®
®
MVN
mWSaver ®
OptoHiT
OPTOLOGIC®
OPTOPLANAR
®
®*
®
PowerTrench ®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT -3
SuperSOT -6
SuperSOT -8
SupreMOS®
SyncFET
Sync-Lock™
TinyBoost®
TinyBuck®
TinyCalc
®
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
μSerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
仙童™
* Trademarks of System General Corporation, us ed under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Definition
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without not ice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
FDZ193P Rev.C4 (W)
7
www.fairchildsemi.com
P-Channel 1.7V PowerTrench ® WL-CSP MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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