FGH60N60UFDTU

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 600V, 60A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automo-tive Chargers, Inverter, and other applications where low con-duction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant • Qualified to Automotive Requirements of AEC-Q101 Applications • Automotive chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES Description Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 Collector Current IC @ TC = 25oC Collector Current o ICM (1) Pulsed Collector Current @ TC = 100 C Maximum Power Dissipation PD Maximum Power Dissipation TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds V 120 A 60 A @ TC = 25 C 180 A 25oC 298 W o @ TC = o @ TC = 100 C 119 W -55 to +150 o -55 to +150 oC o 300 C C Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Unit o RθJC(IGBT) Thermal Resistance, Junction to Case 0.33 RθJC(Diode) Thermal Resistance, Junction to Case 1.1 oC/W RθJA Thermal Resistance, Junction to Ambient 40 o ©2015 Semiconductor Components Industries, LLC. August-2017,Rev.2 C/W C/W Publication Order Number: FGH60N60UFDTU-F085/D FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT FGH60N60UFDTU-F085 Part Number Top Mark FGH60N60UFDTU-F085 FGH60N60UFD Package Packing Method Reel Size Tape Width Quantity TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.67 ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.0 6.5 V IC = 60 A, VGE = 15 V - 1.8 2.9 V IC = 60 A, VGE = 15 V, TC = 125oC - 2.1 - V - 2540 - pF - 330 - pF - 110 - pF 29 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 60 - ns td(off) Turn-Off Delay Time - 138 - ns tf Fall Time - 28 80 ns Eon Turn-On Switching Loss - 2.47 - mJ Eoff Turn-Off Switching Loss - 0.81 - mJ Ets Total Switching Loss - 3.28 - mJ VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 28 - ns tr Rise Time - 55 - ns td(off) Turn-Off Delay Time - 147 - ns tf Fall Time - 71 - ns Eon Turn-On Switching Loss - 3.01 - mJ Eoff Turn-Off Switching Loss - 1.21 - mJ VCC = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V, Inductive Load, TC = 125oC Ets Total Switching Loss - 4.22 - mJ Qg Total Gate Charge - 192 - nC Qge Gate to Emitter Charge - 24 - nC Qgc Gate to Collector Charge - 102 - nC VCE = 400 V, IC = 60 A, VGE = 15 V www.onsemi.com 2 FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.70 2.6 125oC - 1.54 - TC = 25oC - 76 - o TC = 125 C - 242 - TC = 25oC - 208 - - 1162 - TC = 25 C IF = 30 A TC = IF = 30 A, diF/dt = 200 A/μs TC = www.onsemi.com 3 125oC Units V ns nC FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics o TC = 25 C 15V Collector Current, IC [A] 150 180 20V 12V 120 10V 90 60 30 0 2 4 6 Collector-Emitter Voltage, VCE [V] 60 VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 Common Emitter VCE = 20V Common Emitter VGE = 15V 150 o Collector Current, IC [A] Collector Current, IC [A] 90 8 180 TC = 25 C o TC = 125 C 120 90 60 150 T = 25oC C o TC = 125 C 120 90 60 30 30 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 120A 60A IC = 30A 1 25 2 12 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 4 Collector-Emitter Voltage, VCE [V] 10V 30 Figure 3. Typical Saturation Voltage Characteristics 0 15V 12V 120 VGE = 8V 0 20V o TC = 125 C 150 Collector Current, IC [A] 180 Figure 2. Typical Output Characteristics Common Emitter o TC = -40 C 16 120A 12 www.onsemi.com 4 IC = 30A 4 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 60A 8 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 18 FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 120A 12 60A 8 IC = 30A 4 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 16 120A 12 60A 8 IC = 30A 4 0 3 Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] TC = 25 C Cies Coes 2000 Cres 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C VCC = 100V 12 200V 300V 9 6 3 0 30 Figure 11. SOA Characteristics Characteristics 0 50 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA 500 300 10μs 100 Collector Current, IC [A] 100 100μs 10 1ms 10 ms DC 1 *Notes: Single Nonrepetitive O Pulse TC= 25 C 0.1 10 Safe Operating Area Curves must be derated linearly with increase in temperature 0.01 18 o o 4000 6 9 12 15 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 15 6000 Capacitance [pF] TC = 125 C 18 Figure 9. Capacitance Characteristics Collector Current, Ic [A] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 1 10 100 Collector-Emitter Voltage, VCE [V] o VGE = 15V, TC = 125 C 1 1000 www.onsemi.com 5 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A 100 Switching Time [ns] Switching Time [ns] o tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) TC = 25 C 1000 o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 10 50 Figure 15. Turn-on Characteristics vs. Collector Current 500 0 10 20 30 Gate Resistance, RG [Ω] 600 Common Emitter VGE = 15V, RG = 5Ω Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 125 C Switching Time [ns] Switching Time [ns] o tr 100 td(on) 0 20 40 60 80 td(off) o TC = 125 C 100 tf 100 10 120 0 20 40 60 80 100 120 Collector Current, IC [A] Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current 10 20 o Eon TC = 25 C o TC = 125 C Switching Loss [mJ] 1 Common Emitter VGE = 15V, RG = 5Ω 10 Eon Switching Loss [mJ] 50 Figure 16. Turn-off Characteristics vs. Collector Current TC = 25 C 10 40 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 60A Eoff 1 o TC = 25 C o TC = 125 C 0.1 0 10 20 30 40 Gate Resistance, RG [Ω] 50 0.1 www.onsemi.com 6 0 20 40 60 80 Collector Current, IC [A] 100 120 FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Currnet, IR [uA] Forward Current, IF [A] Figure 19. Forward Characteristics o TJ = 125 C o TJ = 75 C 10 o TJ = 25 C o TC = 25 C o TJ = 125 C 10 o TJ = 75 C 1 o TJ = 25 C 0.1 TC = 125 C o TC = 75 C 1 0 1 2 3 Forward Voltage, VF [V] 0.01 4 Figure 21. Stored Charge 200 400 Reverse Voltage, VR [V] 90 Reverse Recovery Time, trr [ns] 200A/μs 200 150 di/dt = 100A/μs 100 80 di/dt = 100A/μs 200A/μs 70 o o TC = 25 C 5 20 40 60 60 TC = 25 C 5 20 Forward Current, IF [A] 40 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 50 600 Figure 22. Reverse Recovery Time 250 Stored Recovery Charge, Qrr [nC] 0 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse 1E-3 -5 10 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 10 -2 10 Rectangular Pulse Duration [sec] www.onsemi.com 7 -1 10 0 10 60 FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Typical Performance Characteristics FGH60N60UFDTU-F085 — 600V, 60A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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