FFSP15120A

Silicon Carbide Schottky Diode 1200 V, 15 A FFSP15120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 145 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications 1 2 TO−220−2LD CASE 340BB MARKING DIAGRAM • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSP 15120A $Y &Z &3 &K FFSP15120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January, 2020 − Rev. 2 1 Publication Order Number: FFSP15120A/D FFSP15120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 145 mJ Continuous Rectified Forward Current @ TC < 148°C 15 A Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 920 A TC = 150°C, 10 ms 870 A Symbol VRRM EAS IF IF,Max IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 115 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 50 A PTOT Power Dissipation TC = 25°C 300 W TC = 150°C 50 W −55 to +175 °C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 145 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 150 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 15 A, TC = 25°C − 1.45 1.75 V IF = 15 A, TC = 125°C − 1.7 2.0 IF = 15 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 95 − nC Total Capacitance VR = 1 V, f = 100 kHz − 936 − pF VR = 400 V, f = 100 kHz − 86 − VR = 800 V, f = 100 kHz − 68 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSP15120A FFSP15120A TO−220−2LD Tube 50 Units www.onsemi.com 2 FFSP15120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 101 20 IR, Reverse Current (mA) IF, Forward Current (A) TJ = −55°C TJ = 25°C 15 TJ = 75°C 10 TJ = 125°C TJ = 175°C 5 0 2 1 VF, Forward Voltage (V) 0 TJ = 175°C 100 TJ = 125°C 10−1 TJ = 75°C 10−2 3 Figure 1. Forward Characteristics 0.8 0.6 IF, Peak Forward Current (A) IR, Reverse Current (mA) 400 600 800 1000 VR, Reverse Voltage (V) 1200 250 TJ = −55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 0.4 0.2 0.0 1200 1300 1400 D = 0.1 200 D = 0.2 150 D = 0.3 100 D = 0.5 50 0 1500 D = 0.7 25 VR, Reverse Voltage (V) D=1 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Current Derating Figure 3. Reverse Characteristics 120 QC, Capacitive Charge (nC) 200 PTOT, Power Dissipation (W) TJ = −55°C Figure 2. Reverse Characteristics 1.0 150 100 50 0 TJ = 25°C 10−3 200 25 50 75 100 125 150 100 80 60 40 20 0 0 175 200 400 600 800 1000 VR, Reverse Voltage (V) TC, Case Temperature (5C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSP15120A TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) 40 EC, Capacitive Energy (mJ) Capacitance (pF) 5000 1000 100 10 0.1 1 10 100 30 20 10 0 1000 0 400 200 VR, Reverse Voltage (V) 600 800 1000 VR, Reverse Voltage (V) Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy ZqJC, Normalized Thermal Impedance 2 1 D=0.5 0.2 PDM 0.1 0.05 0.02 0.01 0.1 t1 t2 NOTES: ZqJC(t) = r(t) × RqJC RqJC = 0.5°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.05 10−4 10−3 10−2 10−1 1 t, Rectangular Pulse Duration (s) Figure 9. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative