FGA60N60UFDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA60N60UFD 600 V, 60 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C G TO-3P G C E E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD Ratings Unit Collector to Emitter Voltage Description 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 V Collector Current @ TC = 25oC 120 A Collector Current @ TC = 100oC 60 A 25oC 180 A o W Pulsed Collector Current @ TC = Maximum Power Dissipation @ TC = 25 C 298 Maximum Power Dissipation @ TC = 100oC 119 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C C oC 300 Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.33 Unit o C/W C/W C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.1 o RJA Thermal Resistance, Junction to Ambient - 40 o ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 1 www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT March 2015 Part Number Top Mark FGA60N60UFDTU FGA60N60UFD Package Packing Method TO-3P Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 A - 0.67 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA 4.0 5.0 6.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V - 1.9 2.4 V IC = 60 A, VGE = 15 V, TC = 125oC - 2.1 - V - 2855 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 325 - pF - 110 - pF Switching Characteristics td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 58 - ns td(off) Turn-Off Delay Time - 130 - ns tf Fall Time - 40 80 ns Eon Turn-On Switching Loss - 1.81 - mJ Eoff Turn-Off Switching Loss - 0.81 - mJ VCC = 400 V, IC = 60 A, RG = 5 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 2.62 - mJ td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 61 - ns td(off) Turn-Off Delay Time - 141 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 3.15 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 VCC = 400 V, IC = 60 A, RG = 5 , VGE = 15 V, Inductive Load, TC = 125oC VCE = 400 V, IC = 60 A, VGE = 15 V 2 - 63 - ns - 1.92 - mJ - 188 - nC - 21 - nC - 97 - nC www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 30 A IF = 30 A, diF/dt = 200 A/s Qrr Diode Reverse Recovery Charge ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 Min. Typ. Max TC = 25oC - 2.0 2.6 TC = 125oC - 1.8 - TC = 25oC - 47 - - 179 - TC = 25oC - 83 - o - 567 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 180 180 o o TC = 125 C TC = 25 C 20V 150 15V 150 120 Collector Current, IC [A] Collector Current, IC [A] 12V 10V 90 60 VGE = 8V 30 12V 90 60 VGE = 8V 30 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 25 C o TC = 125 C 120 Common Emitter VCE = 20V 150 Collector Current, IC [A] Collector Current, IC [A] 10V 120 0 90 60 o TC = 25 C o TC = 125 C 120 90 60 30 30 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 3.0 120A 2.5 2.0 60A 1.5 IC = 30A 1.0 25 5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 3.5 1 2 3 4 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 15V 20V FGA60N60UFD Rev. 1.4 16 12 8 120A 4 60A IC = 30A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2009 Fairchild Semiconductor Corporation o TC = -40 C 4 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 18 www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 20 Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 16 12 8 60A 120A 4 IC = 30A 0 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] Figure 9. Capacitance Characteristics o TC = 125 C 16 12 8 120A 4 60A IC = 30A 0 18 0 18 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 6 9 12 15 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 6000 Cies 4000 Coes 2000 Cres 0 1 TC = 25 C 12 300V VCC = 100V 200V 9 6 3 0 10 Collector-Emitter Voltage, VCE [V] Figure 11. SOA Characteristics 0 30  50 100 150 Gate Charge, Qg [nC] 200  Figure 12. Turn off Switching SOA Characteristics 300 500 10s 100 100 100s 10 Collector Current, IC [A] Collector Current, Ic [A] 3 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 1 1000 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs.  Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] o 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) TC = 25 C 1000 o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [] 10 50 0 10 20 30 40 50 Gate Resistance, RG [] Figure 15. Turn-on Characteristics vs Figure 16.Turn-off Characteristics vs. Collector Current  Collector Current 500 1000 Common Emitter VGE = 15V, RG = 5 Common Emitter VGE = 15V, RG = 5 o o TC = 25 C TC = 25 C o tr TC = 125 C Switching Time [ns] Switching Time [ns] o 100 TC = 125 C td(off) 100 td(on) tf 10 30 0 20 40 60 80 100 120 0 20 40 Collector Current, IC [A] 60 80 100 120 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate ResistanceFigure 18.Switching Loss vs. Collector Current 20 20 Common Emitter VCC = 400V, VGE = 15V 10 o IC = 60A TC = 25 C o o Switching Loss [mJ] TC = 25 C Switching Loss [mJ] Common Emitter VGE = 15V, RG = 5 10 o TC = 125 C Eon 1 Eon TC = 125 C Eoff 1 Eoff 0.1 0 10 20 30 40 Gate Resistance, RG [] ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 0 50 20 40 60 80 100 120 Collector Current, IC [A] 6 www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Current , IR [A] Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C 10 o TJ = 75 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 125 C 0.01 1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 120 Stored Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 100 200A/s 80 60 diF/dt = 100A/s 40 Tc = 25℃ 200A/s 50 di/dt = 100A/s 40 Tc = 25℃ 30 20 5 20 40 5 60 20 40 60 Forward Current, IF [A] Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. 1.4 7 www.fairchildsemi.com FGA60N60UFD — 600 V, 60 A Field Stop IGBT Typical Performance Characteristics 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com