FFH60UP40S3

DATA SHEET www.onsemi.com Ultrafast Diode PIN ASSIGNMENTS 60 A, 400 V FFH60UP40S, FFH60UP40S3 Backside Metal Connected to Cathode 2 1 TO−247−2LD CASE 340CL Description The FFH60UP40S, FFH60UP40S3 is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. Features • • • • Ultrafast Recovery,Trr = 85 ns (@ IF = 60 A) Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) Avalanche Energy Rated These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1., 3. Anode 2. Cathode Backside Metal Connected to Cathode 1 2 3 TO−247−3LD CASE 340CK MARKING DIAGRAM Applications • • • • General Purpose SMPS, Welder, UPS Free−wheeling Diode for Motor Application Power Switching Circuits $Y&Z&3&K FFH 60UP40S $Y &Z &3 &K FFH60UP40Sx $Y&Z&3&K FFH 60UP40S3 = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 January, 2022 − Rev. 4 1 Publication Order Number: FFH60UP40S/D FFH60UP40S, FFH60UP40S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit VRRM Peak Repetitive Reverse Voltage 400 V VRWM Working Peak Reverse Voltage 400 V DC Blocking Voltage 400 V VR IF(AV) Average Rectified Forward Current @ TC = 139°C 60 A IFSM Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave 600 A −65 to +150 °C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol RqJC Parameter Maximum Thermal Resistance, Junction to Case Value Unit 0.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter VF (Note 1) IF = 60 A IR (Note 1) VR = 400 V trr IF = 60 A, diF/dt = 200 A/ms, VR = 260 V WAVL Min Typ Max Unit TC = 25°C − 1.06 1.3 V TC = 100°C − 0.99 − TC = 25°C − − 100 TC = 100°C − − 500 TC = 25°C − 59 85 TC = 100°C − 96 − 50 − − Avalanche Energy (L = 40 mH) mA ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2% ORDERING INFORMATION Part Number Device Marking Package Shipping FFH60UP40S FFH60UP40S TO−247−2LD (Pb-Free / Halogen Free) 450 Units / Tube FFH60UP40S3 FFH60UP40S3 TO−247−3LD (Pb-Free / Halogen Free) 450 Units / Tube www.onsemi.com 2 FFH60UP40S, FFH60UP40S3 TEST CIRCUIT AND WAVEFORM VGE Amplitude and RG Control dlF/dt t1 and t2 Control IF L dIF IF DUT CURRENT SENSE RG VGE t1 Trr dt ta 0 tb + 0.25I RM IRM VDD − IGBT t2 Figure 1. Diode Reverse Recovery Test Circuit and Waveform L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 3 t2 t FFH60UP40S, FFH60UP40S3 TYPICAL PERFORMANCE CHARACTERISTICS 100 100 IR, Reverse Current [mA] IF, Forward Current [A] 400 TC = 125°C TC = 25°C TC = 75°C 10 1 0.0 0.5 1.0 1.5 TC = 125°C 10 1 TC = 75°C 0.1 TC = 25°C 0.01 0.001 10 2.0 90 Figure 4. Typical Reverse Current vs. Reverse Voltage Figure 3. Typical Forward Voltage Drop vs. Forward Current 2000 150 Cj, Capacitance [pF] trr, Reverse Recovery Time [ns] Typical Capacitance at 0 V = 1660 pF 1600 1200 800 400 0 0.1 1 10 IF = 60 A TC = 125°C 120 90 TC = 75°C 60 TC = 25°C 30 100 100 200 VR, Reverse Voltage [V] IF(AV), Average Forward Current [A] Irr, Reverse Recovery Current [A] TC = 125°C TC = 75°C TC = 25°C 8 4 200 500 350 12 0 100 400 Figure 6. Typical Reverse Recovery Time vs. di/dt IF = 60 A 16 300 di/dt [A/ms] Figure 5. Typical Junction Capacitance 20 260 VR, Reverse Voltage [V] VF, Forward Voltage [V] 24 180 300 400 300 250 200 150 100 50 0 500 di/dt [A/ms] 25 50 75 100 125 150 TC, Case Temperature [°C] Figure 8. Forward Current Derating Curve Figure 7. Typical Reverse Recovery Current vs. di/dt www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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